Influence of annealing temperature and thickness of a CoFeB middle layer on the tunnel magnetoresistance of MgO based double barrier magnetic tunnel junctions

2009 ◽  
Vol 105 (1) ◽  
pp. 014510 ◽  
Author(s):  
A. Reinartz ◽  
J. Schmalhorst ◽  
G. Reiss
Keyword(s):  
Annealing Temperature ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Middle Layer ◽  
Double Barrier ◽  
Tunnel Magnetoresistance

Bias voltage effect on tunnel magnetoresistance in fully epitaxial MgO double-barrier magnetic tunnel junctions

2005 ◽  
Vol 86 (8) ◽  
pp. 082501 ◽  
Author(s):  
T. Nozaki ◽  
A. Hirohata ◽  
N. Tezuka ◽  
S. Sugimoto ◽  
K. Inomata
Keyword(s):  
Bias Voltage ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Double Barrier ◽  
Tunnel Magnetoresistance

scholarly journals Annealing of CoFeB/MgO based single and double barrier magnetic tunnel junctions: Tunnel magnetoresistance, bias dependence, and output voltage

2009 ◽  
Vol 105 (3) ◽  
pp. 033916 ◽  
Author(s):  
G. Feng ◽  
Sebastiaan van Dijken ◽  
J. F. Feng ◽  
J. M. D. Coey ◽  
T. Leo ◽  
...  
Keyword(s):  
Output Voltage ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Double Barrier ◽  
Tunnel Magnetoresistance

scholarly journals Oscillatory tunnel magnetoresistance in double barrier magnetic tunnel junctions

2005 ◽  
Vol 72 (5) ◽  
Author(s):  
Zhong-Ming Zeng ◽  
Xiu-Feng Han ◽  
Wen-Shan Zhan ◽  
Yong Wang ◽  
Ze Zhang ◽  
...  
Keyword(s):  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Double Barrier ◽  
Tunnel Magnetoresistance

Asymmetric Voltage Behavior of the Tunnel Magnetoresistance in Double Barrier Magnetic Tunnel Junctions

2012 ◽  
Vol 190 ◽  
pp. 145-148
Author(s):  
A. Useinov ◽  
C. Gooneratne ◽  
J. Kosel
Keyword(s):  
Theoretical Model ◽  
Applied Voltage ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Double Barrier ◽  
Tunnel Magnetoresistance ◽  
Magnetic Layers ◽  
Tunnel Barriers ◽  
In Series ◽  
Left And Right

In this paper, we study the value of the tunnel magnetoresistance (TMR) as a function of the applied voltage in double barrier magnetic tunnel junctions (DMTJs) with the left and right ferromagnetic (FM) layers being pinned and numerically estimate the possible difference of the TMR curves for negative and positive voltages in the homojunctions (equal barriers and electrodes). DMTJs are modeled as two single barrier junctions connected in series with consecutive tunneling (CST). We investigated the asymmetric voltage behavior of the TMR for the CST in the range of a general theoretical model. Significant asymmetries of the experimental curves, which arise due to different annealing regimes, are mostly explained by different heights of the tunnel barriers and asymmetries of spin polarizations in magnetic layers.

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