Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN

1998 ◽  
Vol 83 (11) ◽  
pp. 6148-6160 ◽  
Author(s):  
J. C. Carrano ◽  
T. Li ◽  
P. A. Grudowski ◽  
C. J. Eiting ◽  
R. D. Dupuis ◽  
...  
Keyword(s):  
Single Crystal ◽  
Metal Semiconductor Metal ◽  
Ultraviolet Photodetectors ◽  
Comprehensive Characterization

Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers

1997 ◽  
Vol 70 (15) ◽  
pp. 1992-1994 ◽  
Author(s):  
J. C. Carrano ◽  
P. A. Grudowski ◽  
C. J. Eiting ◽  
R. D. Dupuis ◽  
J. C. Campbell
Keyword(s):  
Single Crystal ◽  
Dark Current ◽  
Epitaxial Layers ◽  
Metal Semiconductor Metal ◽  
Ultraviolet Photodetectors

CHARACTERIZATION OF AN AlGaAs/GaAs METAL-SEMICONDUCTOR-METAL PHOTODETECTOR

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-325-C4-328
Author(s):  
M. ZIRNGIBL ◽  
R. SACHOT ◽  
M. ILEGEMS
Keyword(s):  
Metal Semiconductor Metal

Spectral Investigation on the Growth and Characterization of NLO Crystals of Thiourea Succinic Acid Single Crystal.

2015 ◽  
Vol 2 (2) ◽  
pp. 70-73
Author(s):  
Kannan.P ◽  
Thambidurai.S ◽  
Suresh.N
Keyword(s):  
Single Crystal ◽  
Succinic Acid ◽  
Slow Evaporation Technique ◽  
Absorption Studies ◽  
Dta Analysis ◽  
Evaporation Technique ◽  
Ft Ir ◽  
Ir Spectroscopic ◽  
Thermal Stability Of

Growth of optically transparent single crystals of thiourea succinic acid (TUSA) was grown successfully from aqueous solution by slow evaporation technique. The crystal structure was elucidated using the single crystal XRD. The various functional groups and the modes of vibrations were identified by FT-IR spectroscopic analysis. The optical absorption studies indicate that the optical transparency window is quite wide making its suitable for NLO applications. Thermal stability of the crown crystal carried out by TGA-DTA analysis.

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