Interface properties of organic/indium–tin oxide and organic/GeS(001) studied using photoemission spectroscopy

2000 ◽  
Vol 88 (3) ◽  
pp. 1535-1540 ◽  
Author(s):  
H. Peisert ◽  
T. Schwieger ◽  
M. Knupfer ◽  
M. S. Golden ◽  
J. Fink
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Photoemission Spectroscopy ◽  
Interface Properties

UV Photoemission Study of Interfaces Related to Organic EL Devices

1997 ◽  
Vol 488 ◽  
Author(s):  
Kiyoshi Sugiyama ◽  
Kazuhiko Seki ◽  
Eisuke Ito ◽  
Yukio Ouchi ◽  
Hisao ISHII
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Electronic Structures ◽  
Organic Molecule ◽  
Negative Charge ◽  
Photoemission Spectroscopy ◽  
Level Shift ◽  
Vacuum Level ◽  
Organic Electroluminescent ◽  
Photoemission Study

AbstractInterfacial electronic structures related to organic electroluminescent (EL) devices were studied by UV photoemission spectroscopy (UPS). The two classes of interfaces studied were: (1) interfaces in a typical multilayer device AI/AIq3TPD/ITO, where Alq3 is tris(8-hydroxyquinolino)- aluminum, TPD is N,N×-diphenyl-NN×-(3-methylphenyl)- 1, 1‘-biphenyl-4,4’-diamine, and ITO is indium tin oxide, and (2) TTN/metals and TCNQ/metals interfaces, where TTN is tetrathianaphthacene and TCNQ is tetracyanoquinodimethane. The UPS studies of the specimen formed by the successive deposition of TPD, Alq3, and Al on ITO revealed interfacial energy diagrams, with the vacuum level shift of - 0.25 eV (downward) and - 0.1 eV (downward) at the TPD / ITO and the Alq3 / TPD interfaces, respectively. The deposition of TTN and TCNQ on metals showed opposite direction of the shift of the vacuum level, with the positive and negative charge at the vacuum side. This can be explained by considering the chargetransfer between the metal and the organic molecule, with these directions being consistent with the electron donating and accepting ability of these molecules.

The effect of molybdenum trioxide inter-layer between indium tin oxide (ITO) and organic semiconductor on the energy level alignment

2009 ◽  
Vol 1212 ◽  
Author(s):  
Irfan Irfan ◽  
Huanjun Ding ◽  
Yongli Gao ◽  
Do Yang Kim ◽  
Jegadesan Subbiah ◽  
...  
Keyword(s):  
Energy Level ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Molybdenum Trioxide ◽  
Ultra Violet ◽  
Photoemission Spectroscopy ◽  
Layer By Layer ◽  
Band Bending ◽  
Energy Level Alignment ◽  
In Series

AbstractWe investigated 0 to 300 Å thick stepped molybdenum trioxide (MoO3) inter-layer between in-situ oxygen plasma treated conducting indium tin oxide (ITO) and chloro-aluminum pthalocyanine (AlPc-Cl) layer-by-layer evaporated up to 228 Å, with ultra-violet photoemission spectroscopy (UPS) and inverse photoemission spectroscopy (IPES). The MoO3 inter-layers were observed to increase the surface workfunction. The workfunction increase was observed to saturate at 20 Å of MoO3 coverage. The increased surface workfunction causes hole accumulation and band bending in the subsequently deposited AlPc-Cl. A possible explanation of reduction in series resistance by the insertion of the MoO3 insulating layer is discussed based on these observations and energy level alignment.

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