Origin of the collapse of tunnel magnetoresistance at high annealing temperature in CoFeB/MgO perpendicular magnetic tunnel junctions

2011 ◽  
Vol 99 (25) ◽  
pp. 252507 ◽  
Author(s):  
H. D. Gan ◽  
H. Sato ◽  
M. Yamanouchi ◽  
S. Ikeda ◽  
K. Miura ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
High Annealing Temperature ◽  
Tunnel Magnetoresistance ◽  
High Annealing

scholarly journals Large Inverse Tunnel Magnetoresistance in Magnetic Tunnel Junctions with an Fe3O4 Electrode

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Vol 15 (3) ◽  
Author(s):  
Shoma Yasui ◽  
Syuta Honda ◽  
Jun Okabayashi ◽  
Takashi Yanase ◽  
Toshihiro Shimada ◽  
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Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Magnetoresistance

scholarly journals Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions

2021 ◽  
Vol 118 (4) ◽  
pp. 042411
Author(s):  
Thomas Scheike ◽  
Qingyi Xiang ◽  
Zhenchao Wen ◽  
Hiroaki Sukegawa ◽  
Tadakatsu Ohkubo ◽  
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Keyword(s):  
Room Temperature ◽  
Tunnel Junctions ◽  
Spin Valve ◽  
Magnetic Tunnel Junctions ◽  
Tunnel Magnetoresistance

Bias voltage effect on tunnel magnetoresistance in fully epitaxial MgO double-barrier magnetic tunnel junctions

2005 ◽  
Vol 86 (8) ◽  
pp. 082501 ◽  
Author(s):  
T. Nozaki ◽  
A. Hirohata ◽  
N. Tezuka ◽  
S. Sugimoto ◽  
K. Inomata
Keyword(s):  
Bias Voltage ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Double Barrier ◽  
Tunnel Magnetoresistance
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