scholarly journals Thin Film FETs: Exploring the Performance Limit of Carbon Nanotube Network Film Field‐Effect Transistors for Digital Integrated Circuit Applications (Adv. Funct. Mater. 16/2019)

2019 ◽  
Vol 29 (16) ◽  
pp. 1970106
Author(s):  
Chenyi Zhao ◽  
Donglai Zhong ◽  
Jie Han ◽  
Lijun Liu ◽  
Zhiyong Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Performance Limit ◽  
Carbon Nanotube Network ◽  
Digital Integrated Circuit

scholarly journals Physical and Electrical Characteristics of Carbon Nanotube Network Field-Effect Transistors Synthesized by Alcohol Catalytic Chemical Vapor Deposition

2011 ◽  
Vol 2011 ◽  
pp. 1-7 ◽  
Author(s):  
Chin-Lung Cheng ◽  
Chien-Wei Liu ◽  
Bau-Tong Dai ◽  
Ming-Yen Lee
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Drain Current ◽  
Electrical Characteristics ◽  
Carbon Nanotube Network ◽  
Carbon Nanotube Networks

Carbon nanotubes (CNTs) have been explored in nanoelectronics to realize desirable device performances. Thus, carbon nanotube network field-effect transistors (CNTNFETs) have been developed directly by means of alcohol catalytic chemical vapor deposition (ACCVD) method using Co-Mo catalysts in this work. Various treated temperatures, growth time, and Co/Mo catalysts were employed to explore various surface morphologies of carbon nanotube networks (CNTNs) formed on the SiO2/n-type Si(100) stacked substrate. Experimental results show that most semiconducting single-walled carbon nanotube networks with 5–7 nm in diameter and low disorder-induced mode (D-band) were grown. A bipolar property of CNTNFETs synthesized by ACCVD and using HfO2as top-gate dielectric was demonstrated. Various electrical characteristics, including drain current versus drain voltage(Id-Vd), drain current versus gate voltage(Id-Vg), mobility, subthreshold slope (SS), and transconductance(Gm), were obtained.

Performance Comparison of Interdigitated Thin-Film Field-Effect Transistors Using Different Purity Semiconducting Carbon Nanotubes

2011 ◽  
Vol 181-182 ◽  
pp. 343-348
Author(s):  
K.C. Narasimhamurthy ◽  
Roy Paily Palathinkal
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Hafnium Oxide ◽  
Field Effect ◽  
Dielectric Material ◽  
Field Effect Transistors ◽  
Gate Oxide ◽  
Channel Length ◽  
Performance Comparison ◽  
Saturation Region

In this paper, we present the fabrication and characterization of semiconducting carbon nanotube thin-film field-effect transistors (SN-TFTs). High-k dielectric material, hafnium-oxide (HfOX) is used as the gate-oxide of the device. A Thin-film of semi-conducting single walled carbon nanotube (SWCNT) is deposited on the amino-silane modified HfOX surface. Two types of SN-TFTs with interdigitated source and drain contacts are fabricated using 90% and 95% purity of semiconducting SWCNTs (s-SWCNT), have exhibited a p-type behavior with a distinct linear and saturation region of operation. For 20 µm channel length SN-TFT with 95% pure s-SWCNTs has a peak on-off current ratio of 3.5×104 and exhibited a transconductance of 950 µS. The SN-TFT fabricated with HfOX gate oxide has shown a steep sub-threshold slope of 750 mV/decade and threshold voltage of -0.7 V. The SN-TFT of channel length 50 µm has exhibited a maximum mobility of 26.9 cm2/V•s.

Carbon Nanotube and Graphene Hybrid Thin Film for Transparent Electrodes and Field Effect Transistors

2014 ◽  
Vol 26 (25) ◽  
pp. 4247-4252 ◽  
Author(s):  
Sung Ho Kim ◽  
Wooseok Song ◽  
Min Wook Jung ◽  
Min-A Kang ◽  
Kiwoong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Transparent Electrodes ◽  
Hybrid Thin Film

Self-gating effects in carbon nanotube network based liquid gate field effect transistors

2008 ◽  
Vol 93 (24) ◽  
pp. 243115 ◽  
Author(s):  
Dong Wan Kim ◽  
Gyu Sik Choe ◽  
Sung Min Seo ◽  
Jun Ho Cheon ◽  
Hansuk Kim ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Carbon Nanotube Network

Comprehensive insights into effect of van der Waals contact on carbon nanotube network field-effect transistors

2019 ◽  
Vol 115 (17) ◽  
pp. 173503 ◽  
Author(s):  
Hao Huang ◽  
Xingqiang Liu ◽  
Fang Liu ◽  
Chuansheng Liu ◽  
Xuelei Liang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Carbon Nanotube Network
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