scholarly journals Nanometer sized Ni-dot/Ag/Pt structure for high reflectance of p-type contact metal in InGaN light emitting diodes

2012 ◽  
Vol 100 (6) ◽  
pp. 061113 ◽  
Author(s):  
Kyu Sang Kim ◽  
Myoung Gyun Suh ◽  
S. N. Cho
Keyword(s):  
Light Emitting Diodes ◽  
Light Emitting ◽  
Type Contact ◽  
P Type ◽  
Contact Metal ◽  
High Reflectance

Low Resistance and High Reflectance Pt/Rh Contacts to p-Type GaN for GaN-Based Flip Chip Light-Emitting Diodes

2005 ◽  
Vol 152 (1) ◽  
pp. G92 ◽  
Author(s):  
Jae-Ryoung Lee ◽  
Suk-In Na ◽  
Jin-Hee Jeong ◽  
Seung-Nam Lee ◽  
Ja-Soon Jang ◽  
...  
Keyword(s):  
Flip Chip ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Low Resistance ◽  
P Type ◽  
High Reflectance

High-Reflectance and Thermally Stable AgCu Alloy p-Type Reflectors for GaN-Based Light-Emitting Diodes

2007 ◽  
Vol 19 (5) ◽  
pp. 336-338 ◽  
Author(s):  
Hyunsoo Kim ◽  
Kwang Hyeon Baik ◽  
Jaehee Cho ◽  
Jeong Wook Lee ◽  
Sukho Yoon ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Thermally Stable ◽  
Light Emitting ◽  
P Type ◽  
High Reflectance

Enhanced emission from mid-infrared AlInSb light-emitting diodes with p-type contact grid geometry

2015 ◽  
Vol 117 (6) ◽  
pp. 063101 ◽  
Author(s):  
Laura Meriggi ◽  
Matthew J. Steer ◽  
Ying Ding ◽  
Iain G. Thayne ◽  
Calum MacGregor ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Mid Infrared ◽  
Light Emitting ◽  
Type Contact ◽  
P Type

Molecular beam epitaxy of p-type ZnSTe:N and p-n-junction light emitting diodes

2014 ◽  
Vol 11 (7-8) ◽  
pp. 1282-1285 ◽  
Author(s):  
Kunio Ichino ◽  
Takahiro Kojima ◽  
Shunsuke Obata ◽  
Takuma Kuroyanagi ◽  
Kenta Kimata ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
P Type

Ultraviolet light-emitting diodes with polarization-doped p-type layer

2016 ◽  
Vol 97 ◽  
pp. 353-357 ◽  
Author(s):  
Wenxiao Hu ◽  
Ping Qin ◽  
Weidong Song ◽  
Chongzhen Zhang ◽  
Rupeng Wang ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Type Layer ◽  
P Type ◽  
Ultraviolet Light Emitting Diodes

Improved positive polaron stability of the p-type host for long lifetime in phosphorescent organic light-emitting diodes

2021 ◽  
Author(s):  
Ji Ae Kang ◽  
Jun Seop Lim ◽  
Jun Yeob Lee
Keyword(s):  
Light Emitting Diodes ◽  
Oxidation Stability ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Type Host ◽  
Organic Light ◽  
Long Lifetime ◽  
Device Lifetime ◽  
P Type ◽  
Polaron Stability

Long lifetime is one of requirements for commercialization of organic light-emitting diodes (OLEDs). In this paper, we improved the device lifetime of phosphorescent OLEDs by enhancing oxidation stability of the...

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