Post-annealing effects on antireduction characteristics of IrO2/Pb(ZrxTi1−x)O3/Pt ferroelectric capacitors

1999 ◽  
Vol 85 (2) ◽  
pp. 1069-1074 ◽  
Author(s):  
Keiko Kushida-Abdelghafar ◽  
Masahiko Hiratani ◽  
Yoshihisa Fujisaki
Keyword(s):  
Post Annealing ◽  
Annealing Effects ◽  
Ferroelectric Capacitors

scholarly journals Synthesis and post-annealing effects of alkaline-metal-ethylenediamine-intercalated superconductors A(C2H8N2) Fe2−Se2 (A= Li, Na) with Tc= 45 K

2014 ◽  
Vol 504 ◽  
pp. 8-11 ◽  
Author(s):  
Takashi Noji ◽  
Takehiro Hatakeda ◽  
Shohei Hosono ◽  
Takayuki Kawamata ◽  
Masatsune Kato ◽  
...  
Keyword(s):  
Alkaline Metal ◽  
Post Annealing ◽  
Annealing Effects

Post-annealing effects on the physical and optical waveguiding properties of RF sputtered ZnO thin films

2015 ◽  
Vol 11 (5) ◽  
pp. 862-870 ◽  
Author(s):  
Faiza Meriche ◽  
Tahar Touam ◽  
Azeddine Chelouche ◽  
Mohamed Dehimi ◽  
Jeanne Solard ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Post Annealing ◽  
Annealing Effects ◽  
Optical Waveguiding

Post-annealing effects on the microstructure and magnetic properties of hot-deformed Nd-Fe-B magnets

2022 ◽  
pp. 1-1
Author(s):  
Hee-Ryoung Cha ◽  
Ga-Yeong Kim ◽  
Tae-Hoon Kim ◽  
Sang-Hyub Lee ◽  
Dong-Hwan Kim ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Post Annealing ◽  
Annealing Effects ◽  
Microstructure And Magnetic Properties

Post-Annealing Effects on the Surface Roughness of Undoped and Al-Doped ZnO Thin Films Deposited by Atomic Layer Deposition

2013 ◽  
Vol 734-737 ◽  
pp. 2492-2495
Author(s):  
Yong June Choi ◽  
Kyung Mun Kang ◽  
Hyung Ho Park
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Atomic Layer Deposition ◽  
Morphological Changes ◽  
Atomic Layer ◽  
Root Mean Square Roughness ◽  
Post Annealing ◽  
Layer Deposition ◽  
Annealing Effects ◽  
Doped Zno

The post-annealing effects on the surface morphological changes of undoped and Al-doped ZnO (ZnO:Al) thin films deposited by atomic layer deposition (ALD) were investigated. The as-grown films were deposited by ALD at growth temperature of 200°C and also, post-annealing of the samples was accomplished at 300°C for 1 h under nitrogen atmosphere. The X-ray diffraction of the films was monitored to study the crystallinity of the films according to post-anneal. The field emission-scanning electron microscopy and atomic force microscopy were conducted to observe the surface morphological changes and measure the root-mean-square roughness of the films in order to analysis the post-annealing effects on the surface roughness of the films.

Interfacial thermal resistance across graphene/Al2O3 and graphene/metal interfaces and post-annealing effects

Carbon ◽  
2017 ◽  
Vol 123 ◽  
pp. 18-25 ◽  
Author(s):  
Daniel Villaroman ◽  
Xinjiang Wang ◽  
Weijing Dai ◽  
Lin Gan ◽  
Ruizhe Wu ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Interfacial Thermal Resistance ◽  
Post Annealing ◽  
Annealing Effects ◽  
Metal Interfaces

Post-annealing effects on the surface structure and carrier lifetime of evaporated BaSi2 films

2017 ◽  
Vol 56 (4S) ◽  
pp. 04CS07 ◽  
Author(s):  
Kosuke O. Hara ◽  
Cham Thi Trinh ◽  
Yasuyoshi Kurokawa ◽  
Keisuke Arimoto ◽  
Junji Yamanaka ◽  
...  
Keyword(s):  
Surface Structure ◽  
Carrier Lifetime ◽  
Post Annealing ◽  
Annealing Effects

Growth of ZnS Films and Post-Annealing Effects

2008 ◽  
Vol 53 (1) ◽  
pp. 331-334 ◽  
Author(s):  
B.-S. Yun ◽  
JunHo Kim
Keyword(s):  
Post Annealing ◽  
Annealing Effects ◽  
Zns Films

POST-ANNEALING EFFECTS ON THE STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF ITO FILMS STUDIED BY SPECTROSCOPIC ELLIPSOMETRY

2010 ◽  
Vol 24 (06) ◽  
pp. 595-605 ◽  
Author(s):  
Y. INRITSAPONG ◽  
P. CHINDAUDOM ◽  
N. NUNTAWONG ◽  
V. PATTHANASETTHAKUL ◽  
M. HORPHATHUM ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electrical Properties ◽  
Spectroscopic Ellipsometry ◽  
Annealing Temperature ◽  
Analysis Data ◽  
Optical And Electrical Properties ◽  
Optical Index ◽  
Post Annealing ◽  
Ito Thin Films ◽  
Annealing Effects

ITO thin films were coated on unheated glass and Si -wafer (100) substrates by ion-assisted evaporation. The effects of post annealing, in vacuum at 250°C and 350°C for 1 h, on the structural, optical and electrical properties were studied. The structure was characterized by X-ray diffraction (XRD). The surface morphology of the films was investigated by atomic force microscopy (AFM). The optical properties were evaluated by spectrophotometer and spectroscopic ellipsometry (SE). The resistivity was measured by the four-point probes method. It was found that the increase of post-annealing temperature would improve the film crystallinity and electrical properties. The preferred orientation of ITO thin film after annealing is (222). The resistivity of the as-deposited film is found to be 5.52 × 10-4 Ωcm and decreases to 2.11 × 10-4 Ωcm after annealing at 350°C. The AFM image reveals that the surface roughness decreases with increasing annealing temperature. The uniqueness test based on SE analysis data has been applied for ITO modeling. This modeling indicates that the film microstructure consists of three layers including the higher-index ITO layer, the effective medium approximation (EMA) layer to represent a slightly lower optical index, and the surface roughness layer on top. The EMA thickness and its relative composition decrease with increasing annealing temperature. The extinction coefficient in the IR region increases whereas the refractive index decreases with increasing annealing temperature.

Sign in / Sign up

Export Citation Format

Share Document