High‐pressure photoluminescence study of ordered Ga0.5In0.5P alloys grown on GaAs by organometallic vapor phase epitaxy

1991 ◽  
Vol 58 (12) ◽  
pp. 1289-1291 ◽  
Author(s):  
Toshihiko Kobayashi ◽  
Rajpal S. Deol
Keyword(s):  
High Pressure ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Photoluminescence Study

Low-temperature photoluminescence study on Er-doped GaP grown by organometallic vapor phase epitaxy

1998 ◽  
Vol 83 (9) ◽  
pp. 4902-4908 ◽  
Author(s):  
Yasufumi Fujiwara ◽  
Anthony P. Curtis ◽  
Gregory E. Stillman ◽  
Naoteru Matsubara ◽  
Yoshikazu Takeda
Keyword(s):  
Low Temperature ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Photoluminescence Study ◽  
Er Doped ◽  
Low Temperature Photoluminescence

Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy

1995 ◽  
Vol 67 (12) ◽  
pp. 1721-1723 ◽  
Author(s):  
W. I. Lee ◽  
T. C. Huang ◽  
J. D. Guo ◽  
M. S. Feng
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Deep Levels ◽  
Organometallic Vapor Phase Epitaxy

Monocrystalline InN Films Grown at High Rate by Organometallic Vapor Phase Epitaxy with Nitrogen Plasma Activation Supported by Gyrotron Radiation

2013 ◽  
Vol 52 (11R) ◽  
pp. 110201 ◽  
Author(s):  
Alexander Vodopyanov ◽  
Yurii Buzynin ◽  
Dmitry Mansfeld ◽  
Oleg Khrykin ◽  
Yurii Drozdov ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Nitrogen Plasma ◽  
Vapor Phase Epitaxy ◽  
High Rate ◽  
Organometallic Vapor Phase Epitaxy ◽  
Plasma Activation
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