scholarly journals Anomalous electron transport in back-gated field-effect transistors with TiTe2 semimetal thin-film channels

2012 ◽  
Vol 100 (4) ◽  
pp. 043109 ◽  
Author(s):  
J. Khan ◽  
C. M. Nolen ◽  
D. Teweldebrhan ◽  
D. Wickramaratne ◽  
R. K. Lake ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Transport ◽  
Field Effect ◽  
Field Effect Transistors

scholarly journals Effects of PNDIT2 end groups on aggregation, thin film structure, alignment and electron transport in field-effect transistors

2016 ◽  
Vol 4 (43) ◽  
pp. 10371-10380 ◽  
Author(s):  
Rukiya Matsidik ◽  
Alessandro Luzio ◽  
Sophie Hameury ◽  
Hartmut Komber ◽  
Christopher R. McNeill ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Film Structure ◽  
Structure Alignment ◽  
Thin Film Structure ◽  
Group Control ◽  
End Groups ◽  
End Group

End group control: PNDIT2 with OH and tolyl chain termini are made and comparatively investigated.

scholarly journals Electron transport of perovskite oxide BaSnO3 on (110) DyScO3 substrate with channel-recess for ferroelectric field effect transistors

2021 ◽  
Vol 118 (4) ◽  
pp. 042105
Author(s):  
Junao Cheng ◽  
Hao Yang ◽  
Nicholas G. Combs ◽  
Wangzhou Wu ◽  
Honggyu Kim ◽  
...  
Keyword(s):  
Electron Transport ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Perovskite Oxide

scholarly journals DNA adsorption measured with ultra-thin film organic field effect transistors

2009 ◽  
Vol 24 (9) ◽  
pp. 2935-2938 ◽  
Author(s):  
P. Stoliar ◽  
E. Bystrenova ◽  
S.D. Quiroga ◽  
P. Annibale ◽  
M. Facchini ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Dna Adsorption ◽  
Ultra Thin Film

High-Performance, Stable Organic Thin-Film Field-Effect Transistors Based on Bis-5‘-alkylthiophen-2‘-yl-2,6-anthracene Semiconductors

2005 ◽  
Vol 127 (8) ◽  
pp. 2406-2407 ◽  
Author(s):  
Hong Meng ◽  
Fangping Sun ◽  
Marc B. Goldfinger ◽  
Gary D. Jaycox ◽  
Zhigang Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Thin Film

Azafullerene (C59N)2 thin-film field-effect transistors

2004 ◽  
Vol 84 (12) ◽  
pp. 2154-2156 ◽  
Author(s):  
Ryotaro Kumashiro ◽  
Katsumi Tanigaki ◽  
Hirotaka Ohashi ◽  
Nikos Tagmatarchis ◽  
Haruhito Kato ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors

scholarly journals Transparent ZnO Thin-Film Deposition by Spray Pyrolysis for High-Performance Metal-Oxide Field-Effect Transistors

Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3423 ◽  
Author(s):  
Junhee Cho ◽  
Seongkwon Hwang ◽  
Doo-Hyun Ko ◽  
Seungjun Chung
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Spray Pyrolysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Spray Pyrolysis Technique ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Zno Films ◽  
Process Conditions

Solution-based metal oxide semiconductors (MOSs) have emerged, with their potential for low-cost and low-temperature processability preserving their intrinsic properties of high optical transparency and high carrier mobility. In particular, MOS field-effect transistors (FETs) using the spray pyrolysis technique have drawn huge attention with the electrical performances compatible with those of vacuum-based FETs. However, further intensive investigations are still desirable, associated with the processing optimization and operational instabilities when compared to other methodologies for depositing thin-film semiconductors. Here, we demonstrate high-performing transparent ZnO FETs using the spray pyrolysis technique, exhibiting a field-effect mobility of ~14.7 cm2 V−1 s−1, an on/off ratio of ~109, and an SS of ~0.49 V/decade. We examine the optical and electrical characteristics of the prepared ZnO films formed by spray pyrolysis via various analysis techniques. The influence of spray process conditions was also studied for realizing high quality ZnO films. Furthermore, we measure and analyze time dependence of the threshold voltage (Vth) shifts and their recovery behaviors under prolonged positive and negative gate bias, which were expected to be attributed to defect creation and charge trapping at or near the interface between channel and insulator, respectively.

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