Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers

1997 ◽  
Vol 70 (15) ◽  
pp. 1992-1994 ◽  
Author(s):  
J. C. Carrano ◽  
P. A. Grudowski ◽  
C. J. Eiting ◽  
R. D. Dupuis ◽  
J. C. Campbell
2011 ◽  
Vol 109 (2) ◽  
pp. 023114 ◽  
Author(s):  
Yannan Xie ◽  
Huolin Huang ◽  
Weifeng Yang ◽  
Zhengyun Wu

1998 ◽  
Vol 83 (11) ◽  
pp. 6148-6160 ◽  
Author(s):  
J. C. Carrano ◽  
T. Li ◽  
P. A. Grudowski ◽  
C. J. Eiting ◽  
R. D. Dupuis ◽  
...  

2015 ◽  
Vol 23 (13) ◽  
pp. 16967 ◽  
Author(s):  
Jian Kang ◽  
Rui Zhang ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi

2021 ◽  
Author(s):  
Xiangshun Geng ◽  
Qi-Xin Feng ◽  
He Tian ◽  
Weijian Chen ◽  
Xiaoming Wen ◽  
...  

Abstract Super long perovskite microwires (PMWs) are in a great demand in many fields such as low-loss microcables and integrated optical waveguide. Despite decades of research into PMWs, single crystal PMWs with several centimeters long have not been obtained. Here, ultralong (up to 7.6 centimeters) monoclinic crystal structure CH3NH3PbI3·DMF PMWs have been synthesized. The high-quality microwire exhibits long carrier lifetime of 1775.7 ns. The as-prepared free-standing PMWs can be integrated to any arbitrary substrate and 808 nm near-infrared photodetectors have been successfully demonstrated. The fabricated device shows a high light on/off ratio of 1.79×106 and an extremely low dark current of 2.5 fA at 1 V bias. This work provides a strategy for the solution growth of ultralong microwires.


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