Pulsed plasma polymerization of pentafluorostyrene: Synthesis of low dielectric constant films

1998 ◽  
Vol 84 (1) ◽  
pp. 439-444 ◽  
Author(s):  
Licheng M. Han ◽  
Richard B. Timmons ◽  
Wei W. Lee ◽  
Yuanye Chen ◽  
Zhibing Hu
Keyword(s):  
Dielectric Constant ◽  
Plasma Polymerization ◽  
Low Dielectric Constant ◽  
Pulsed Plasma ◽  
Low Dielectric ◽  
Pulsed Plasma Polymerization

Pulsed Plasma Synthesis of Low Dielectric Constant Materials

1998 ◽  
Vol 511 ◽  
Author(s):  
Licheng M. Han ◽  
Richard B. Timmons ◽  
Wei W. Lee
Keyword(s):  
Thermal Stability ◽  
Dielectric Constant ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Plasma Synthesis ◽  
Pulsed Plasma ◽  
Plasma Polymers ◽  
Low Dielectric ◽  
Duty Cycles ◽  
Low Dielectric Constant Materials

ABSTRACTThe utility of a variable duty cycle, pulsed plasma polymerization technique to produce low dielectric constant materials (k < 2.3) is described. The molecular compositions (and thus the dielectric constants) of the plasma polymers are controllable via changes in the plasma duty cycles employed during synthesis, all other reaction variables being held constant. In the present study, this compositional controllability under pulsed conditions is illustrated with two fluoroaromatic monomers. The dielectric constants of the films decrease as the plasma duty cycles employed during polymerization are decreased. Although the as deposited films exhibit relatively poor thermal stability, it was discovered that post-plasma annealing of the films, particularly at 400 °C under N2, provides dramatic improvements in the thermal stability of these materials. Most importantly, this enhanced thermal stability is achieved with relatively minor changes in the dielectric properties of these materials. In fact, synthesis of high thermal stability films having k < 2.0 is demonstrated in this work using the perfluoroaromatic monomer perfluoroallyl benzene.

Characterization of low dielectric constant polyaniline thin film synthesized by ac plasma polymerization technique

2002 ◽  
Vol 35 (3) ◽  
pp. 240-245 ◽  
Author(s):  
C Joseph Mathai ◽  
S Saravanan ◽  
M R Anantharaman ◽  
S Venkitachalam ◽  
S Jayalekshmi
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Plasma Polymerization ◽  
Low Dielectric Constant ◽  
Low Dielectric

Fluorinated Amorphous Carbon as a Low-Dielectric-Constant Interlayer Dielectric

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 55-58 ◽  
Author(s):  
Kazuhiko Endo
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Plasma Polymerization ◽  
Chemical Vapor ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Source Materials

Low-k organic polymers such as polytetrafluoroethylene (PTFE) are promising materials for use as interlayer dielectrics (ILD) because their dielectric constants are generally lower than those of inorganic materials. However poor adhesion with Si substrates, poor thermal stability, and production difficulties have hindered their use in microelectronics.On the other hand, plasma-enhanced chemical vapor deposition (PECVD) of polymer films (plasma polymerization) has many advantages that help to overcome these problems. Plasma-enhanced chemical vapor deposition uses a glow discharge to create activated species such as radicals and ions from the original monomer, and the polymer films are deposited through various gas-phase and surface reactions of these active species, including ablation of the deposited film. No water is generated during plasma polymerization, and the influence of a solvent can be ignored. Also a layered structure that promotes adhesion can be easily fabricated by changing the source compounds.Recently the use of fluorinated amorphous carbon thin films (a-C:F) as new low-dielectric-constant interlayer dielectrics has been proposed. These thin films have an amorphous C–C cross-linked structure (including sp3 and sp2 bonded carbon) and have the same C–F bonds found in PTFE. The strong C–F bonds decrease the dielectric constant, and the C–C crosslinked structure maintains the film's thermal stability. The a-C:F film can be deposited from fluorocarbon source materials using PECVD. Typically fluorocarbons such as CF4, C2F6, C4F8, and their hydrogen mixtures are used as source materials. First the a-C:F films for low-k ILD, with a dielectric constant of 2.1, were deposited from CH4 + CF4 mixtures by using parallel-plate PECVD.

scholarly journals Characterization of functionalized coatings prepared from pulsed plasma polymerization

2021 ◽  
pp. 124621
Author(s):  
Marisol Ji ◽  
Andrea Jagodar ◽  
Eva Kovacevic ◽  
Lazhar Benyahia ◽  
Fabienne Poncin-Epaillard
Keyword(s):  
Plasma Polymerization ◽  
Pulsed Plasma ◽  
Pulsed Plasma Polymerization ◽  
Functionalized Coatings
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