Silicidation Mechanism of Co/(Refractory-Metal) Bilayer and Epitaxial Growth of CoSi2 on Si(100) Substrate
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ABSTRACTThe structures of CoSi2 formed from the bilayer of Co/(refractory metal) have been investigated. For a layer reversal and epitaxial growth of CoSi2 on Si substrate, the silicidation temperature of interposed refractory metal should be higher than that of Co and the oxidation potential of the refractory should also be negatively higher than that of Si to remove the native oxide on Si substrate. The main role of the refractory metal layer in the epitaxial growth of CoSi2 is to limit the Co diffusion to Si substrate, controlling the Co-Si reaction rate. Thus Co atoms are able to locate their stable positions with the lowest energy in CoSi2 lattice.
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1978 ◽
Vol 36
(2)
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pp. 328-329
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2020 ◽
Vol 48
(2)
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pp. 429-439
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2018 ◽
Vol 5
(1)
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pp. 93-115
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