Post-annealing effects on the surface structure and carrier lifetime of evaporated BaSi2 films

2017 ◽  
Vol 56 (4S) ◽  
pp. 04CS07 ◽  
Author(s):  
Kosuke O. Hara ◽  
Cham Thi Trinh ◽  
Yasuyoshi Kurokawa ◽  
Keisuke Arimoto ◽  
Junji Yamanaka ◽  
...  
Keyword(s):  
Surface Structure ◽  
Carrier Lifetime ◽  
Post Annealing ◽  
Annealing Effects

scholarly journals Synthesis and post-annealing effects of alkaline-metal-ethylenediamine-intercalated superconductors A(C2H8N2) Fe2−Se2 (A= Li, Na) with Tc= 45 K

2014 ◽  
Vol 504 ◽  
pp. 8-11 ◽  
Author(s):  
Takashi Noji ◽  
Takehiro Hatakeda ◽  
Shohei Hosono ◽  
Takayuki Kawamata ◽  
Masatsune Kato ◽  
...  
Keyword(s):  
Alkaline Metal ◽  
Post Annealing ◽  
Annealing Effects

Post-annealing effects on the physical and optical waveguiding properties of RF sputtered ZnO thin films

2015 ◽  
Vol 11 (5) ◽  
pp. 862-870 ◽  
Author(s):  
Faiza Meriche ◽  
Tahar Touam ◽  
Azeddine Chelouche ◽  
Mohamed Dehimi ◽  
Jeanne Solard ◽  
...  
Keyword(s):  
Thin Films ◽  
Zno Thin Films ◽  
Post Annealing ◽  
Annealing Effects ◽  
Optical Waveguiding

Post-annealing effects on the microstructure and magnetic properties of hot-deformed Nd-Fe-B magnets

2022 ◽  
pp. 1-1
Author(s):  
Hee-Ryoung Cha ◽  
Ga-Yeong Kim ◽  
Tae-Hoon Kim ◽  
Sang-Hyub Lee ◽  
Dong-Hwan Kim ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Post Annealing ◽  
Annealing Effects ◽  
Microstructure And Magnetic Properties

Post-Annealing Effects on the Surface Roughness of Undoped and Al-Doped ZnO Thin Films Deposited by Atomic Layer Deposition

2013 ◽  
Vol 734-737 ◽  
pp. 2492-2495
Author(s):  
Yong June Choi ◽  
Kyung Mun Kang ◽  
Hyung Ho Park
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Atomic Layer Deposition ◽  
Morphological Changes ◽  
Atomic Layer ◽  
Root Mean Square Roughness ◽  
Post Annealing ◽  
Layer Deposition ◽  
Annealing Effects ◽  
Doped Zno

The post-annealing effects on the surface morphological changes of undoped and Al-doped ZnO (ZnO:Al) thin films deposited by atomic layer deposition (ALD) were investigated. The as-grown films were deposited by ALD at growth temperature of 200°C and also, post-annealing of the samples was accomplished at 300°C for 1 h under nitrogen atmosphere. The X-ray diffraction of the films was monitored to study the crystallinity of the films according to post-anneal. The field emission-scanning electron microscopy and atomic force microscopy were conducted to observe the surface morphological changes and measure the root-mean-square roughness of the films in order to analysis the post-annealing effects on the surface roughness of the films.

Carrier Lifetimes in 4H-SiC Epitaxial Layers on the C-Face Enhanced by Carbon Implantation

2018 ◽  
Vol 924 ◽  
pp. 432-435 ◽  
Author(s):  
Mitsuhiro Kushibe ◽  
Johji Nishio ◽  
Ryosuke Iijima ◽  
Akira Miyasaka ◽  
Hirokuni Asamizu ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Layer Thickness ◽  
Epitaxial Layer ◽  
Carrier Lifetime ◽  
Epitaxial Layers ◽  
Carrier Lifetimes ◽  
Post Annealing

Carrier lifetime in low carrier concentration 4H-SiC epitaxial layers grown on the C-face was enhanced by using carbon implantation and post annealing. The measured carrier lifetime increased with the thickness of the epitaxial layer and was 11.4 µs for the 150 µm thick epitaxial layer. The internal carrier lifetime was estimated as 21 µs from the dependence of the measured carrier lifetime on the epitaxial layer thickness. This value is almost comparable to the reported values of the internal carrier lifetime for the layers grown on the Si-face.

Post-annealing effects on antireduction characteristics of IrO2/Pb(ZrxTi1−x)O3/Pt ferroelectric capacitors

1999 ◽  
Vol 85 (2) ◽  
pp. 1069-1074 ◽  
Author(s):  
Keiko Kushida-Abdelghafar ◽  
Masahiko Hiratani ◽  
Yoshihisa Fujisaki
Keyword(s):  
Post Annealing ◽  
Annealing Effects ◽  
Ferroelectric Capacitors

Interfacial thermal resistance across graphene/Al2O3 and graphene/metal interfaces and post-annealing effects

Carbon ◽  
2017 ◽  
Vol 123 ◽  
pp. 18-25 ◽  
Author(s):  
Daniel Villaroman ◽  
Xinjiang Wang ◽  
Weijing Dai ◽  
Lin Gan ◽  
Ruizhe Wu ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Interfacial Thermal Resistance ◽  
Post Annealing ◽  
Annealing Effects ◽  
Metal Interfaces

SPUTTERING DEPOSITION OF Tl–Ca–Ba–Cu–O THIN FILMS WITH ZERO RESISTANCE AT 101 K

1989 ◽  
Vol 03 (13) ◽  
pp. 1013-1016 ◽  
Author(s):  
S. L. YAN ◽  
X. J. HU ◽  
Q. X. SONG ◽  
H. L. CAO ◽  
J. YAN ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Surface Structure ◽  
Single Phase ◽  
Xrd Analysis ◽  
Dc Magnetron Sputtering ◽  
Ceramic Substrates ◽  
Sputtering Deposition ◽  
Post Annealing ◽  
Zero Resistance

Superconducting Tl–Ca–Ba–Cu–O thin films have been prepared by dc magnetron sputtering from a pair of Tl 2 Ca 1 Ba 3 Cu 4 O y bulk targets. The post-annealing films on ZrO 2 ceramic substrates exhibit an onset temperature of about 125 K and zero resistance as high as 101 K. SEM showed a smooth terraced surface structure. The XRD analysis proved that the films were polycrystalline and were not single phase superconducting material.

Sign in / Sign up

Export Citation Format

Share Document