Low-temperature photoluminescence study on Er-doped GaP grown by organometallic vapor phase epitaxy

1998 ◽  
Vol 83 (9) ◽  
pp. 4902-4908 ◽  
Author(s):  
Yasufumi Fujiwara ◽  
Anthony P. Curtis ◽  
Gregory E. Stillman ◽  
Naoteru Matsubara ◽  
Yoshikazu Takeda
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Photoluminescence Study ◽  
Er Doped ◽  
Low Temperature Photoluminescence

scholarly journals Low-Temperature Growth of GaAs by Organometallic Vapor Phase Epitaxy Using TEGa and TBAs

2007 ◽  
Vol 56 (9) ◽  
pp. 880-885
Author(s):  
Keiji HIDAKA ◽  
Takashi HIRAMATSU ◽  
Yoshikazu TERAI ◽  
Osamu ERYU ◽  
Yasufumi FUJIWARA
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Temperature Growth ◽  
Low Temperature Growth

Nonradiative processes at low temperature in Er,O-codoped GaAs grown by organometallic vapor phase epitaxy

2008 ◽  
Vol 5 (9) ◽  
pp. 2864-2866
Author(s):  
A. Fujita ◽  
T. Tokuno ◽  
K. Hidaka ◽  
K. Fujii ◽  
K. Tachibana ◽  
...  
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Nonradiative Processes

Low‐temperature organometallic vapor phase epitaxy of InSb using the novel Sb precursor triisopropylantimony

1991 ◽  
Vol 58 (12) ◽  
pp. 1311-1313 ◽  
Author(s):  
G. T. Stauf ◽  
D. K. Gaskill ◽  
N. Bottka ◽  
R. W. Gedridge
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
The Novel

Structural And Optical Characterization Of AlxGa1−xAs Grown At Low Temperatures By Organometallic Vapor Phase Epitaxy

1996 ◽  
Vol 442 ◽  
Author(s):  
A. Wankerl ◽  
D. T. Emerson ◽  
M. J. Cook ◽  
J. R. Shealy
Keyword(s):  
Low Temperature ◽  
Carrier Concentration ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Free Carrier ◽  
Carbon Doping ◽  
Free Carrier Concentration ◽  
Organometallic Vapor Phase Epitaxy ◽  
Hydrogen Passivation ◽  
High Background

AbstractWe report on the low temperature growth of AlxGa1−xAs by conventional Organometallic Vapor Phase Epitaxy OMVPE for a substrate temperature of 500°C and V/III ratios extending to subunity. Optical, structural and electrical qualities are assessed with double crystal X-ray diffraction, Nomarski and atomic force microscopy, 1.6K and 300K photoluminescence, Rutherford backscattering and Hall measurements. Although our low temperature grown films are of good structural and optical quality, they exhibit high background p-doping (carbon) and high levels of hydrogen passivation. A method for extracting the carbon doping levels from lattice contraction measurements is suggested. The dependence of layer composition, free carrier concentration and hydrogen passivation on growth parameters are investigated. Moreover, the effects of post-growth annealing on free carrier concentration, lattice parameter and optical qualities are studied. The influence on the bandgap of bandtail states and compressive strain due to carbon are compared.

EPR measurement on Er-doped InP grown by organometallic vapor phase epitaxy

2000 ◽  
Vol 19 (1) ◽  
pp. 3-7 ◽  
Author(s):  
C. Urakawa ◽  
Y. Nakashima ◽  
H. Ohta ◽  
T. Ito ◽  
Y. Fujiwara ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Er Doped
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