Pholuminuksence Studies on Porous Silioon Quantum Confinement Mechanism

1993 ◽  
Vol 298 ◽  
Author(s):  
Shulin Zhang ◽  
Kuoksan He ◽  
Yangtian Hou ◽  
Xin Wang ◽  
Jingjian Li ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Quantum Wire ◽  
Quantum Confinement ◽  
Mechanism Model ◽  
Peak Energy ◽  
P Type ◽  
Silicon Based ◽  
First Time ◽  
Photoluminescence Peak

AbstractA novel step—like and pinning behavior of photoluminescence peak energy connected with changes in the concentration of HIF and current density were for the first time observed for p— type porous silicon. Based on a theoretical calculation of the electron structure of the silicon quantum wire it is argued that these behaviors can be explained in terms of a novel formation mechanism model of porous silicon.

Relationships Between Photoluminescence Spectra and Porosity of Porous Silicon

1994 ◽  
Vol 332 ◽  
Author(s):  
H.Z. Song ◽  
L.Z. Zhang ◽  
B.R. Zhang ◽  
G.G. Qin
Keyword(s):  
Porous Silicon ◽  
Quantum Confinement ◽  
Light Emission ◽  
Photoluminescence Spectra ◽  
Lower Side ◽  
Si Substrates ◽  
Peak Energy ◽  
P Type ◽  
Confinement Model

ABSTRACTIt was found that porous silicon (PS) layers formed on 0.01 Ωcm (111) and 0.02 Ωcm (100) Si substrates show high photoluminescence (PL) peak energies on both lower and higher porosity sides and a minimum of PL peak energy at the moderate porosity, while those formed on 0.8 and 10Ωcm (111) p-type Si substrates show an increase of PL peak energy with porosity on the lower side and a saturation of PL peak energy with porosity on the higher side. These experimental facts are not consistent with the quantum confinement model for light emission of PS, which predicts a monotonous increase of PL peak energy with PS porosity.

Comparison of Porous Silicon Etched Gently and Under Illumination

1994 ◽  
Vol 358 ◽  
Author(s):  
Adam A. Filios ◽  
Raphael Tsu
Keyword(s):  
Porous Silicon ◽  
Thermal Annealing ◽  
Raman Line ◽  
Quantum Confinement ◽  
Blue Shift ◽  
The Other ◽  
Bulk Silicon ◽  
Dominant Mechanism ◽  
Peak Energy ◽  
Photoluminescence Peak

ABSTRACTPorous silicon samples prepared in the dark under "gentle" etching conditions clearly demonstrate effects of quantum confinement, such as a correlation of the photoluminescence peak energy with the downshift of the Raman line from 521 cm−1 for bulk silicon, and a blue shift in the remaining weak photoluminescence after thermal annealing. On the other hand, samples prepared under illumination as well as those heavily etched in the dark, though luminesce brightly, show no significant effects of quantum confinement, suggesting a different dominant mechanism for the observed luminescence.

Structural, Surface Morphological and Photoluminescence Properties of Nanostructured Porous Silicon Material for Optoelectronics Application

2012 ◽  
Vol 584 ◽  
pp. 290-294 ◽  
Author(s):  
Jeyaprakash Pandiarajan ◽  
Natarajan Jeyakumaran ◽  
Natarajan Prithivikumaran
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Light Emission ◽  
Electrochemical Etching ◽  
Light Emitting Diode ◽  
Radiative Transition ◽  
Sem Images ◽  
Optoelectronic Application ◽  
Gap Opening ◽  
P Type

The promotion of silicon (Si) from being the key material for microelectronics to an interesting material for optoelectronic application is a consequence of the possibility to reduce its device dimensionally by a cheap and easy technique. In fact, electrochemical etching of Si under controlled conditions leads to the formation of nanocrystalline porous silicon (PS) where quantum confinement of photo excited carriers and surface species yield to a band gap opening and an increased radiative transition rate resulting in efficient light emission. In the present study, the nanostructured PS samples were prepared using anodic etching of p-type silicon. The effect of current density on structural and optical properties of PS, has been investigated. XRD studies confirm the presence of silicon nanocrystallites in the PS structure. By increasing the current density, the average estimated values of grain size are found to be decreased. SEM images indicate that the pores are surrounded by a thick columnar network of silicon walls. The observed PL spectra at room temperature for all the current densities confirm the formation of PS structures with nanocrystalline features. PL studies reveal that there is a prominent visible emission peak at 606 nm. The obtained variation of intensity in PL emission may be used for intensity varied light emitting diode applications. These studies confirm that the PS is a versatile material with potential for optoelectronics application.

Photovoltaic Characterization of Trapping in Porous Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
D. W. Boeringer ◽  
R. Tsu
Keyword(s):  
Porous Silicon ◽  
Photovoltaic Effect ◽  
Light Spot ◽  
Dangling Bond ◽  
Photogenerated Electrons ◽  
Device Applications ◽  
Photovoltaic Characterization ◽  
P Type ◽  
Silicon Based ◽  
Position Sensitive Detectors

ABSTRACTWe report the first observation of the lateral photovoltaic effect in porous silicon. Contacts placed on either side of a porous silicon region develop a voltage up to several millivolts if the sample is asymmetrically illuminated. If the light spot is closer to one contact, the voltage will have one polarity; if it is closer to the other contact, the polarity will be opposite. In the case of n-type, the contact nearest the light spot is positive; for p-type, the contact nearest the light spot is negative In the region between the contacts, the photovoltage varies almost linearly with the position of the light spot, over a distance 4.5 cm across. The origin of our lateral photoeffect may be explained by the trapping of photoexcited carriers by a pair of dangling bond centers in porous silicon. In the case of p-type, the photogenerated electrons are trapped by the dangling bond states while holes diffuse away in the substrate. The situation for n-type is opposite; holes are trapped by the dangling bond states while electrons diffuse away in the substrate. This differs from the conventional lateral photoeffect, which arises under the nonuniform illumination of a junction between two layers of differing conductivities. Hamamatsu sells silicon-based position-sensitive detectors with a resolution down to 0.1 µm. The possibility of using this lateral photoeffect to characterize these dangling bond states in porous silicon as well as several possible device applications will be discussed.

Steplike behavior of photoluminescence peak energy and formation ofp‐type porous silicon

1993 ◽  
Vol 62 (6) ◽  
pp. 642-644 ◽  
Author(s):  
Shu‐Lin Zhang ◽  
Kuok‐san Ho ◽  
Yongtian Hou ◽  
Bidong Qian ◽  
Peng Diao ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Peak Energy ◽  
Photoluminescence Peak

Preparation and Characterization of ZnS/ZnO Compound Grown on Porous Silicon Substrate Using CVD Method

2010 ◽  
Vol 663-665 ◽  
pp. 393-396
Author(s):  
Fu Ru Zhong ◽  
Xiao Yi Lv ◽  
Zhen Hong Jia
Keyword(s):  
Electron Microscopy ◽  
Porous Silicon ◽  
Room Temperature ◽  
Zinc Sulphide ◽  
Cvd Method ◽  
Peak Energy ◽  
Porous Silicon Substrate ◽  
Photoluminescence Peak ◽  
Scanning Electron

We have investigated the morphology and photoluminescence (PL) of Zinc Oxide (ZnO) and Zinc sulphide (ZnS) compound grown on porous silicon at room temperature. Under different excitation wavelengths (320 nm, 340nm, 370 nm), the photoluminescence (PL) spectra of PS-ZnS-ZnO composites were different, and at 550nm there is a strong photoluminescence peak. Energy dispersive spectroscopy (EDS) has been carried out to evaluate the existing of ZnO/ZnS compound. In addition, the scanning electron microscopy (SEM) observation shows that the morphology of the PS-ZnS-ZnO composites was well grown on porous silicon.

Photoluminescence in Porous Silicon: Evidence for the Quantum Confinement Model

1991 ◽  
Vol 256 ◽  
Author(s):  
David L. Naylor ◽  
Sung B. Lee ◽  
John C. Pincenti ◽  
Brett E. Bouma
Keyword(s):  
Porous Silicon ◽  
Hydrofluoric Acid ◽  
Quantum Wire ◽  
Quantum Confinement ◽  
Electrochemical Etching ◽  
Photoluminescence Spectra ◽  
Peak Wavelength ◽  
Effects Of Temperature ◽  
Good Agreement ◽  
Confinement Model

ABSTRACTPhotoluminescence spectra have been measured in porous silicon following electrochemical etching in dilute hydrofluoric acid (HF). The effects of HF concentration during etching on the efficiency and peak wavelength of photoluminescence have been investigated. The effects of temperature between 25°C and 200°C on PL spectra have been recorded. Photoluminescence lifetimes as a function of wavelength have been studied following ultrashort UV photoexcitation. A number of lifetime components in the decay are observed the longest in good agreement over the wavelength range of 500 to 600 nm with a silicon quantum wire model. At longer wavelengths a departure from lifetimes of the wire model is observed and two hypotheses for the discrepancy are presented.

Photoluminescence peak energy evolution for porous silicon during photo-oxidation and gamma -ray oxidation

1995 ◽  
Vol 7 (3) ◽  
pp. 697-704 ◽  
Author(s):  
L Z Zhang ◽  
B Q Zong ◽  
B R Zhang ◽  
Z H Xu ◽  
J Q Li ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Gamma Ray ◽  
Energy Evolution ◽  
Photo Oxidation ◽  
Peak Energy ◽  
Photoluminescence Peak

On Similar Electrical, Optical and Structural Properties of MOS Structures Prepared on a-Si:H/c-Si, Porous Silicon/c-Si, and c-Si

2009 ◽  
Vol 609 ◽  
pp. 11-25
Author(s):  
Emil Pinčík ◽  
Hikaru Kobayashi ◽  
Róbert Brunner ◽  
Masao Takahashi ◽  
Jaroslav Rusnák ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Structural Properties ◽  
Deep Level ◽  
Grazing Incidence ◽  
Flat Band ◽  
Light Illumination ◽  
Transient Spectroscopy ◽  
P Type ◽  
Silicon Based ◽  
Mos Structures

The paper presents results of research of similar electrical, optical and structural properties of three types of MOS structures prepared on different Si-based semiconductors. Electrical interface properties are investigated by institutionally produced equipment with Charge Version of Deep Level Transient Spectroscopy and time domain C-V. X-ray diffraction at grazing incidence angles is applied to control their structural properties. Optical properties of selected structures are investigated by photoluminescence measurements at liquid helium temperature (approx. 6K in cryostat). Dominant interest is focused on analysis of both electrical properties of MOS porous silicon based structures prepared on p-type crystalline Si and photoluminescence signals of the structures observed around 1.1 eV, respectively. Such parameters as Fermi level position, flat-band voltage, surface potential, position of deep level hole traps, and acceptor density are calculated for various conditions as defined by sample ambient, temperature, and light illumination. Following two main findings are analyzed: i) total suppression of large C-V hysteresis due to suitable illumination and ii) recovering of part of detected interface states in the dark.

A Systematic Study of the Structural and Luminescence Properties of P-Type Porous Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
H. Yoon ◽  
M. S. Goorsky
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Storage Time ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Luminescence Properties ◽  
Strained Layers ◽  
X Ray ◽  
P Type ◽  
The Relationship

AbstractThe structural and luminescence properties of (001) p-type porous silicon samples (p∼0.1-0.2 Ω•cm) fabricated electrochemically under various conditions were investigated using high resolution double and triple axis diffraction and photoluminescence spectroscopy. We show the sensitivity of the structure of the porous silicon to the current density in the range of 10-50 mA/cm2, HF acid concentration in the range of 15% - 30%, and the evolution of the structure with time. We have found a systematic dependence of the amount of strain in the porous silicon layer (PSL) on the current density. The effect of the HF concentration is such that at 25% and 30% HF, PSLs are formed which are crystalline and strained, but at a lower HF concentration (15%), strained layers are not formed. The perpendicular strain in the layer increases linearly with storage time but the in-plane lattice constant of the porous silicon remains matched to the substrate. Further, we utilized x-ray reciprocal space maps to observe that, with storage time, there is an increase in the diffuse scattering from the PSL due to an increase in the range of tilts in the layer. Room temperature photoluminescence emission was observed for all 15% and 25% HF samples, but not for all 30% HF samples. Higher peak luminescence energy was obtained with lower HF concentration. Finally, we note the relationship between the strain in the PSL and the luminescence properties.

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