Carrier capture and quantum confinement in GaAs/AlGaAs quantum wire lasers grown on V‐grooved substrates

1992 ◽  
Vol 60 (5) ◽  
pp. 521-523 ◽  
Author(s):  
M. Walther ◽  
E. Kapon ◽  
J. Christen ◽  
D. M. Hwang ◽  
R. Bhat
Keyword(s):  
Quantum Wire ◽  
Quantum Confinement ◽  
Carrier Capture

Alloy Segregation, Quantum Confinement, and Carrier Capture in Self-Ordered Pyramidal Quantum Wires

Nano Letters ◽  
2006 ◽  
Vol 6 (5) ◽  
pp. 1036-1041 ◽  
Author(s):  
Q. Zhu ◽  
E. Pelucchi ◽  
S. Dalessi ◽  
K. Leifer ◽  
M.-A. Dupertuis ◽  
...  
Keyword(s):  
Quantum Confinement ◽  
Quantum Wires ◽  
Carrier Capture ◽  
Alloy Segregation

Two-dimensional quantum confinement in multiple quantum wire lasers grown by OMCVD on V-grooved substrates

1992 ◽  
Vol 267 (1-3) ◽  
pp. 593-600 ◽  
Author(s):  
E. Kapon ◽  
D.M. Hwang ◽  
M. Walther ◽  
R. Bhat ◽  
N.G. Stoffel
Keyword(s):  
Quantum Wire ◽  
Quantum Confinement ◽  
Multiple Quantum ◽  
Two Dimensional

Photoluminescence in Porous Silicon: Evidence for the Quantum Confinement Model

1991 ◽  
Vol 256 ◽  
Author(s):  
David L. Naylor ◽  
Sung B. Lee ◽  
John C. Pincenti ◽  
Brett E. Bouma
Keyword(s):  
Porous Silicon ◽  
Hydrofluoric Acid ◽  
Quantum Wire ◽  
Quantum Confinement ◽  
Electrochemical Etching ◽  
Photoluminescence Spectra ◽  
Peak Wavelength ◽  
Effects Of Temperature ◽  
Good Agreement ◽  
Confinement Model

ABSTRACTPhotoluminescence spectra have been measured in porous silicon following electrochemical etching in dilute hydrofluoric acid (HF). The effects of HF concentration during etching on the efficiency and peak wavelength of photoluminescence have been investigated. The effects of temperature between 25°C and 200°C on PL spectra have been recorded. Photoluminescence lifetimes as a function of wavelength have been studied following ultrashort UV photoexcitation. A number of lifetime components in the decay are observed the longest in good agreement over the wavelength range of 500 to 600 nm with a silicon quantum wire model. At longer wavelengths a departure from lifetimes of the wire model is observed and two hypotheses for the discrepancy are presented.

Carrier Capture and Stimulated Emission in Quantum Wire Lasers Grown on Nonplanar Substrates

1993 ◽  
pp. 317-330 ◽  
Author(s):  
E. Kapon ◽  
M. Walther ◽  
D. M. Hwang ◽  
E. Colas ◽  
C. Caneau ◽  
...  
Keyword(s):  
Quantum Wire ◽  
Stimulated Emission ◽  
Carrier Capture

Quantum wire in a longitudinal magnetic field: Effect of quantum confinement on magnetization

1992 ◽  
Vol 46 (23) ◽  
pp. 15270-15273 ◽  
Author(s):  
G. Ihm ◽  
M. L. Falk ◽  
S. K. Noh ◽  
S. J. Lee ◽  
T. W. Kim
Keyword(s):  
Magnetic Field ◽  
Quantum Wire ◽  
Quantum Confinement ◽  
Field Effect ◽  
Longitudinal Magnetic Field ◽  
Magnetic Field Effect

Carrier capture in quantum well embedded quantum wire structures

1996 ◽  
Vol 69 (3) ◽  
pp. 360-362 ◽  
Author(s):  
N. S. Mansour ◽  
Yu. M. Sirenko ◽  
K. W. Kim ◽  
M. A. Littlejohn ◽  
M. A. Stroscio
Keyword(s):  
Quantum Well ◽  
Quantum Wire ◽  
Carrier Capture

Improvement of carrier capture efficiency of short‐period GaAs/AlGaAs quantum wire array by a new lithography method

1996 ◽  
Vol 69 (7) ◽  
pp. 955-956 ◽  
Author(s):  
Tae Geun Kim ◽  
Eun Kyu Kim ◽  
Suk‐Ki Min ◽  
Jung‐Ho Park
Keyword(s):  
Quantum Wire ◽  
Wire Array ◽  
Capture Efficiency ◽  
Carrier Capture ◽  
Short Period

The directionality of quantum confinement on strain-induced quantum-wire lasers

1998 ◽  
Vol 83 (7) ◽  
pp. 3469-3472 ◽  
Author(s):  
S. T. Chou ◽  
D. E. Wohlert ◽  
K. Y. Cheng ◽  
K. C. Hsieh
Keyword(s):  
Quantum Wire ◽  
Quantum Confinement
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