Distant-neighbor exchange constants in Mn-based dilute magnetic semiconductors

1999 ◽  
Vol 85 (8) ◽  
pp. 5950-5952 ◽  
Author(s):  
V. Bindilatti ◽  
E. ter Haar ◽  
N. F. Oliveira ◽  
Y. Shapira ◽  
M. T. Liu
Keyword(s):  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Exchange Constants ◽  
Distant Neighbor

Distant-Neighbor Exchange Constants in Dilute Magnetic Semiconductors

1998 ◽  
Vol 80 (24) ◽  
pp. 5425-5428 ◽  
Author(s):  
V. Bindilatti ◽  
E. ter Haar ◽  
N. F. Oliveira ◽  
Y. Shapira ◽  
M. T. Liu
Keyword(s):  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Exchange Constants ◽  
Distant Neighbor

scholarly journals The Al Doping Effect on Epitaxial (In,Mn)As Dilute Magnetic Semiconductors Prepared by Ion Implantation and Pulsed Laser Melting

Materials ◽  
2021 ◽  
Vol 14 (15) ◽  
pp. 4138
Author(s):  
Ye Yuan ◽  
Yufang Xie ◽  
Ning Yuan ◽  
Mao Wang ◽  
René Heller ◽  
...  
Keyword(s):  
Curie Temperature ◽  
Ion Implantation ◽  
Diluted Magnetic Semiconductors ◽  
Laser Annealing ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors ◽  
Pulsed Laser ◽  
Laser Melting ◽  
Co Doping ◽  
Diluted Magnetic

One of the most attractive characteristics of diluted ferromagnetic semiconductors is the possibility to modulate their electronic and ferromagnetic properties, coupled by itinerant holes through various means. A prominent example is the modification of Curie temperature and magnetic anisotropy by ion implantation and pulsed laser melting in III–V diluted magnetic semiconductors. In this study, to the best of our knowledge, we performed, for the first time, the co-doping of (In,Mn)As diluted magnetic semiconductors by Al by co-implantation subsequently combined with a pulsed laser annealing technique. Additionally, the structural and magnetic properties were systematically investigated by gradually raising the Al implantation fluence. Unexpectedly, under a well-preserved epitaxial structure, all samples presented weaken Curie temperature, magnetization, as well as uniaxial magnetic anisotropies when more aluminum was involved. Such a phenomenon is probably due to enhanced carrier localization introduced by Al or the suppression of substitutional Mn atoms.

scholarly journals Origin of transition metal clustering tendencies in GaAs based dilute magnetic semiconductors

2005 ◽  
Vol 86 (17) ◽  
pp. 172504 ◽  
Author(s):  
Priya Mahadevan ◽  
J. M. Osorio-Guillén ◽  
Alex Zunger
Keyword(s):  
Transition Metal ◽  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors

Room temperature ferromagnetism in III–V and II–IV–V2 dilute magnetic semiconductors

2006 ◽  
Vol 374-375 ◽  
pp. 430-432 ◽  
Author(s):  
V.G. Storchak ◽  
D.G. Eshchenko ◽  
H. Luetkens ◽  
E. Morenzoni ◽  
R.L. Lichti ◽  
...  
Keyword(s):  
Room Temperature ◽  
Magnetic Semiconductors ◽  
Room Temperature Ferromagnetism ◽  
Dilute Magnetic Semiconductors

Role of Embedded Clustering in Dilute Magnetic Semiconductors: Cr Doped GaN

2005 ◽  
Vol 95 (25) ◽  
Author(s):  
X. Y. Cui ◽  
J. E. Medvedeva ◽  
B. Delley ◽  
A. J. Freeman ◽  
N. Newman ◽  
...  
Keyword(s):  
Magnetic Semiconductors ◽  
Dilute Magnetic Semiconductors
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