Time- and temperature-dependent wetting behavior of eutectic SnPb on Cu leadframes plated with Pd/Ni and Au/Pd/Ni thin films

1998 ◽  
Vol 84 (2) ◽  
pp. 770-775 ◽  
Author(s):  
P. G. Kim ◽  
K. N. Tu ◽  
D. C. Abbott
Keyword(s):  
Thin Films ◽  
Temperature Dependent ◽  
Wetting Behavior ◽  
Eutectic Snpb

Interfacial reaction and wetting behavior in eutectic SnPb solder on Ni/Ti thin films and Ni foils

1999 ◽  
Vol 86 (12) ◽  
pp. 6746-6751 ◽  
Author(s):  
P. G. Kim ◽  
J. W. Jang ◽  
T. Y. Lee ◽  
K. N. Tu
Keyword(s):  
Thin Films ◽  
Interfacial Reaction ◽  
Wetting Behavior ◽  
Snpb Solder ◽  
Eutectic Snpb

In situ scanning electron microscopy study of eutectic SnPb and pure Sn wetting on Au/Cu/Cr multilayered thin films

1999 ◽  
Vol 14 (3) ◽  
pp. 745-749 ◽  
Author(s):  
D. W. Zheng ◽  
Weijia Wen ◽  
K. N. Tu ◽  
P. A. Totta
Keyword(s):  
Thin Films ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Wetting Front ◽  
Wetting Behavior ◽  
Soldering Flux ◽  
Pure Sn ◽  
Eutectic Snpb ◽  
Scanning Electron

Wetting behavior of eutectic SnPb and pure Sn on Au(500 Å)/Cu(1 μm)/Cr(800 Å) layered thin films were monitored in situ in a ramping temperature profile using a scanning electron microscope (SEM) with a vacuum of 10−5–10−6 Torr. We found that the wetting behavior of these two solders in SEM was dramatically different from their behavior in RMA soldering flux; a smaller wetting angle and rough wetting front morphology were observed. Very surprisingly, no dewetting could be observed inside the SEM chamber, yet dewetting happened to the same sample when it was removed from the SEM and immersed in RMA soldering flux. We estimate the interfacial energy between liquid Sn and solid Cr and assume the reduction of surface and interfacial energies caused by possible oxidation of Cr and liquid Sn surface in the SEM in order to explain the above-mentioned wetting and dewetting behaviors.

scholarly journals Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Indium Tin Oxide ◽  
Seed Layer ◽  
Room Temperature ◽  
Low Cost ◽  
Temperature Dependent ◽  
Temperature Heat ◽  
Electrochemically Deposited

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.

Extraction of the Coefficient of Thermal Expansion of Thin Films from Buckled Membranes

1998 ◽  
Vol 546 ◽  
Author(s):  
V. Ziebartl ◽  
O. Paul ◽  
H. Baltes
Keyword(s):  
Thin Films ◽  
Finite Element ◽  
Thermal Expansion ◽  
Silicon Nitride ◽  
Excellent Agreement ◽  
Energy Minimization ◽  
Coefficient Of Thermal Expansion ◽  
Temperature Dependent ◽  
Minimization Method ◽  
Energy Minimization Method

AbstractWe report a new method to measure the temperature-dependent coefficient of thermal expansion α(T) of thin films. The method exploits the temperature dependent buckling of clamped square plates. This buckling was investigated numerically using an energy minimization method and finite element simulations. Both approaches show excellent agreement even far away from simple critical buckling. The numerical results were used to extract Cα(T) = α0+α1(T−T0 ) of PECVD silicon nitride between 20° and 140°C with α0 = (1.803±0.006)×10−6°C−1, α1 = (7.5±0.5)×10−9 °C−2, and T0 = 25°C.

scholarly journals Temperature-dependent dynamic moduli of Parylene-C columnar microfibrous thin films

2016 ◽  
Vol 53 ◽  
pp. 89-97 ◽  
Author(s):  
Chandraprakash Chindam ◽  
Nicole R. Brown ◽  
Akhlesh Lakhtakia ◽  
Osama O. Awadelkarim ◽  
Wasim Orfali
Keyword(s):  
Thin Films ◽  
Temperature Dependent ◽  
Dynamic Moduli ◽  
Parylene C

Temperature dependent structural, luminescent and XPS studies of CdO:Ga thin films deposited by spray pyrolysis

2010 ◽  
Vol 506 (2) ◽  
pp. 794-799 ◽  
Author(s):  
A.V. Moholkar ◽  
G.L. Agawane ◽  
Kyu-Ung Sim ◽  
Ye-bin Kwon ◽  
Doo Sun Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Temperature Dependent
Sign in / Sign up

Export Citation Format

Share Document