Modeling of transitions in Mn2+ doped ZnS nanocrystals and predicting reduced lasing threshold current density and enhanced electro-optic effects in ZnCdSe–ZnMgSSe and InGaN–AlGaN pseudomorphic quantum dots

1999 ◽  
Vol 85 (5) ◽  
pp. 2706-2712 ◽  
Author(s):  
F. Jain ◽  
W. Huang
Keyword(s):  
Quantum Dots ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Lasing Threshold ◽  
Electro Optic ◽  
Zns Nanocrystals

Formation of Stacked Self-Assembled InAs Quantum Dots in GaAs Matrix for Laser Applications

1995 ◽  
Vol 417 ◽  
Author(s):  
V. M. Ustinov ◽  
A. Yu. Egorov ◽  
A. E Zhukov ◽  
N. N. Ledentsov ◽  
M. V. Maksimov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Current Density ◽  
Ground State ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Laser Applications ◽  
Inas Quantum Dots ◽  
Gaas Matrix ◽  
Single Sheet ◽  
Thermal Stability Of

AbstractVertically coupled InAs quantum dots have been synthesized by MBE through successive deposition of InAs dot sheets and thin GaAs spacers. The energy of ground state transition in PL spectra has been found to depend on a number of dot sheets and the spacer width. Injection laser based on vertically coupled quantum dots demonstrated lasing via the ground state of quantum dots in the entire 80K-300K temperature range. Lower threshold current density and wider range of the thermal stability of threshold current density as compared to the single sheet quantum dot laser have been observed.

Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

1979 ◽  
Vol 18 (9) ◽  
pp. 1795-1805 ◽  
Author(s):  
Yoshio Itaya ◽  
Yasuharu Suematsu ◽  
Shinya Katayama ◽  
Katsumi Kishino ◽  
Shigehisa Arai
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Double Heterostructure ◽  
Low Threshold
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