Simple model for interface stresses with application to misfit dislocation generation in epitaxial thin films

2000 ◽  
Vol 87 (3) ◽  
pp. 1227-1234 ◽  
Author(s):  
R. C. Cammarata ◽  
K. Sieradzki ◽  
F. Spaepen
Keyword(s):  
Thin Films ◽  
Simple Model ◽  
Misfit Dislocation ◽  
Epitaxial Thin Films ◽  
Dislocation Generation

Strain Relaxation in Si1-xGex Thin Films on Si (100) Substrates: Modeling and Comparisons with Experiments

2005 ◽  
Vol 875 ◽  
Author(s):  
Kedarnath Kolluri ◽  
Luis A. Zepeda-Ruiz ◽  
Cheruvu S. Murthy ◽  
Dimitrios Maroudas
Keyword(s):  
Thin Films ◽  
Mechanical Response ◽  
Epitaxial Film ◽  
Film Growth ◽  
Strain Relaxation ◽  
Mean Field ◽  
Substrate Thickness ◽  
Threading Dislocation ◽  
Epitaxial Thin Films ◽  
Dislocation Generation

AbstractStrained semiconductor thin films grown epitaxially on semiconductor substrates of different composition, such as Si1-xGex/Si, are becoming increasingly important in modern microelectronic technologies. In this paper, we report a hierarchical computational approach for analysis of dislocation formation, glide motion, multiplication, and annihilation in Si1-xGex epitaxial thin films on Si substrates. Specifically, a condition is developed for determining the critical film thickness with respect to misfit dislocation generation as a function of overall film composition, film compositional grading, and (compliant) substrate thickness. In addition, the kinetics of strain relaxation in the epitaxial film during growth or thermal annealing (including post-implantation annealing) is analyzed using a properly parameterized dislocation mean-field theoretical model, which describes plastic deformation dynamics due to threading dislocation propagation. The theoretical results for Si1-xGex epitaxial thin films grown on Si (100) substrates are compared with experimental measurements and are used to discuss film growth and thermal processing protocols toward optimizing the mechanical response of the epitaxial film.

Ion Implantation and Misfit Dislocation Formation in P/P+Silicon

1999 ◽  
Vol 594 ◽  
Author(s):  
Petra Feichtinger ◽  
Hiroaki Fukuto ◽  
Rajinder Sandhu ◽  
Benjamin Poust ◽  
Mark S. Goorsky
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Ion Implantation ◽  
Misfit Dislocation ◽  
Low Dose ◽  
Strain Relaxation ◽  
Dislocation Nucleation ◽  
Epitaxial Thin Films ◽  
Boron Doped ◽  
Temperature Rapid Thermal Annealing

AbstractWe determined that self implantation of pseudomorphically strained silicon epitaxial layers greatly attenuates strain relaxation. We employed highly boron doped 150 mm diameter silicon with a nominally un-doped, 2.5 μm thick epitaxial layer (p/p+). The compressively strained layer (mismatch ≈ 1.5 × 10−4) showed inhomogeneous relaxation after epitaxial growth, with misfits forming only near the wafer periphery. High temperature rapid thermal annealing was employed after ion implantation to study misfit dislocation nucleation and glide. Our results suggest that low dose ion implantation has a potential to reduce misfit dislocation propagation and nucleation in epitaxial thin films.

scholarly journals Misfit Dislocation Guided Topographic and Conduction Patterning in Complex Oxide Epitaxial Thin Films

2016 ◽  
Vol 3 (14) ◽  
pp. 1600106 ◽  
Author(s):  
Felip Sandiumenge ◽  
Núria Bagués ◽  
José Santiso ◽  
Markos Paradinas ◽  
Alberto Pomar ◽  
...  
Keyword(s):  
Thin Films ◽  
Misfit Dislocation ◽  
Complex Oxide ◽  
Epitaxial Thin Films

Electron beam induced effects in Cu/GeSe2amorphous films

2003 ◽  
Vol 777 ◽  
Author(s):  
J.S. Romero ◽  
A.G. Fitzgerald
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Simple Model ◽  
Copper Concentration ◽  
Negative Charge ◽  
Electron Bombardment ◽  
Continuous Operation ◽  
Electron Radiation ◽  
Crystalline Product ◽  
Intense Electron

AbstractCopper migration is observed in the SEM in amorphous GeSe2/Cu thin films when an electron beam is focused in pulsed or continuous operation on the surface of these thin films. The phenomenon can be explained using a simple model in which the population of D- centers is considered to increase upon electron irradiation. The increase in the D- center population is envisaged as due to the breaking of bonds by the electron radiation and by the constant presence of negative charge in irradiated regions. Changes in copper concentration of 20%-30% have been obtained. Additionally we have observed the local crystallization of amorphous GeSe2/Cu thin films in the TEM when the samples were subjected to intense electron bombardment. The crystalline product has been identified as Berzelianite (Cu2Se).

The role of intermediate S-polymorph towards high piezoelectricity in La-doped BiFeO3 epitaxial thin films

2021 ◽  
Vol 207 ◽  
pp. 116683
Author(s):  
Jun Young Lee ◽  
Gopinathan Anoop ◽  
Sanjith Unithrattil ◽  
WooJun Seol ◽  
Youngki Yeo ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films ◽  
La Doped

scholarly journals Precise control of Jeff=12 magnetic properties in Sr2IrO4 epitaxial thin films by variation of strain and thin film thickness

2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Film Thickness ◽  
Epitaxial Thin Films ◽  
Thin Film Thickness ◽  
Precise Control

scholarly journals Realization of epitaxial thin films of the superconductor K-doped BaFe2As2

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Dongyi Qin ◽  
Kazumasa Iida ◽  
Takafumi Hatano ◽  
Hikaru Saito ◽  
Yiming Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Epitaxial Thin Films

Rapid misfit dislocation characterization in heteroepitaxial III-V/Si thin films by electron channeling contrast imaging

2014 ◽  
Vol 104 (23) ◽  
pp. 232111 ◽  
Author(s):  
Santino D. Carnevale ◽  
Julia I. Deitz ◽  
John A. Carlin ◽  
Yoosuf N. Picard ◽  
Marc De Graef ◽  
...  
Keyword(s):  
Thin Films ◽  
Misfit Dislocation ◽  
Contrast Imaging ◽  
Electron Channeling
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