Surface production of negative hydrogen ions by reflection of hydrogen atoms from cesium oxide surfaces

1990 ◽  
Author(s):  
M. Seidl ◽  
S. T. Melnychuk ◽  
S. W. Lee ◽  
W. E. Carr
Keyword(s):  
Oxide Surfaces ◽  
Hydrogen Ions ◽  
Hydrogen Atoms ◽  
Cesium Oxide ◽  
Surface Production

Mineral reservoirs and behaviors of hydrogen in Earth’s lower mantle

2020 ◽  
Author(s):  
Qingyang Hu ◽  
Ho-kwang Mao
Keyword(s):  
Lower Mantle ◽  
Hydrogen Ions ◽  
Geochemical Processes ◽  
Transport Mechanisms ◽  
Hydrogen Atoms ◽  
And Behaviors ◽  
Isotopic Mixing ◽  
Laser Heated ◽  
Diffusion Of Hydrogen

<p>The incorporation of H into minerals imposes profound effects on their physicochemical signatures of the solid Earth. The locations of hydrogen reservoirs are detected by seismology. However, the mineral responsible for storing large quantity of hydrogen, particularly in Earth’s lower mantle is still controversial. Combining a set of in-situ probes at high pressure-temperature and first principles simulation, we investigated the solubility and behaviors of H in silica and hydroxide up to the conditions found at the core-mantle boundary. The solubility of hydrogen keeps high in those minerals even along the mantle geotherm. Under deep lower mantle pressures, hydrogen atoms are free from the hydroxyl bonding and becomes highly diffusive. The swift diffusion of hydrogen ions induces soaring electrical conductivity when the sample is laser heated. Those exotic properties indicate novel transport mechanisms for both charge and mass at Earth’s deep lower mantle. The potential of hydrogen enriched volatile reservoirs may carry major impacts on the electrical and magnetic behaviors, as well as redox, H isotopic mixing, and other geochemical processes in the Earth’s deep interiors.</p>

Hydrogen Permeation and Its Impacts on the Electrical Performance of Stacked ZrO2/Al2O3/ZrO2 Films

2020 ◽  
Vol 20 (11) ◽  
pp. 6638-6642
Author(s):  
Pyungho Choi ◽  
Youngseung Cho ◽  
Byoungdeog Choi
Keyword(s):  
Oxygen Vacancy ◽  
Leakage Current ◽  
Hydrogen Permeation ◽  
Random Access ◽  
Electrical Performance ◽  
Hydrogen Ions ◽  
Hydrogen Atoms ◽  
Access Memory ◽  
Conduction Electrons ◽  
Dielectric Capacitance

In this study, the effects of hydrogenation on the dielectric capacitance and leakage current of ZrO2/Al2O3/ZrO2 (ZAZ) films for dynamic-random-access memory (DRAM) capacitors were examined. Hydrogen permeation into ZAZ films reduced the dielectric capacitance and increased the leakage current with continued exposure to hydrogen during the forming gas annealing process. More specifically, the hydrogen ions distributed in the grain boundaries and at the Z/A interfaces appeared to disrupt the dipole motion and diminish the dielectric constant of the film, resulting in a decreased dielectric capacitance. Furthermore, the reaction of hydrogen atoms with the pre-existing oxygen of the ZrO2 films resulted in an oxygen vacancy with two captured electrons. Conduction electrons freed via ionization of the oxygen vacancy increased the conductivity of the ZAZ films, thereby increasing the leakage current throughout the ZAZ films.

Effects of Hydrogen or Nitrogen on Growth of Oxygen-Related Defects in Germanium

1992 ◽  
Vol 262 ◽  
Author(s):  
Noboru Makihara ◽  
Kazuyoshi Ito ◽  
Kaoru Mizuno ◽  
Kotaro Ono
Keyword(s):  
Electron Irradiation ◽  
Electron Trap ◽  
Hydrogen Ions ◽  
Nitrogen Implantation ◽  
Hydrogen Atoms ◽  
Active Centers ◽  
Defect Migration ◽  
Defect Growth ◽  
Oxygen Related Defect ◽  
Related Defect

ABSTRACTOxygen-doped germanium crystals were used to demonstrate the interaction between implanted hydrogen or nitrogen atoms and the oxygen-related defects. The electron trap at Eo-0.26eV associated with the germanium A-center was found to be formed by electron irradiation. Another level at Eo-0.21eV also was observed on annealing at 120 °C. As for the sample implanted with hydrogen ions following electron irradiation, the trap concentration is four times as large as that for electron irradiation alone. It is probable that the germanium A-centers produced by electron irradiation capture hydrogen atoms and increase electrically active centers. After nitrogen implantation following electron irradiation, the Eo-0.26eV level almost annealed out at 140 °C and the trap at Eo-0.21eV wasn't observed. We propose that the reduction in the oxygen-related defect growth is due to the prevention of defect migration with nitrogen atoms.

Surface production of negative hydrogen ions

1992 ◽  
Author(s):  
M. Seidl ◽  
H. L. Cui ◽  
J. D. Isenberg ◽  
H. J. Kwon ◽  
B. S. Lee
Keyword(s):  
Hydrogen Ions ◽  
Surface Production

Surface Production Of Negative Hydrogen Ions

1989 ◽  
Author(s):  
M. Seidl ◽  
W. E. Carr ◽  
S. T. Melnychuk ◽  
A. E. Souzis ◽  
J. Isenberg ◽  
...  
Keyword(s):  
Hydrogen Ions ◽  
Surface Production

scholarly journals The electrolytic behaviour of thin films. Part I.—Hydrogen

1928 ◽  
Vol 120 (784) ◽  
pp. 59-79 ◽  
Keyword(s):  
Metal Ion ◽  
Active Material ◽  
Atomic Layer ◽  
Surface Concentration ◽  
Hydrogen Ion ◽  
Hydrogen Ions ◽  
Hydrogen Atoms ◽  
Hydrogen Electrode ◽  
Electrode Processes ◽  
A Value

Few investigations have been made on the electrolytic behaviour of very thin metallic films. Whilst the work of Oberbeck and of Pring reveals the fact that a deposited layer of metal but a few atoms thick will produce an electrode possessing all the electromotive properties of the massive metal, yet information is lacking on the alteration of the electromotive force as these layers are built up. It might be anticipated that the behaviour of the electrode during the deposition of the first few layers would lead to interesting results, giving some insight into the mechanism of electrode processes and the range of action of forces of adhesion. In view of this it was considered a matter of some interest to investigate how far it might be possible to obtain data on the electrode potential and the rate of solution of the deposited atoms during the building up of the first atomic layer. The problem of metal ion deposition from aqueous solutions is complicated by the presence of other ions, such as the hydrogen ion, which can deposit simultaneously with the metal and affect the potential. For this reason the deposition of the hydrogen ion was first studied. It is well known that, in general, in order to bring about the continuous deposition of hydrogen ions at a metallic cathode, the potential must be maintained at a value considerably more negative than that of a reversible hydrogen electrode in the same electrolyte. The view most generally accepted is that this overpotential is due to an accumulation of electromotively active material on the electrode, and it has been suggested by various workers that it may consist of metallic hydrides, hydrogen atoms or negative hydrogen ions. With the exception of a paper by Knobel, little work has been done in determining the actual quantity of hydrogen accumulated on the cathode during the establishment of overpotential. Knobel, making the assumptions that the material was atomic hydrogen, that the relation between the solution pressure of the hydrogen P and the surface concentration of atoms C H is given by the relation P = k C H m , and that the potential is related to the pressure by the Nernst expression, calculated this quantity from the rate of growth of overpotential and found that for most metals it was considerably less than an atomic layer.

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