The directionality of quantum confinement on strain-induced quantum-wire lasers

S. T. Chou; D. E. Wohlert; K. Y. Cheng; K. C. Hsieh

doi:10.1063/1.366558

Two-dimensional quantum confinement in multiple quantum wire lasers grown by OMCVD on V-grooved substrates

Surface Science ◽

10.1016/0039-6028(92)91207-r ◽

1992 ◽

Vol 267 (1-3) ◽

pp. 593-600 ◽

Cited By ~ 35

Author(s):

E. Kapon ◽

D.M. Hwang ◽

M. Walther ◽

R. Bhat ◽

N.G. Stoffel

Keyword(s):

Quantum Wire ◽

Quantum Confinement ◽

Multiple Quantum ◽

Two Dimensional

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Photoluminescence in Porous Silicon: Evidence for the Quantum Confinement Model

MRS Proceedings ◽

10.1557/proc-256-111 ◽

1991 ◽

Vol 256 ◽

Cited By ~ 4

Author(s):

David L. Naylor ◽

Sung B. Lee ◽

John C. Pincenti ◽

Brett E. Bouma

Keyword(s):

Porous Silicon ◽

Hydrofluoric Acid ◽

Quantum Wire ◽

Quantum Confinement ◽

Electrochemical Etching ◽

Photoluminescence Spectra ◽

Peak Wavelength ◽

Effects Of Temperature ◽

Good Agreement ◽

Confinement Model

ABSTRACTPhotoluminescence spectra have been measured in porous silicon following electrochemical etching in dilute hydrofluoric acid (HF). The effects of HF concentration during etching on the efficiency and peak wavelength of photoluminescence have been investigated. The effects of temperature between 25°C and 200°C on PL spectra have been recorded. Photoluminescence lifetimes as a function of wavelength have been studied following ultrashort UV photoexcitation. A number of lifetime components in the decay are observed the longest in good agreement over the wavelength range of 500 to 600 nm with a silicon quantum wire model. At longer wavelengths a departure from lifetimes of the wire model is observed and two hypotheses for the discrepancy are presented.

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Carrier capture and quantum confinement in GaAs/AlGaAs quantum wire lasers grown on V‐grooved substrates

Applied Physics Letters ◽

10.1063/1.106595 ◽

1992 ◽

Vol 60 (5) ◽

pp. 521-523 ◽

Cited By ~ 105

Author(s):

M. Walther ◽

E. Kapon ◽

J. Christen ◽

D. M. Hwang ◽

R. Bhat

Keyword(s):

Quantum Wire ◽

Quantum Confinement ◽

Carrier Capture

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Quantum wire in a longitudinal magnetic field: Effect of quantum confinement on magnetization

Physical Review B ◽

10.1103/physrevb.46.15270 ◽

1992 ◽

Vol 46 (23) ◽

pp. 15270-15273 ◽

Cited By ~ 9

Author(s):

G. Ihm ◽

M. L. Falk ◽

S. K. Noh ◽

S. J. Lee ◽

T. W. Kim

Keyword(s):

Magnetic Field ◽

Quantum Wire ◽

Quantum Confinement ◽

Field Effect ◽

Longitudinal Magnetic Field ◽

Magnetic Field Effect

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Optical properties of remotely doped AlAs/GaAs coupled quantum wire arrays. I. Periodic quantum confinement and localization of minority carriers

Physical Review B ◽

10.1103/physrevb.65.195302 ◽

2002 ◽

Vol 65 (19) ◽

Cited By ~ 3

Author(s):

T. Mélin ◽

F. Laruelle

Keyword(s):

Optical Properties ◽

Quantum Wire ◽

Quantum Confinement ◽

Wire Arrays ◽

Minority Carriers

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Pholuminuksence Studies on Porous Silioon Quantum Confinement Mechanism

MRS Proceedings ◽

10.1557/proc-298-123 ◽

1993 ◽

Vol 298 ◽

Cited By ~ 1

Author(s):

Shulin Zhang ◽

Kuoksan He ◽

Yangtian Hou ◽

Xin Wang ◽

Jingjian Li ◽

...

Keyword(s):

Porous Silicon ◽

Current Density ◽

Quantum Wire ◽

Quantum Confinement ◽

Mechanism Model ◽

Peak Energy ◽

P Type ◽

Silicon Based ◽

First Time ◽

Photoluminescence Peak

AbstractA novel step—like and pinning behavior of photoluminescence peak energy connected with changes in the concentration of HIF and current density were for the first time observed for p— type porous silicon. Based on a theoretical calculation of the electron structure of the silicon quantum wire it is argued that these behaviors can be explained in terms of a novel formation mechanism model of porous silicon.

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Quantum confinement and charge control in deep mesa etched quantum wire devices

IEEE Electron Device Letters ◽

10.1109/55.215083 ◽

1993 ◽

Vol 14 (1) ◽

pp. 7-9 ◽

Cited By ~ 16

Author(s):

D. Jovanovic ◽

J.-P. Leburton

Keyword(s):

Quantum Wire ◽

Quantum Confinement ◽

Charge Control

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Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138592 ◽

1995 ◽

Vol 53 ◽

pp. 444-445

Author(s):

S. Hillyard ◽

Y.-P. Chen ◽

J.D. Reed ◽

W.J. Schaff ◽

L.F. Eastman ◽

...

Keyword(s):

Electron Diffraction ◽

Semiconductor Lasers ◽

Quantum Wire ◽

Quantum Wires ◽

Convergent Beam Electron Diffraction ◽

Zero Order ◽

Beam Electron ◽

Local Lattice ◽

Device Applications ◽

Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

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