Interfacial reaction and wetting behavior in eutectic SnPb solder on Ni/Ti thin films and Ni foils

1999 ◽  
Vol 86 (12) ◽  
pp. 6746-6751 ◽  
Author(s):  
P. G. Kim ◽  
J. W. Jang ◽  
T. Y. Lee ◽  
K. N. Tu
Keyword(s):  
Thin Films ◽  
Interfacial Reaction ◽  
Wetting Behavior ◽  
Snpb Solder ◽  
Eutectic Snpb

In situ scanning electron microscopy study of eutectic SnPb and pure Sn wetting on Au/Cu/Cr multilayered thin films

1999 ◽  
Vol 14 (3) ◽  
pp. 745-749 ◽  
Author(s):  
D. W. Zheng ◽  
Weijia Wen ◽  
K. N. Tu ◽  
P. A. Totta
Keyword(s):  
Thin Films ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Wetting Front ◽  
Wetting Behavior ◽  
Soldering Flux ◽  
Pure Sn ◽  
Eutectic Snpb ◽  
Scanning Electron

Wetting behavior of eutectic SnPb and pure Sn on Au(500 Å)/Cu(1 μm)/Cr(800 Å) layered thin films were monitored in situ in a ramping temperature profile using a scanning electron microscope (SEM) with a vacuum of 10−5–10−6 Torr. We found that the wetting behavior of these two solders in SEM was dramatically different from their behavior in RMA soldering flux; a smaller wetting angle and rough wetting front morphology were observed. Very surprisingly, no dewetting could be observed inside the SEM chamber, yet dewetting happened to the same sample when it was removed from the SEM and immersed in RMA soldering flux. We estimate the interfacial energy between liquid Sn and solid Cr and assume the reduction of surface and interfacial energies caused by possible oxidation of Cr and liquid Sn surface in the SEM in order to explain the above-mentioned wetting and dewetting behaviors.

Microstructure evolution in Cu pillar/eutectic SnPb solder system during isothermal annealing

2009 ◽  
Vol 15 (5) ◽  
pp. 815-818 ◽  
Author(s):  
Byoung-Joon Kim ◽  
Gi-Tae Lim ◽  
Jaedong Kim ◽  
Kiwook Lee ◽  
Young-Bae Park ◽  
...  
Keyword(s):  
Microstructure Evolution ◽  
Isothermal Annealing ◽  
Cu Pillar ◽  
Snpb Solder ◽  
Eutectic Snpb

scholarly journals Interfacial reaction in the growth of epitaxial SrTiO3 thin films on (001) Si substrates

2005 ◽  
Vol 97 (10) ◽  
pp. 104921 ◽  
Author(s):  
J. Q. He ◽  
C. L. Jia ◽  
V. Vaithyanathan ◽  
D. G. Schlom ◽  
J. Schubert ◽  
...  
Keyword(s):  
Thin Films ◽  
Interfacial Reaction ◽  
Si Substrates

Interfacial Microstructure Evolution Between Eutectic SnAgCu Solder and Al/Ni(V)/Cu Thin Films

2002 ◽  
Vol 17 (7) ◽  
pp. 1612-1621 ◽  
Author(s):  
M. Li ◽  
F. Zhang ◽  
W. T. Chen ◽  
K. Zeng ◽  
K. N. Tu ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Diagram ◽  
Solid State ◽  
Brittle Failure ◽  
Ternary Phase ◽  
Interfacial Microstructure ◽  
Snagcu Solder ◽  
Ball Shear ◽  
Aging Study ◽  
Eutectic Snpb

The evolution of interfacial microstructure of eutectic SnAgCu and SnPb solders on Al/Ni(V)/Cu thin films was investigated after various heat treatments. In the eutectic SnPb system, the Ni(V) layer was well protected after 20 reflow cycles at 220 °C. In the SnAgCu solder system, after 5 reflow cycles at 260 °C, the (Cu,Ni)6Sn5 ternary phase formed and Sn was detected in the Ni(V) layer. After 20 reflow cycles, the Ni(V) layer disappeared and spalling of the (Cu,Ni)6Sn5 was observed, which explains the transition to brittle failure mode after ball shear testing. The different interfacial reactions that occurred in the molten SnAgCu and SnPb systems were explained in terms of different solubilities of Cu in the two systems. The dissolution and formation of the (Cu,Ni)6Sn5phase were discussed on the basis of a Sn–Ni–Cu phase diagram. In the solid-state aging study of the SnAgCu samples annealed at 150 °C for up to 1000 h, the Ni(V) layer was intact and the intermetallic compound formed was Cu6Sn5 and not (Cu,Ni)6Sn5, which is the same as was observed for the eutectic SnPb system.

Dominant Migration Element in Electrochemical Migration of Eutectic SnPb Solder Alloy

2006 ◽  
Author(s):  
Shin-Bok Lee ◽  
Ja-Young Jung ◽  
Young-Ran Yoo ◽  
Young-Bae Park ◽  
Young-Sik Kim ◽  
...  
Keyword(s):  
Solder Alloy ◽  
Electrochemical Migration ◽  
Snpb Solder ◽  
Eutectic Snpb

Interfacial reaction in bimetallic Sn/Cu thin films

1980 ◽  
Vol 70 (1) ◽  
pp. 153-161 ◽  
Author(s):  
K. Fujiwara ◽  
M. Ohtani ◽  
T. Isu ◽  
S. Nango ◽  
R. Kawanaka ◽  
...  
Keyword(s):  
Thin Films ◽  
Interfacial Reaction

scholarly journals Effect of Mixed Rare Earths on the Wetting Behavior and Interfacial Reaction between Sn-0.70Cu-0.05Ni Solder and Amorphous Fe84.3Si0.3B5.4 Alloy

2018 ◽  
Vol 206 ◽  
pp. 03005
Author(s):  
Bin Hou ◽  
Fengmei Liu ◽  
Hongqin Wang ◽  
Yupeng Zhang ◽  
Jianglong Yi ◽  
...  
Keyword(s):  
Intermetallic Compound ◽  
Melting Temperature ◽  
Solder Alloy ◽  
Interfacial Reaction ◽  
Rare Earths ◽  
Wetting Behavior ◽  
Amorphous Substrate ◽  
Continuous State ◽  
Amorphous Substrates ◽  
Limited Change

In order to explore the effect of addition of mixed rare earths (MRE) on the wetting behavior and interfacial reaction between Sn-0.70Cu-0.05Ni solder and amorphous Fe84.3Si10.3B5.4 alloy, 0.25 wt.% percentage of the MRE, which are mainly elements La and Ce, were added into the solder. Results show it can refine the microstructure of the solder alloy, and there is limited change of melting temperature with the addition of MRE in the solder. The wettability of the solder on amorphous substrate is improved by adding 0.25 wt.% percentage of the MRE into Sn-0.70Cu-0.05Ni solder. Moreover, research results indicate that, with the increase of wetting temperature, the final equilibrium wetting angles of Sn-0.70Cu-0.05Ni and Sn-0.70Cu-0.05Ni-0.25MRE on amorphous substrate decrease gradually, indicating the better wettability at the higher wetting temperature. In addition, with the increase of temperature, the distribution of intermetallic compound (IMC) FeSn2 formed at the interface between the two solders and amorphous substrate is changed from discontinuous state to continuous state. The thickness of the interfacial IMC layer between solder and amorphous substrates reduced with the addition of MRE, indicating that the presence of 0.25 wt.% percentage of the MRE is effective in suppressing the growth of IMC layer.

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