Modeling of gas-phase and surface reactions in liquid-source chemical-vapor deposition of (Ba,Sr)TiO3 films

1999 ◽  
Vol 86 (2) ◽  
pp. 1082-1089 ◽  
Author(s):  
Mikio Yamamuka ◽  
Takaaki Kawahara ◽  
Masayoshi Tarutani ◽  
Tsuyoshi Horikawa ◽  
Tatsuo Oomori ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Surface Reactions ◽  
Chemical Vapor ◽  
Liquid Source

Measurement of Atomic Incorporation Rates and Modeling of Surface Reactions in (Ba, Sr)TiO3Films Prepared by a Liquid Source Chemical Vapor Deposition

2001 ◽  
Vol 40 (Part 1, No. 5A) ◽  
pp. 3435-3441 ◽  
Author(s):  
Mikio Yamamuka ◽  
Takaaki Kawahara ◽  
Masayoshi Tarutani ◽  
Tsuyoshi Horikawa ◽  
Teruo Shibano ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Surface Reactions ◽  
Chemical Vapor ◽  
Liquid Source

A Kinetic Model for Metalorganic Chemical Vapor Deposition of GaAs from Trimethylgallium and Arsine

1988 ◽  
Vol 131 ◽  
Author(s):  
Triantafillos J. Mountziaris ◽  
Klavs F. Jensen
Keyword(s):  
Chemical Vapor Deposition ◽  
Kinetic Model ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Transport Model ◽  
Surface Reactions ◽  
Experimental Studies ◽  
Chemical Vapor ◽  
Metalorganic Chemical

ABSTRACTA kinetic model for metalorganic chemical vapor deposition (MOCVD) of GaAs from trimethylgallium and arsine is presented. The proposed mechanism includes 15 gas-phase species, 17 gas-phase reactions, 9 surface species and 29 surface reactions. The surface reactions take into account different crystallographic orientations of the GaAs substrate. Sensitivity analysis and existing experimental observations have been used to develop the reduced mechanism from the large number of reactions that might in principle occur. Rate constants are estimated by using thermochemical methods and reported experimental data. The kinetic mechanism is combined with a two-dimensional transport model of a hot-wall tubular reactor used in experimental studies. Model predictions of gas-phase composition and GaAs growth rates show good agreement with published experimental studies. In addition, the model predicts reported trends in carbon incorporation.

Kinetics of Diamond-Like Film Growth Using Filament-Assisted Chemical Vapor Deposition

1994 ◽  
Vol 363 ◽  
Author(s):  
G. Gorsuch ◽  
Y. Jin ◽  
N. K. Ingle ◽  
T. J. Mountziarisi ◽  
W.-Y. Yu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Kinetic Model ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Film Growth ◽  
Transport Model ◽  
Surface Reactions ◽  
Chemical Vapor ◽  
Surface Kinetics ◽  
Si Substrates

AbstractA detailed kinetic model of diamond-like film growth from methane diluted in hydrogen using low-pressure, filament-assisted chemical vapor deposition (FACVD) has been developed. The model includes both gas-phase and surface reactions. The surface kinetics include adsorption of CH3· and H·, abstraction reactions by gas-phase radicals, desorption, and two pathways for diamond (sp3) and graphitic carbon (sp2) growth. It is postulated that adsorbed CH2· species are the major film precursors. The proposed kinetic model was incorporated into a transport model describing flow, heat and mass transfer in stagnation flow FACVD reactors. Diamond-like films were deposited on preseeded Si substrates in such a reactor at a pressure of 26 Torr, inlet gas composition ranging from 0.5% to 1.5% methane in hydrogen and substrate temperatures ranging from 600 to 950°C. The best films were obtained at low methane concentrations and substrate temperature of 700°C. The films were characterized using Scanning Electron Microscopy (SEM) and Raman spectroscopy. Observations from our experiments and growth rate data from similar experiments reported in the literature [1] were used to estimate unknown kinetic parameters of surface reactions. The proposed model predicts observed film growth rates, compositions and stable species distributions in the gas phase. It is the first complete model of FACVD that includes gas-phase and surface kinetics coupled with transport phenomena.

scholarly journals Gas Phase Chemistry of Trimethylboron in Thermal Chemical Vapor Deposition

2017 ◽  
Vol 121 (47) ◽  
pp. 26465-26471 ◽  
Author(s):  
Mewlude Imam ◽  
Laurent Souqui ◽  
Jan Herritsch ◽  
Andreas Stegmüller ◽  
Carina Höglund ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

scholarly journals Gas-phase aluminium acetylacetonate decomposition: Revision of the current mechanism by VUV synchrotron radiation

2021 ◽  
Author(s):  
Sebastian Grimm ◽  
Seung-Jin Baik ◽  
Patrick Hemberger ◽  
Andras Bodi ◽  
Andreas Kempf ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Synchrotron Radiation ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Aluminium Oxide ◽  
Chemical Vapor ◽  
Phase Decomposition ◽  
Common Precursor ◽  
Current Mechanism

Although aluminium acetylacetonate, Al(C5H7O2)3, is a common precursor for chemical vapor deposition (CVD) of aluminium oxide, its gas phase decomposition is not very well investigated. Here, we studied its thermal...

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