Characterization of an AlGaN/GaN two-dimensional electron gas structure

2000 ◽  
Vol 87 (1) ◽  
pp. 369-374 ◽  
Author(s):  
A. Saxler ◽  
P. Debray ◽  
R. Perrin ◽  
S. Elhamri ◽  
W. C. Mitchel ◽  
...  
Keyword(s):  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

Investigation of Traps in AlGaN/GaN Heterostructures by Ultrasonic Vibrations

2021 ◽  
Vol 66 (12) ◽  
pp. 1058
Author(s):  
V.V. Kaliuzhnyi ◽  
O.I. Liubchenko ◽  
M.D. Tymochko ◽  
Y.M. Olikh ◽  
V.P. Kladko ◽  
...  
Keyword(s):  
Carrier Density ◽  
Electron Gas ◽  
Two Dimensional ◽  
Ultrasonic Vibrations ◽  
Persistent Photoconductivity ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dx Centers ◽  
Dimensional Electron Gas

A method of dynamic deformations has been proposed as a useful informative tool in the characterization of transportation properties of a two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures. It is found that the exposing of a sample to ultrasonic vibrations results in the persistent acousto-conductivity (PAC) which was observed up to room temperatures. The PAC behaves itself like persistent photoconductivity (PPC), and the carrier density in the 2DEG channel is primarily contributed by the transfer of electrons excited from traps (like DX centers) as a result of their reconstruction under the ultrasonic loading.

An electrical characterization of a two-dimensional electron gas in GaN/AlGaN on silicon substrates

2004 ◽  
Vol 95 (12) ◽  
pp. 7982-7989 ◽  
Author(s):  
S. Elhamri ◽  
R. Berney ◽  
W. C. Mitchel ◽  
W. D. Mitchell ◽  
J. C. Roberts ◽  
...  
Keyword(s):  
Electron Gas ◽  
Electrical Characterization ◽  
Silicon Substrates ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas
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