GaAs microcrystal growth on semiconductor surfaces by low energy focused ion beam

1998 ◽  
Vol 16 (4) ◽  
pp. 2538 ◽  
Author(s):  
Toyohiro Chikyow
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Semiconductor Surfaces

Doping Study on Maskless Selective Direct Growth of GaAs Using Low-Energy Focused Ion Beam

2004 ◽  
Vol 43 (No. 6A) ◽  
pp. L716-L718 ◽  
Author(s):  
Tomokazu Nishiyama ◽  
Eum-Mi Kim ◽  
Kazutoshi Numata ◽  
Kangsa Pak
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Direct Growth

Low energy focused ion beam milling of silicon and germanium nanostructures

2011 ◽  
Vol 22 (10) ◽  
pp. 105304 ◽  
Author(s):  
Miroslav Kolíbal ◽  
Tomáš Matlocha ◽  
Tomáš Vystavěl ◽  
Tomáš Šikola
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Silicon And Germanium ◽  
Focused Ion Beam Milling

Low Energy Focused Ion Beam Processing

1992 ◽  
Vol 279 ◽  
Author(s):  
Kenji Gamo
Keyword(s):  
Focused Ion Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Etching Rate ◽  
High Mobility ◽  
Low Energy ◽  
High Electron ◽  
Optimization Of Process Parameters ◽  
High Etching Rate

ABSTRACTFocused ion beam (FIB) techniques have many advantages which stem from being maskless and have attracted much interest for various applications includingin situprocessing. However, reduction of damage and improvement of throughput are problems awaiting solution. For reduction of damage, low energy FIB is promising and for improvement of throughput, understanding of the basic processes and optimization of process parameters based on this understanding is crucial. This paper discusses characteristics of low energy FIB system, ion beam assisted etching and ion implantation, and effect of damage with putting emphasize onin situfabrication. Low energy (0.05–25keV) FIB system being developed forms -lOOnm diameter ion beams and is connected with molecular beam epitaxy system. Many results indicate that low damage, maskless ion beam assisted etching is feasible using low energy beams. Recently it was also shown that for ion beam assisted etching of GaAs, pulse irradiation yields very high etching rate of 500/ion. This indicates that the optimization of the relative ratio of ion irradiation and reactant gas supply as important to achieve high etching rate. Low energy FIB is also important for selective doping for high electron mobility heterostructures of GaAs/GaAlAs, because high mobility is significantly degraded by a slight damage.

Localization of Electrically Active Extended Defects in GaN Using a DualBeam FIB

2018 ◽  
Author(s):  
T. Nshanian ◽  
B. Tracy ◽  
H. Ho
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Piezoelectric Materials ◽  
Ion Beam ◽  
Low Energy ◽  
Threading Dislocations ◽  
Extended Defects ◽  
Electrical Fields ◽  
Low Energy Ions ◽  
Piezoelectric Charge

Abstract The Dual Focused Ion Beam (DFIB has been used to expose electrical fields associated with the charge of electrically active extended defects (ED) – (e.g. threading dislocations - TDs) in GaN structures. The localized electrical fields above electrically active defects in piezoelectric materials are shown to capture sputtered low energy ions, turning them back toward the surface and redepositing them on top of defects (TDs), forming Gallium-rich islands. This “Ga droplet” decorates EDs and significantly simplifies the process of locating EDs for TEM sample preparation and analyses. The size and shape of the Ga islands is correlated with the accumulated piezoelectric charge density at the EDs.

scholarly journals Fabrication of a Newly Developed Low-Energy Focused Ion Beam System and Its Application to the Maskless Selective Deposition on Microarea.

Shinku ◽  
1992 ◽  
Vol 35 (11) ◽  
pp. 899-904 ◽  
Author(s):  
Kangsa PAK ◽  
Tetsuya SHIMOMURA ◽  
Isao SAITOH ◽  
Hiroo YONEZU
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Selective Deposition ◽  
Beam System
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