Azafullerene (C59N)2 thin-film field-effect transistors

2004 ◽  
Vol 84 (12) ◽  
pp. 2154-2156 ◽  
Author(s):  
Ryotaro Kumashiro ◽  
Katsumi Tanigaki ◽  
Hirotaka Ohashi ◽  
Nikos Tagmatarchis ◽  
Haruhito Kato ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors

scholarly journals DNA adsorption measured with ultra-thin film organic field effect transistors

2009 ◽  
Vol 24 (9) ◽  
pp. 2935-2938 ◽  
Author(s):  
P. Stoliar ◽  
E. Bystrenova ◽  
S.D. Quiroga ◽  
P. Annibale ◽  
M. Facchini ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Dna Adsorption ◽  
Ultra Thin Film

High-Performance, Stable Organic Thin-Film Field-Effect Transistors Based on Bis-5‘-alkylthiophen-2‘-yl-2,6-anthracene Semiconductors

2005 ◽  
Vol 127 (8) ◽  
pp. 2406-2407 ◽  
Author(s):  
Hong Meng ◽  
Fangping Sun ◽  
Marc B. Goldfinger ◽  
Gary D. Jaycox ◽  
Zhigang Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Thin Film

scholarly journals Transparent ZnO Thin-Film Deposition by Spray Pyrolysis for High-Performance Metal-Oxide Field-Effect Transistors

Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3423 ◽  
Author(s):  
Junhee Cho ◽  
Seongkwon Hwang ◽  
Doo-Hyun Ko ◽  
Seungjun Chung
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Spray Pyrolysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Spray Pyrolysis Technique ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Zno Films ◽  
Process Conditions

Solution-based metal oxide semiconductors (MOSs) have emerged, with their potential for low-cost and low-temperature processability preserving their intrinsic properties of high optical transparency and high carrier mobility. In particular, MOS field-effect transistors (FETs) using the spray pyrolysis technique have drawn huge attention with the electrical performances compatible with those of vacuum-based FETs. However, further intensive investigations are still desirable, associated with the processing optimization and operational instabilities when compared to other methodologies for depositing thin-film semiconductors. Here, we demonstrate high-performing transparent ZnO FETs using the spray pyrolysis technique, exhibiting a field-effect mobility of ~14.7 cm2 V−1 s−1, an on/off ratio of ~109, and an SS of ~0.49 V/decade. We examine the optical and electrical characteristics of the prepared ZnO films formed by spray pyrolysis via various analysis techniques. The influence of spray process conditions was also studied for realizing high quality ZnO films. Furthermore, we measure and analyze time dependence of the threshold voltage (Vth) shifts and their recovery behaviors under prolonged positive and negative gate bias, which were expected to be attributed to defect creation and charge trapping at or near the interface between channel and insulator, respectively.

Fabrication of MISFET exhibiting normally-off characteristics using a single-crystalline InGaO3(ZnO)5 thin film

2002 ◽  
Vol 747 ◽  
Author(s):  
K. Nomura ◽  
H. Ohta ◽  
K. Ueda ◽  
T. Kamiya ◽  
M. Hirano ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Defect Density ◽  
Field Effect Transistors ◽  
Solid Phase ◽  
Oxide Semiconductor ◽  
Single Crystalline ◽  
Transparent Oxide ◽  
Improved Performance ◽  
Transparent Oxide Semiconductors

ABSTRACTTransparent metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated using a single-crystalline thin film of an n-type transparent oxide semiconductor, a homologous compound InGaO3(ZnO)5, grown by a reactive solid phase epitaxy method. The transparent MISFET exhibited good performances with “normally-off characteristics”, “an on/off current ratio as large as 105” and “insensitivity to visible light”. Field-effect mobility was about 2 cm2(Vs)-1, which is larger than those reported previously for MISFETs fabricated in transparent oxide semiconductors. These improved performance is thought to result from the low defect density and intrinsic-level carrier concentration of the single-crystalline InGaO3(ZnO)5 film.

High-performance metal-semiconductor field effect transistors from thin-film polycrystalline diamond

1998 ◽  
Vol 7 (2-5) ◽  
pp. 565-568 ◽  
Author(s):  
H.J. Looi ◽  
L.Y.S. Pang ◽  
Y. Wang ◽  
M.D. Whitfield ◽  
R.B. Jackman
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Polycrystalline Diamond
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