X-ray induced luminescence of high-purity, amorphous silicon dioxide

1999 ◽  
Vol 86 (4) ◽  
pp. 2042-2050 ◽  
Author(s):  
A. J. Miller ◽  
R. G. Leisure ◽  
Wm. R. Austin
Keyword(s):  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
High Purity ◽  
X Ray ◽  
Amorphous Silicon Dioxide

Obtaining of High Purity Amorphous Silicon Dioxide from Rice Husk

2016 ◽  
Vol 10 (4) ◽  
pp. 499-505 ◽  
Author(s):  
Tatiana Gridneva ◽  
◽  
Alexander Kravchenko ◽  
Vadim Barsky ◽  
Natalia Gurevina ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Rice Husk ◽  
High Purity ◽  
Process Temperature ◽  
Solid Residue ◽  
Technological Factors ◽  
Amorphous Silicon Dioxide ◽  
Maximum Extraction ◽  
Temperature Time

Using maximum extraction of carbon-containing components the content of amorphous silicon dioxide was increased in the rice husk solid residue. In accordance with the hypothesis about the mechanism of extracting carbon-containing components from rice husk by liquid extractants, proper extractants were selected. The effect of main technological factors including process temperature, time and concentration of the extractants was determined.

Nanocrystalline Silicon/Amorphous Silicon Dioxide Superlattices

1997 ◽  
Vol 485 ◽  
Author(s):  
Philippe M. Fauchet ◽  
Leonid Tsybeskov ◽  
Margit Zacharias ◽  
Karl Hirschman
Keyword(s):  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Layer Thickness ◽  
Rf Sputtering ◽  
Nanocrystalline Silicon ◽  
Thin Layers ◽  
Recrystallization Temperature ◽  
X Ray ◽  
Amorphous Silicon Dioxide ◽  
Step Procedure

AbstractThin layers made of densely packed silicon nanocrystals sandwiched between amorphous silicon dioxide layers have been manufactured and characterized. An amorphous silicon/amorphous silicon dioxide superlattice is first grown by CVD or RF sputtering. The a-Si layers are recrystallized in a two-step procedure (nucleation + growth) to form layers of nearly identical nanocrystals whose diameter is given by the initial a-Si layer thickness. The recrystallization is monitored using a variety of techniques, including TEM, X-Ray, Raman, and luminescence spectroscopies. When the a-Si layer thickness decreases (from 25 nm to 2.5 nm) or the a-SiO2 layer thickness increases (from 1.5 nm to 6 nm), the recrystallization temperature increases dramatically compared to that of a single a-Si film. The removal of the a-Si tissue present between the nanocrystals, the passivation of the nanocrystals, and their doping are discussed.

scholarly journals Сравнительный фотолюминесцентный анализ точечных дефектов в SiO-=SUB=-2-=/SUB=-, индуцированных имплантацией ионов Ar-=SUP=-+-=/SUP=- и облучением нейтронами

2019 ◽  
Vol 45 (5) ◽  
pp. 24
Author(s):  
И.П. Щербаков ◽  
А.Е. Чмель
Keyword(s):  
Silicon Dioxide ◽  
Amorphous Silicon ◽  
Point Defects ◽  
Photoluminescence Spectrum ◽  
Thermal Neutrons ◽  
Optical Transitions ◽  
Atomic Collisions ◽  
Amorphous Silicon Dioxide ◽  
Spectral Bands ◽  
Atomic Nuclei

AbstractThe introduction of Si^+ ions and ions of other elements into amorphous silicon dioxide during their interaction causes damage to the structural bonds, which is observed in the vibrational spectral bands. Pure SiO_2 has no optical transitions but the bands of induced point defects appear in the photoluminescence spectrum when ions/neutrons are introduced. The generation of photoluminescence-active defects by fluxes of Ar^+ ion and thermal neutrons is compared. It is shown that the nature of damage to the structure is associated with both the specifics of the synthesis/processing of the material and the features of the interaction between the substance and ions (atomic collisions) and neutrons (collisions with atomic nuclei).

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