Investigation of the band offsets caused by thin Al2O3 layers in HfO2 based Si metal oxide semiconductor devices
Keyword(s):
2009 ◽
Vol 27
(3)
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pp. 1261
Keyword(s):
2011 ◽
Vol 32
(7)
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pp. 076001
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2010 ◽
Vol 242
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pp. 012010
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Keyword(s):
Keyword(s):
2011 ◽
Vol 14
(5)
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pp. G27
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