High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

H. Jussila; P. Mattila; J. Oksanen; A. Perros; J. Riikonen; M. Bosund; A. Varpula; T. Huhtio; H. Lipsanen; M. Sopanen

doi:10.1063/1.3687199

High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

Applied Physics Letters ◽

10.1063/1.3687199 ◽

2012 ◽

Vol 100 (7) ◽

pp. 071606 ◽

Cited By ~ 15

Author(s):

H. Jussila ◽

P. Mattila ◽

J. Oksanen ◽

A. Perros ◽

J. Riikonen ◽

...

Keyword(s):

Fermi Level ◽

Atomic Layer ◽

Ex Situ ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K ◽

Atomic Layer Deposited Aln

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GaN metal–insulator–semiconductor high-electron-mobility transistor with plasma enhanced atomic layer deposited AlN as gate dielectric and passivation

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4816477 ◽

2013 ◽

Vol 31 (5) ◽

pp. 052201 ◽

Cited By ~ 5

Author(s):

Ya-Hsi Hwang ◽

Lu Liu ◽

Camilo Velez ◽

Fan Ren ◽

Brent P. Gila ◽

...

Keyword(s):

Electron Mobility ◽

Gate Dielectric ◽

Atomic Layer ◽

High Electron Mobility Transistor ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Atomic Layer Deposited Aln

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A Substitution for the High- k Dielectric in an AlGaN/GaN Metal-insulator-Semiconductor Heterostructure

Chinese Physics Letters ◽

10.1088/0256-307x/29/5/057702 ◽

2012 ◽

Vol 29 (5) ◽

pp. 057702 ◽

Cited By ~ 1

Author(s):

Yue-Chan Kong ◽

Fang-Shi Xue ◽

Jian-Jun Zhou ◽

Liang Li ◽

Chen Chen ◽

...

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Heterostructure ◽

High K ◽

High K Dielectric

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Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies

Journal of Applied Physics ◽

10.1063/1.4808093 ◽

2013 ◽

Vol 113 (20) ◽

pp. 204505 ◽

Cited By ~ 32

Author(s):

Christine M. Jackson ◽

Aaron R. Arehart ◽

Emre Cinkilic ◽

Brian McSkimming ◽

James S. Speck ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Deep Level ◽

Atomic Layer ◽

Interface Trap ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Layer Deposition

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Parameter extraction of gate tunneling current in metal–insulator–semiconductor capacitors based on ultra-thin atomic-layer deposited Al2O3

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-018-9104-2 ◽

2018 ◽

Vol 29 (18) ◽

pp. 15496-15501

Author(s):

Hector Uribe-Vargas ◽

Joel Molina-Reyes

Keyword(s):

Tunneling Current ◽

Atomic Layer ◽

Parameter Extraction ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Gate Tunneling

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Effect of High-k Passivation Layer on Electrical Properties of GaN Metal-Insulator-Semiconductor Devices

2019 International Conference on IC Design and Technology (ICICDT) ◽

10.1109/icicdt.2019.8790844 ◽

2019 ◽

Cited By ~ 1

Author(s):

Yutao Cai ◽

Yang Wang ◽

Miao Cui ◽

Wen Liu ◽

Huiqing Wen ◽

...

Keyword(s):

Electrical Properties ◽

Semiconductor Devices ◽

Passivation Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K

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Atomic Layer Deposition of High-k and Nanolaminate Dielectrics for Transparent Thin Film Transistors and Metal/Insulator/Metal Tunnel Diodes

ECS Meeting Abstracts ◽

10.1149/ma2011-01/22/1369 ◽

2011 ◽

Keyword(s):

Thin Film ◽

Atomic Layer Deposition ◽

Thin Film Transistors ◽

Atomic Layer ◽

Tunnel Diodes ◽

Metal Insulator ◽

Layer Deposition ◽

High K ◽

Metal Insulator Metal

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AlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with thermal atomic layer deposition AlN gate dielectric

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.096502 ◽

2018 ◽

Vol 57 (9) ◽

pp. 096502 ◽

Cited By ~ 4

Author(s):

Lin-Qing Zhang ◽

Peng-Fei Wang

Keyword(s):

Atomic Layer Deposition ◽

Electron Mobility ◽

Gate Dielectric ◽

Atomic Layer ◽

High Electron Mobility Transistor ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Semiconductor ◽

Layer Deposition

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Blistering of atomic layer deposition Al2O3 layers grown on silicon and its effect on metal–insulator–semiconductor structures

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4768170 ◽

2013 ◽

Vol 31 (1) ◽

pp. 01A128 ◽

Cited By ~ 16

Author(s):

Oihane Beldarrain ◽

Marta Duch ◽

Miguel Zabala ◽

Joan Marc Rafí ◽

Mireia Bargalló González ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Layer Deposition

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Characterization of metal–ferroelectric–metal–insulator–semiconductor structures using ferroelectric Al-doped HfO2 thin films prepared by atomic-layer deposition with different O3 doses

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab2c62 ◽

2019 ◽

Vol 58 (7) ◽

pp. 070907 ◽

Cited By ~ 3

Author(s):

So-Yeong Na ◽

So-Jung Yoon ◽

Seung-Youl Kang ◽

Seung-Eon Moon ◽

Sung-Min Yoon

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Layer Deposition

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Dynamic C-V and G-V characteristics of metal-insulator-semiconductor capacitor with Au nanocrystals and high-K tunneling layer

2007 International Semiconductor Device Research Symposium ◽

10.1109/isdrs.2007.4422495 ◽

2007 ◽

Author(s):

K. H. Chiang ◽

H. C. Wu ◽

P. S. Chen ◽

C. H. Kuan ◽

C. S. Tsai

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

High K

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