Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors

Ze Yuan; Aneesh Nainani; Brian R. Bennett; J. Brad Boos; Mario G. Ancona; Krishna C. Saraswat

doi:10.1063/1.3699226

Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3699226 ◽

2012 ◽

Vol 100 (14) ◽

pp. 143503 ◽

Cited By ~ 7

Author(s):

Ze Yuan ◽

Aneesh Nainani ◽

Brian R. Bennett ◽

J. Brad Boos ◽

Mario G. Ancona ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Band Engineering ◽

State Response

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Interface trap density and mobility extraction in InGaAs buried quantum well metal-oxide-semiconductor field-effect-transistors by gated Hall method

Applied Physics Letters ◽

10.1063/1.4870257 ◽

2014 ◽

Vol 104 (13) ◽

pp. 131605 ◽

Cited By ~ 3

Author(s):

Thenappan Chidambaram ◽

Dmitry Veksler ◽

Shailesh Madisetti ◽

Andrew Greene ◽

Michael Yakimov ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Trap Density ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

Hall Method

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Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

IEEE Electron Device Letters ◽

10.1109/led.2015.2438433 ◽

2015 ◽

Vol 36 (7) ◽

pp. 672-674 ◽

Cited By ~ 15

Author(s):

Tae-Woo Kim ◽

Hyuk-Min Kwon ◽

Seung Heon Shin ◽

Chan-Soo Shin ◽

Won-Kyu Park ◽

...

Keyword(s):

High Pressure ◽

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack ◽

Ingaas Quantum Well

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Modeling and Characterization of InAs Quantum-Well Metal-Oxide-Semiconductor Field Effect Transistors on Quartz for 1.0 THz Wave Detection

2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) ◽

10.1109/edtm47692.2020.9117824 ◽

2020 ◽

Author(s):

T. Maeda ◽

H. Ishii ◽

W. H. Chang ◽

H. Kanaya ◽

T. Asano

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thz Wave ◽

Wave Detection

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Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.114001 ◽

2012 ◽

Vol 51 (11R) ◽

pp. 114001 ◽

Cited By ~ 1

Author(s):

Naoki Tega ◽

Hiroshi Miki ◽

Toshiyuki Mine ◽

Kazuyoshi Torii

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise

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Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.114001 ◽

2012 ◽

Vol 51 ◽

pp. 114001

Author(s):

Naoki Tega ◽

Hiroshi Miki ◽

Toshiyuki Mine ◽

Kazuyoshi Torii

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise

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Transconductance degradation and interface state generation in metal‐oxide‐semiconductor field‐effect transistors with oxynitride gate dielectrics under hot‐carrier stress

Applied Physics Letters ◽

10.1063/1.102819 ◽

1990 ◽

Vol 56 (3) ◽

pp. 250-252 ◽

Cited By ~ 8

Author(s):

G. Q. Lo ◽

W. C. Ting ◽

D. K. Shih ◽

D. L. Kwong

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Hot Carrier Stress ◽

State Generation

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L$_{\mathrm {g}} = 80$ -nm Trigate Quantum-Well In0.53Ga0.47As Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack

IEEE Electron Device Letters ◽

10.1109/led.2015.2393554 ◽

2015 ◽

Vol 36 (3) ◽

pp. 223-225 ◽

Cited By ~ 24

Author(s):

Tae-Woo Kim ◽

Dong-Hyi Koh ◽

Chan-Soo Shin ◽

Won-Kyu Park ◽

Tommaso Orzali ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Stack

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Gate length and temperature dependence of negative differential transconductance in silicon quantum well metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.4931662 ◽

2015 ◽

Vol 118 (12) ◽

pp. 124505 ◽

Cited By ~ 7

Author(s):

Clint Naquin ◽

Mark Lee ◽

Hal Edwards ◽

Guru Mathur ◽

Tathagata Chatterjee ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length

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Physical investigation of gate capacitance in In0.53Ga0.47As/In0.52Al0.48As quantum-well metal-oxide-semiconductor field-effect-transistors

AIP Advances ◽

10.1063/1.5034041 ◽

2018 ◽

Vol 8 (7) ◽

pp. 075203

Author(s):

Hyeon-Bhin Jo ◽

Jung-Ho Park ◽

Seung-Woo Son ◽

Ji-Min Baek ◽

Do-Young Yun ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Investigation ◽

Gate Capacitance

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Impact of virtual substrate growth on high performance strained Si/SiGe double quantum well metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics ◽

10.1063/1.1619197 ◽

2003 ◽

Vol 94 (10) ◽

pp. 6855-6863 ◽

Cited By ~ 13

Author(s):

S. H. Olsen ◽

A. G. O’Neill ◽

S. Chattopadhyay ◽

K. S. K. Kwa ◽

L. S. Driscoll ◽

...

Keyword(s):

Quantum Well ◽

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Quantum ◽

Strained Si ◽

Double Quantum Well

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