Hydrogen plasma enhanced crystallization of hydrogenated amorphous silicon films

1999 ◽  
Vol 85 (3) ◽  
pp. 1900-1906 ◽  
Author(s):  
K. Pangal ◽  
J. C. Sturm ◽  
S. Wagner ◽  
T. H. Büyüklimanli
2005 ◽  
Vol 864 ◽  
Author(s):  
F. Kail ◽  
A. Hadjadj ◽  
P. Roca i Cabarrocas

AbstractWe have studied the evolution of the structure of boron-doped hydrogenated amorphous silicon films exposed to a hydrogen plasma. From the early stages of exposure, hydrogen diffuses and forms a thick H-rich subsurface. At longer times, hydrogen plasma leads to the formation of a microcrystalline layer via chemical transport without crystallization of the initial layer. We observe that the hydrogen content increases in the films during a plasma exposure and once the microcrystalline layer is formed hydrogen diffuses out of the sample accompanied with a decrease in the boron content. This effect can be attributed to the electric field developed within the heterojunction a-Si:H/μc-Si:H that drives the positively charged hydrogen atoms in the boron-doped layer towards the μc-Si:H layer.


1983 ◽  
Vol 9 (1-3) ◽  
pp. 295-300
Author(s):  
S. Galassini ◽  
G. Micocci ◽  
C. Pennetta ◽  
A. Rizzo ◽  
A. Tepore ◽  
...  

1995 ◽  
Vol 78 (1) ◽  
pp. 317-320 ◽  
Author(s):  
J. P. Kleider ◽  
C. Longeaud ◽  
M. Barranco‐Diaz ◽  
P. Morin ◽  
P. Roca i Cabarrocas

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