Characterization of germanium/silicon p–n junction fabricated by low temperature direct wafer bonding and layer exfoliation

Farzan Gity; Ki Yeol Byun; Ko-Hsin Lee; Karim Cherkaoui; John M. Hayes; Alan P. Morrison; Cindy Colinge; Brian Corbett

doi:10.1063/1.3688174

Characterization of germanium/silicon p–n junction fabricated by low temperature direct wafer bonding and layer exfoliation

Applied Physics Letters ◽

10.1063/1.3688174 ◽

2012 ◽

Vol 100 (9) ◽

pp. 092102 ◽

Cited By ~ 20

Author(s):

Farzan Gity ◽

Ki Yeol Byun ◽

Ko-Hsin Lee ◽

Karim Cherkaoui ◽

John M. Hayes ◽

...

Keyword(s):

Low Temperature ◽

Wafer Bonding ◽

Direct Wafer Bonding ◽

Germanium Silicon

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High Precision Low Temperature Direct Wafer Bonding Technology for Wafer-Level 3D ICs Manufacturing

ECS Transactions ◽

10.1149/07509.0345ecst ◽

2016 ◽

Vol 75 (9) ◽

pp. 345-353 ◽

Cited By ~ 8

Author(s):

F. Kurz ◽

T. Plach ◽

J. Suss ◽

T. Wagenleitner ◽

D. Zinner ◽

...

Keyword(s):

Low Temperature ◽

High Precision ◽

Wafer Bonding ◽

Wafer Level ◽

3D Ics ◽

Direct Wafer Bonding ◽

Bonding Technology

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Low temperature GaAs/Si direct wafer bonding

Electronics Letters ◽

10.1049/el:20000507 ◽

2000 ◽

Vol 36 (7) ◽

pp. 677 ◽

Cited By ~ 28

Author(s):

M. Alexe ◽

V. Dragoi ◽

M. Reiche ◽

U. Gösele

Keyword(s):

Low Temperature ◽

Wafer Bonding ◽

Direct Wafer Bonding ◽

Low Temperature Gaas

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Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2012.08.048 ◽

2013 ◽

Vol 370 ◽

pp. 63-67 ◽

Cited By ~ 16

Author(s):

S. Gautier ◽

T. Moudakir ◽

G. Patriarche ◽

D.J. Rogers ◽

V.E. Sandana ◽

...

Keyword(s):

Thin Films ◽

Wafer Bonding ◽

Room Temperature ◽

Wafer Scale ◽

Glass Substrates ◽

Direct Wafer Bonding ◽

Movpe Growth ◽

Lift Off ◽

Compositional Characterization

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Low-temperature direct wafer bonding and selective etching of yttrium iron garnet films on InP substrates

Technical Digest. Summaries of papers presented at the Conference on Lasers and Electro-Optics. Postconference Edition. CLEO '99. Conference on Lasers and Electro-Optics (IEEE Cat. No.99CH37013) ◽

10.1109/cleo.1999.834500 ◽

2003 ◽

Author(s):

T. Izuhara ◽

M. Leby ◽

R.M. Osgood ◽

A. Kumar ◽

H. Bakhru

Keyword(s):

Low Temperature ◽

Wafer Bonding ◽

Yttrium Iron Garnet ◽

Selective Etching ◽

Yttrium Iron ◽

Garnet Films ◽

Direct Wafer Bonding ◽

Iron Garnet ◽

Inp Substrates

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Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2943667 ◽

2008 ◽

Vol 26 (4) ◽

pp. 1560 ◽

Cited By ~ 83

Author(s):

D. Liang ◽

J. E. Bowers

Keyword(s):

Low Temperature ◽

Wafer Bonding ◽

Silicon On Insulator ◽

Highly Efficient ◽

Direct Wafer Bonding ◽

Insulator Substrate

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Characterization of Si pn junctions fabricated by direct wafer bonding in ultra-high vacuum

Applied Physics Letters ◽

10.1063/1.120975 ◽

1998 ◽

Vol 72 (9) ◽

pp. 1095-1097 ◽

Cited By ~ 27

Author(s):

K. D. Hobart ◽

M. E. Twigg ◽

F. J. Kub ◽

C. A. Desmond

Keyword(s):

Wafer Bonding ◽

High Vacuum ◽

Ultra High Vacuum ◽

Direct Wafer Bonding ◽

Pn Junctions

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Low temperature direct wafer bonding of silicon using a glass intermediate layer

CAS '99 Proceedings. 1999 International Semiconductor Conference (Cat. No.99TH8389) ◽

10.1109/smicnd.1999.810582 ◽

2003 ◽

Cited By ~ 2

Author(s):

V. Dragoi ◽

M. Alexe ◽

M. Reiche ◽

U. Gosele

Keyword(s):

Low Temperature ◽

Wafer Bonding ◽

Intermediate Layer ◽

Direct Wafer Bonding

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Fabrication and characterization of silicon-on-insulator using low temperature wafer bonding

10.32657/10356/3934 ◽

2005 ◽

Author(s):

Weibo Yu

Keyword(s):

Low Temperature ◽

Wafer Bonding ◽

Silicon On Insulator ◽

Fabrication And Characterization

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Enhancement of Bonding Strength for Low Temperature Si3N4/Si3N4 Direct Wafer Bonding by Nitrogen-Plasma Activation and Hydrofluoric Pre-dip

ECS Meeting Abstracts ◽

10.1149/ma2014-02/34/1753 ◽

2014 ◽

Keyword(s):

Low Temperature ◽

Wafer Bonding ◽

Bonding Strength ◽

Nitrogen Plasma ◽

Plasma Activation ◽

Direct Wafer Bonding

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Low-temperature direct wafer bonding for III-V compound semiconductors to nanometer-scale grating arrays

2015 International Symposium on Next-Generation Electronics (ISNE) ◽

10.1109/isne.2015.7132038 ◽

2015 ◽

Author(s):

Bai-Ci Chen ◽

Yu-Chang Wu ◽

Jen-Hung Huang ◽

Hao-Chung Kuo ◽

Chien-Chung Lin

Keyword(s):

Low Temperature ◽

Wafer Bonding ◽

Compound Semiconductors ◽

Nanometer Scale ◽

Direct Wafer Bonding

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