Reactive magnetron sputtering of CNx films: Ion bombardment effects and process characterization using optical emission spectroscopy

1999 ◽  
Vol 86 (7) ◽  
pp. 3646-3654 ◽  
Author(s):  
Jaroslav Vlček ◽  
Karel Rusňák ◽  
Václav Hájek ◽  
Ludvı́k Martinů
Keyword(s):  
Magnetron Sputtering ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Ion Bombardment ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Process Characterization ◽  
Cnx Films

Influence of Dissipation Power in Copper Sputtering Plasma Measured by Optical Emission Spectroscopy

2013 ◽  
Vol 832 ◽  
pp. 243-247
Author(s):  
Kevin Low ◽  
Nayan Nafarizal ◽  
Mohd Zainizan Sahdan ◽  
Mahamad Abd Kadir ◽  
Mohd Khairul bin Ahmad ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Copper Oxide ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Reactive Magnetron Sputtering ◽  
Oxide Thin Film ◽  
Reactive Magnetron ◽  
Copper Oxide Thin Film

Copper oxide is a low cost material, easy process fabrication and sensitivity to ambient conditions. Therefore, it is a suitable p-type semiconductor oxides material to be used as a gas sensing material. In order to raise the sensitivity of the copper oxide gas sensor, study on the correspondence in between the coated thin film with coating parameters is an important part. In current study, optical emission spectroscopy is used to investigate the reactive magnetron sputtering plasma during the deposition of copper oxide thin film. The measurement point was focused at roughly 2cm above the substrate holder. The emission of copper, oxygen and argon in the reactive magnetron sputtering were observed at various plasma conditions. In general, the emission of copper, oxygen and argon increased when the discharge rf power is increased. On the other hand, oxygen line intensity was found to be excess when the oxygen flow rate is above 8sccm. The result suggests the best condition to deposit the copper oxide thin film using solid 3 copper target.

Correlation Between In Situ Optical Emission Spectroscopy in a Reactive O2 / AR RF Magnetron Sputtering Discharge and PZT Thin Film Composition

1997 ◽  
Vol 493 ◽  
Author(s):  
F. Ayguavives ◽  
P. Aubert ◽  
B. Ea-Kim ◽  
B. Agius
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Optical Emission ◽  
Rf Magnetron Sputtering ◽  
Nuclear Reaction Analysis ◽  
Nominal Composition ◽  
Film Composition

ABSTRACTLead zirconate titanate (PZT) thin films have been grown by rf magnetron sputtering on Si substrates from a metallic target of nominal composition Pb1.1(Zr0.4 Ti0.6 in a reactive argon / oxygen gas mixture. During plasma deposition, in situ Optical Emission Spectroscopy (OES) measurements show clearly a correlation between the evolution of characteristic atomic emission line intensities (Zr - 386.4 nm, Ti - 399.9 nm, Pb - 405.8 nm and O - 777.2 nm) and the thin-film composition determined by a simultaneous use of Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA).

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