Spectroscopy of conduction band electrons in transparent metal oxide semiconductor films: optical determination of the flatband potential of colloidal titanium dioxide films

Guido Rothenberger; Donald Fitzmaurice; Michael Graetzel

doi:10.1021/j100193a062

Spectroscopy of conduction band electrons in transparent metal oxide semiconductor films: optical determination of the flatband potential of colloidal titanium dioxide films

The Journal of Physical Chemistry ◽

10.1021/j100193a062 ◽

1992 ◽

Vol 96 (14) ◽

pp. 5983-5986 ◽

Cited By ~ 350

Author(s):

Guido Rothenberger ◽

Donald Fitzmaurice ◽

Michael Graetzel

Keyword(s):

Titanium Dioxide ◽

Metal Oxide ◽

Conduction Band ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Films ◽

Titanium Dioxide Films ◽

Optical Determination

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Determination of deformation potential constant of the conduction band in Si from electron heating experiments on Si metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2786594 ◽

2007 ◽

Vol 91 (13) ◽

pp. 132118 ◽

Cited By ~ 4

Author(s):

K. H. Park ◽

T. Unuma ◽

K. Hirakawa ◽

S. Takagi

Keyword(s):

Metal Oxide ◽

Conduction Band ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Deformation Potential ◽

Electron Heating ◽

Potential Constant

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Determination of Fowler–Nordheim tunneling parameters in Metal–Oxide–Semiconductor structure including oxide field correction using a vertical optimization method

Solid-State Electronics ◽

10.1016/j.sse.2016.04.007 ◽

2016 ◽

Vol 122 ◽

pp. 56-63 ◽

Cited By ~ 9

Author(s):

S. Toumi ◽

Z. Ouennoughi ◽

K.C. Strenger ◽

L. Frey

Keyword(s):

Metal Oxide ◽

Optimization Method ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Nordheim Tunneling ◽

Metal Oxide Semiconductor Structure

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Determination of the Interface Trap Density in Metal Oxide Semiconductor Field-Effect Transistor through Subthreshold Slope Measurement

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.4393 ◽

1993 ◽

Vol 32 (Part 1, No. 10) ◽

pp. 4393-4397 ◽

Cited By ~ 17

Author(s):

Jong-Son Lyu ◽

Kee-Soo Nam ◽

Choochon Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Trap Density ◽

Interface Trap ◽

Subthreshold Slope ◽

Effect Transistor

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Magnetic state dependent transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

AIP Advances ◽

10.1063/1.4935441 ◽

2015 ◽

Vol 5 (11) ◽

pp. 117207 ◽

Cited By ~ 4

Author(s):

Isidoro Martinez ◽

Juan Pedro Cascales ◽

Antonio Lara ◽

Pablo Andres ◽

Farkhad G. Aliev

Keyword(s):

Metal Oxide ◽

Magnetic State ◽

Photovoltaic Effect ◽

Metal Oxide Semiconductor ◽

Ferromagnetic Metal ◽

Oxide Semiconductor ◽

Semiconductor Films ◽

State Dependent

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Determination of Flat-Band Voltages for Fully Depleted Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET's)

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.2678 ◽

1992 ◽

Vol 31 (Part 1, No. 9A) ◽

pp. 2678-2681 ◽

Cited By ~ 2

Author(s):

Jong-Son Lyu ◽

Kee-Soo Nam ◽

Choochon Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Flat Band ◽

Fully Depleted

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GaAs metal–oxide–semiconductor device with titanium dioxide as dielectric layer: effect of oxide thickness on the device performance

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/44/15/155104 ◽

2011 ◽

Vol 44 (15) ◽

pp. 155104 ◽

Cited By ~ 15

Author(s):

Souvik Kundu ◽

Sandip Kumar Roy ◽

P Banerji

Keyword(s):

Titanium Dioxide ◽

Metal Oxide ◽

Dielectric Layer ◽

Semiconductor Device ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Device Performance ◽

Layer Effect

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Complementary metal–oxide–semiconductor compatible athermal silicon nitride/titanium dioxide hybrid micro-ring resonators

Applied Physics Letters ◽

10.1063/1.4790440 ◽

2013 ◽

Vol 102 (5) ◽

pp. 051106 ◽

Cited By ~ 29

Author(s):

Feng Qiu ◽

Andrew M. Spring ◽

Feng Yu ◽

Shiyoshi Yokoyama

Keyword(s):

Titanium Dioxide ◽

Silicon Nitride ◽

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ring Resonators

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Photosensitization of composite metal oxide semiconductor films

Berichte der Bunsengesellschaft für physikalische Chemie ◽

10.1002/bbpc.19971011118 ◽

1997 ◽

Vol 101 (11) ◽

pp. 1651-1653 ◽

Cited By ~ 6

Author(s):

I. Bedja ◽

S. Hotchandani ◽

P. V. Kamat

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Films

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Experimental determination of the frequency factor of thermal annealing processes in metal–oxide–semiconductor gate-oxide structures

Journal of Applied Physics ◽

10.1063/1.365721 ◽

1997 ◽

Vol 82 (8) ◽

pp. 4102-4107 ◽

Cited By ~ 20

Author(s):

F. Saigné ◽

L. Dusseau ◽

L. Albert ◽

J. Fesquet ◽

J. Gasiot ◽

...

Keyword(s):

Metal Oxide ◽

Experimental Determination ◽

Thermal Annealing ◽

Gate Oxide ◽

Frequency Factor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Marked Cofuel Tuning of Combustion Synthesis Pathways for Metal Oxide Semiconductor Films

Advanced Electronic Materials ◽

10.1002/aelm.201900540 ◽

2019 ◽

Vol 5 (10) ◽

pp. 1900540 ◽

Cited By ~ 3

Author(s):

Binghao Wang ◽

Matthew J. Leonardi ◽

Wei Huang ◽

Yao Chen ◽

Li Zeng ◽

...

Keyword(s):

Metal Oxide ◽

Combustion Synthesis ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Films

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