Resonant tunneling diodes and transistors with a one‐, two‐, or three‐dimensional electron emitter

1990 ◽  
Vol 68 (9) ◽  
pp. 4634-4646 ◽  
Author(s):  
Philip F. Bagwell ◽  
Tom P. E. Broekaert ◽  
T. P. Orlando ◽  
Clifton G. Fonstad
2011 ◽  
Vol 99 (23) ◽  
pp. 233507 ◽  
Author(s):  
Y. Galvão Gobato ◽  
H. V. A. Galeti ◽  
L. F. dos Santos ◽  
V. López-Richard ◽  
D. F. Cesar ◽  
...  

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.


2021 ◽  
Vol 15 (3) ◽  
Author(s):  
Ignacio Ortega-Piwonka ◽  
Oreste Piro ◽  
José Figueiredo ◽  
Bruno Romeira ◽  
Julien Javaloyes

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