Spin injection from two-dimensional electron and hole gases in resonant tunneling diodes

2011 ◽  
Vol 99 (23) ◽  
pp. 233507 ◽  
Author(s):  
Y. Galvão Gobato ◽  
H. V. A. Galeti ◽  
L. F. dos Santos ◽  
V. López-Richard ◽  
D. F. Cesar ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Spin Injection ◽  
Resonant Tunneling Diodes ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Tunneling Diodes

Resonant tunneling diodes and transistors with a one‐, two‐, or three‐dimensional electron emitter

1990 ◽  
Vol 68 (9) ◽  
pp. 4634-4646 ◽  
Author(s):  
Philip F. Bagwell ◽  
Tom P. E. Broekaert ◽  
T. P. Orlando ◽  
Clifton G. Fonstad
Keyword(s):  
Resonant Tunneling ◽  
Three Dimensional ◽  
Resonant Tunneling Diodes ◽  
Dimensional Electron ◽  
Electron Emitter ◽  
Tunneling Diodes

scholarly journals Spin injection in n-type resonant tunneling diodes

2012 ◽  
Vol 7 (1) ◽  
pp. 592 ◽  
Author(s):  
Vanessa Orsi Gordo ◽  
Leonilson KS Herval ◽  
Helder VA Galeti ◽  
Yara Gobato ◽  
Maria JSP Brasil ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Spin Injection ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

scholarly journals Voltage- and Light-Controlled Spin Properties of a Two-Dimensional Hole Gas in p-Type GaAs/AlAs Resonant Tunneling Diodes

2018 ◽  
Vol 47 (3) ◽  
pp. 1780-1785
Author(s):  
H. V. A. Galeti ◽  
Y. Galvão Gobato ◽  
M. J. S. P. Brasil ◽  
D. Taylor ◽  
M. Henini
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Two Dimensional ◽  
Tunneling Diodes ◽  
Spin Properties ◽  
P Type

Magneto-optical investigation of two-dimensional gases in n-type resonant tunneling diodes

2011 ◽  
Vol 27 (1) ◽  
pp. 015018 ◽  
Author(s):  
H V A Galeti ◽  
Y Galvão Gobato ◽  
V O Gordo ◽  
L F dos Santos ◽  
M J S P Brasil ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Optical Investigation ◽  
Resonant Tunneling Diodes ◽  
Two Dimensional ◽  
Tunneling Diodes

scholarly journals Hole spin injection from a GaMnAs layer into GaAs–AlAs–InGaAs resonant tunneling diodes

2016 ◽  
Vol 49 (16) ◽  
pp. 165104
Author(s):  
D H Rodrigues ◽  
M J S P Brasil ◽  
M Orlita ◽  
J Kunc ◽  
H V A Galeti ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Spin Injection ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes ◽  
Gamnas Layer

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

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