Diversity of electronic transitions and photoluminescence properties in nanocrystalline Mn/Fe-doped tin dioxide semiconductor films: An effect from oxygen pressure

2011 ◽  
Vol 110 (12) ◽  
pp. 123502 ◽  
Keyword(s):  
Oxygen Pressure ◽  
Tin Dioxide ◽  
Electronic Transitions ◽  
Semiconductor Films ◽  
Photoluminescence Properties

Microstructural and Photoluminescence Properties of Tin Dioxide Modified by Electron Beam Irradiation

2011 ◽  
Vol 11 (11) ◽  
pp. 9709-9713 ◽  
Author(s):  
Juan Du ◽  
Jian Wang ◽  
Zheng Jiao ◽  
Minghong Wu ◽  
C. H. Shek ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Tin Dioxide ◽  
Photoluminescence Properties ◽  
Beam Irradiation

SYNTHESIS AND PHOTOLUMINESCENCE PROPERTIES OF MICRON-ALUMINA

2014 ◽  
Vol 21 (02) ◽  
pp. 1450031
Author(s):  
SHIHUA ZHAO ◽  
ZHENG WANG ◽  
MINGQUAN WANG ◽  
YUTING CUI ◽  
QUANLIN LIU
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electronic Transitions ◽  
Photoluminescence Properties ◽  
X Ray Diffraction ◽  
Preparation Methods ◽  
X Ray ◽  
Transmission Electron ◽  
Xrd Patterns ◽  
Many Particles

Micron-alumina is expected to be of new properties and applications owing to its different morphology structures, which is prepared by the conventional preparation methods. X-ray diffraction (XRD) patterns present that the micron-alumina has poly-crystalline structure. Scanning electron microscopy (SEM) shows that the micron-alumina looks like a bouquet of flowers and its surface is covered with much micron-strips. Transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM) show that the micron-alumina is composed of many particles, which has polycrystalline structure. PL spectra display that emission peak of the micron-alumina centers at 301 nm, which attributes to the F + centers. A schematic drawing for electronic transitions in the excitation and emission processes is proposed.

Gas-sensor properties of composite semiconductor films of substituted perylene and tin dioxide nanoparticles

2010 ◽  
Vol 83 (5) ◽  
pp. 835-840 ◽  
Author(s):  
A. S. Komolov ◽  
N. B. Gerasimova ◽  
E. V. Lazneva ◽  
S. A. Komolov ◽  
I. Z. Buzin
Keyword(s):  
Gas Sensor ◽  
Tin Dioxide ◽  
Semiconductor Films ◽  
Sensor Properties

Temperature dependence of phonon modes, dielectric functions, and interband electronic transitions in Cu2ZnSnS4 semiconductor films

2012 ◽  
Vol 14 (28) ◽  
pp. 9936 ◽  
Author(s):  
Wenwu Li ◽  
Kai Jiang ◽  
Jinzhong Zhang ◽  
Xiangui Chen ◽  
Zhigao Hu ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Electronic Transitions ◽  
Semiconductor Films ◽  
Phonon Modes

Effect of the oxygen pressure on the photoluminescence properties of ZnO thin films by PLD

2007 ◽  
Vol 42 (8) ◽  
pp. 2678-2683 ◽  
Author(s):  
X. M. Fan ◽  
J. S. Lian ◽  
Qing Jiang ◽  
ZuoWan Zhou
Keyword(s):  
Thin Films ◽  
Oxygen Pressure ◽  
Zno Thin Films ◽  
Photoluminescence Properties

Effect of Reaction Time on Surface Nano-Structure of TiN Oxide Nanofilm by Hydrothermal Method

2019 ◽  
Vol 814 ◽  
pp. 58-63
Author(s):  
Chao Yang ◽  
Fang Wang ◽  
Shi Bin Li ◽  
Ting Ting Xia ◽  
Rui Hua Wang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Reaction Time ◽  
Hydrothermal Method ◽  
Tin Dioxide ◽  
Dye Sensitized Solar Cells ◽  
Powder Coating ◽  
Semiconductor Films ◽  
Nano Structure ◽  
Dye Sensitized ◽  
Sensitized Solar Cells

Dye-sensitized solar cells have better development prospects than silicon cells, and the main structural components of nanoporous semiconductor films are particularly important. In this experimental study, we used tin dioxide film and investigated the effect of preparing this film on dye-sensitized solar cells under different conditions. Furthermore, SnO2 powder was prepared through hydrothermal method, and an experiment was conducted through a controlled variable method. The properties of the obtained tin dioxide powder were characterized by SEM, 3D ultradepth microscopy, and XRD. An XRD peak is displayed as tetragonal-phase rutile-type SnO2, and the SEM indicates that the powder grain size is several nanometers. With the increase in reaction time, the film gradually became flat and uniform from only a small amount of powder coating. At the reaction time of 8 days, the integrity and flatness of the film were optimal, and the pore size was uniform. Moreover, the specific surface area was large. In summary, the reaction time of 8 days is suitable for membrane growth.

Role of oxygen pressure on the structural and photoluminescence properties of pulsed laser deposited GeO2 thin films

2021 ◽  
pp. 413466
Author(s):  
Mahendra Singh Rathore ◽  
Arun Vinod ◽  
Rambabu Angalakurthi ◽  
A.P. Pathak ◽  
Santhosh Kumar Thatikonda ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Photoluminescence Properties
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