Anomaly of the temperature dependence and nature of the optical absorption band in the 8 μm region for β-rhombohedral boron

1978 ◽  
Vol 29 (3) ◽  
pp. 1101-1104
Author(s):  
R. G. Yarovaya ◽  
K. P. Tsomaya ◽  
D. L. Gabuniya ◽  
Nguen Van Doai
Keyword(s):  
Absorption Band ◽  
Optical Absorption ◽  
Temperature Dependence ◽  
Optical Absorption Band ◽  
Rhombohedral Boron

scholarly journals Photocatalytic NO removal over calcium-bridged siloxenes under ultraviolet and visible light irradiation

2018 ◽  
Vol 47 (20) ◽  
pp. 7070-7076 ◽  
Author(s):  
Haruo Imagawa ◽  
Xiaoyong Wu ◽  
Hiroshi Itahara ◽  
Shu Yin ◽  
Kazunobu Kojima ◽  
...  
Keyword(s):  
Photocatalytic Activity ◽  
Absorption Band ◽  
Optical Absorption ◽  
Visible Light ◽  
Visible Light Irradiation ◽  
Light Irradiation ◽  
Ultraviolet Region ◽  
No Removal ◽  
Optical Absorption Band

Ca-Bridged siloxenes with a wide optical absorption band from the visible to ultraviolet region exhibited photocatalytic activity for NO removal.

Optical absorption band edge of single crystal β-GeSe2

1985 ◽  
Vol 110 (7-8) ◽  
pp. 426-428 ◽  
Author(s):  
Zoran V. Popović ◽  
A. Breitschwerdt
Keyword(s):  
Absorption Band ◽  
Optical Absorption ◽  
Single Crystal ◽  
Band Edge ◽  
Absorption Band Edge ◽  
Optical Absorption Band

Properties of Nano-layers of Nanoclusters of Ag in SiO2 Host produced by MeV Si ion bombardment

2007 ◽  
Vol 1020 ◽  
Author(s):  
C.C. Smith ◽  
S. Budak ◽  
S. Guner ◽  
C. Muntele ◽  
R. A. Minamisawa ◽  
...  
Keyword(s):  
Thermal Properties ◽  
Absorption Band ◽  
Optical Absorption ◽  
Buffer Layer ◽  
Periodic Structure ◽  
Rutherford Backscattering Spectrometry ◽  
Bulk Material ◽  
Ion Bombardment ◽  
Optical Absorption Band ◽  
Before And After

AbstractWe prepared 50 periodic nano-layers of SiO2/AgxSiO2(1-x). The deposited multi-layer films have a periodic structure consisting of alternating layers where each layer is between 1-10 nm thick. The purpose of this research is to generate nanolayers of nanocrystals of Ag with SiO2 as host and as buffer layer using a combination of co-deposition and MeV ion bombardment taking advantage of the electronics energy deposited in the MeV ion track due to ionization in order to nucleate nanoclusters. Our previous work showed that these nanoclusters have crystallinity similar to the bulk material. Nanocrystals of Ag in silica produce an optical absorption band at about 420 nm. Due to the interaction of nanocrystals between sequential nanolayers there is widening of the absorption band. The electrical and thermal properties of the layered structures were studied before and after 5 MeV Si ions bombardment at various fluences to form nanocrystals in layers of SiO2 containing few percent of Ag. Rutherford Backscattering Spectrometry (RBS) was used to monitor the stoichiometry before and after MeV bombardments.

Properties of the 4.45 eV optical absorption band in LiF:Mg,Ti

2006 ◽  
Vol 119 (1-4) ◽  
pp. 244-247 ◽  
Author(s):  
I. Nail ◽  
L. Oster ◽  
Y. S. Horowitz ◽  
S. Biderman ◽  
Y. Belaish
Keyword(s):  
Absorption Band ◽  
Optical Absorption ◽  
Optical Absorption Band
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