scholarly journals Vapor-liquid-solid growth of Ge nanowhiskers enhanced by high-temperature glancing angle deposition

2011 ◽  
Vol 99 (22) ◽  
pp. 223107 ◽  
Author(s):  
Motofumi Suzuki ◽  
Kenji Hamachi ◽  
Hideki Hara ◽  
Kaoru Nakajima ◽  
Kenji Kimura ◽  
...  
Keyword(s):  
High Temperature ◽  
Glancing Angle Deposition ◽  
Vapor Liquid Solid ◽  
Glancing Angle ◽  
Angle Deposition ◽  
Vapor Liquid Solid Growth ◽  
Vapor Liquid

Fabrication of Crystalline Semiconductor Nanowires by Vapor-Liquid-Solid Glancing Angle Deposition (VLS-GLAD) Technique

2011 ◽  
Vol 1350 ◽  
Author(s):  
Arif S. Alagoz ◽  
Tansel Karabacak
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Semiconductor Nanowires ◽  
Glancing Angle Deposition ◽  
Nanowire Arrays ◽  
Vapor Liquid Solid ◽  
Crystalline Semiconductor ◽  
Glancing Angle ◽  
Angle Deposition ◽  
Vapor Liquid

ABSTRACTVapor-liquid-solid (VLS) method has become one of the few and most powerful bottom-up single crystal nanowire growth techniques in nanotechnology due to its easy scalability from micro to nano feature sizes, high throughput, relatively low cost, and its applicability to various semiconductor materials. On the other hand, control of growth direction and crystal orientation of nanowires, which determine their electrical, optical, and mechanical properties, stand as major issues in VLS technique. In this study, we demonstrate a new vapor-liquid-solid glancing angle deposition (VLS-GLAD) fabrication approach to produce crystalline semiconductor nanowires with controlled geometry. VLS-GLAD is a physical vapor deposition nanowire fabrication approach based on selective deposition of nanowire source atoms onto metal catalyst nanoislands placed on a crystal wafer. In this technique, collimated obliquely incident flux of source atoms selectively deposit on catalyst islands by using “shadowing effect”. Geometrical showing effect combined with conventional VLS growth mechanism leads to the growth of tilted crystalline semiconductor nanowire arrays. In this study, we report morphological and structural properties of tilted single crystal germanium nanowire arrays fabricated by utilizing a conventional thermal evaporation system. In addition to the tilted geometry, by introducing substrate rotation, nanowires with various morphologies including helical, zig-zag, or vertical shapes can be fabricated. Engineering crystalline nanowire morphology by using VLS-GLAD have the potential of enabling control of optical, electrical, and mechanical properties of these nanostructures leading to the development of novel 3D nano-devices.

Growth of Nanowires by High-Temperature Glancing Angle Deposition

2013 ◽  
Vol 52 (11R) ◽  
pp. 110116
Author(s):  
Motofumi Suzuki ◽  
Haruhiko Minamitake ◽  
Ryo Kita ◽  
Kenji Hamachi ◽  
Hideki Hara ◽  
...  
Keyword(s):  
High Temperature ◽  
Glancing Angle Deposition ◽  
Glancing Angle ◽  
Angle Deposition

scholarly journals Growth of Metal Nanowhiskers on Patterned Substrate by High Temperature Glancing Angle Deposition

2010 ◽  
Vol 157 (2) ◽  
pp. K34 ◽  
Author(s):  
Motofumi Suzuki ◽  
Ryo Kita ◽  
Hideki Hara ◽  
Kenji Hamachi ◽  
Koji Nagai ◽  
...  
Keyword(s):  
High Temperature ◽  
Glancing Angle Deposition ◽  
Patterned Substrate ◽  
Glancing Angle ◽  
Angle Deposition

Effect of the Surface Nanomorphology on the Growth of Al Whiskers Formed by Glancing Angle Deposition on a High Temperature Substrate

2007 ◽  
Vol 1059 ◽  
Author(s):  
Kenji Hamachi ◽  
Motofumi Suzuki ◽  
Kaoru Nakajima ◽  
Kenji Kimura
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Substrate Surface ◽  
Side Surface ◽  
Glancing Angle Deposition ◽  
Transport Processes ◽  
The Other ◽  
Glancing Angle ◽  
20 Nm ◽  
Angle Deposition

ABSTRACTWe have investigated the effect of the substrate-surface morphology on the growth of Al whiskers grown by high temperature glancing angle deposition (HT-GLAD). Before the HT-GLAD of Al at 390 °C, the morphology of the substrate was systematically modified by depositing nanocolumnar SiO2 layer of thickness between 0 and 100 nm on the flat SiO2 layer. Aluminum whiskers with the width of ≈100 nm and the length ≤ μm are found on all the samples. The number of short whiskers, which can be grown from very small nuclei, depends strongly on the thickness of the SiO2 nanocolumnar layer and shows the maximum at SiO2 thickness of 20 nm. On the other hand, the number of long whiskers, which requires extraordinary amount of Al than that deposited on the side surface of the whikers, is almost independent of SiO2 thickness. These facts suggest that the surface roughness of the substrate plays an important role in the nucleation of the whiskers and that there are some transport processes of Al, which are insensitive to the surface morphology.

scholarly journals Vapor phase growth of Al whiskers induced by glancing angle deposition at high temperature

2006 ◽  
Vol 89 (13) ◽  
pp. 133103 ◽  
Author(s):  
Motofumi Suzuki ◽  
Koji Nagai ◽  
Sadamu Kinoshita ◽  
Kaoru Nakajima ◽  
Kenji Kimura ◽  
...  
Keyword(s):  
High Temperature ◽  
Vapor Phase ◽  
Glancing Angle Deposition ◽  
Phase Growth ◽  
Vapor Phase Growth ◽  
Glancing Angle ◽  
Angle Deposition

scholarly journals Growth of Metal Nanowhiskers on Patterned Substrate by High-Temperature Glancing Angle Deposition

2019 ◽  
Vol 25 (10) ◽  
pp. 29-39
Author(s):  
Motofumi Suzuki ◽  
Hideki Hara ◽  
Ryo Kita ◽  
Kenji Hamachi ◽  
Koji Nagai ◽  
...  
Keyword(s):  
High Temperature ◽  
Glancing Angle Deposition ◽  
Patterned Substrate ◽  
Glancing Angle ◽  
Angle Deposition

Growth of Nanowhiskers of Al, Ti, Cr, Mn, Fe, Co, Ni, Zn, Cu, Ag and Au by High-Temperature Glancing Angle Deposition

2019 ◽  
Vol 33 (9) ◽  
pp. 41-48 ◽  
Author(s):  
Motofumi Suzuki ◽  
Kenji Hamachi ◽  
Koji Nagai ◽  
Ryo Kita ◽  
Kaoru Nakajima ◽  
...  
Keyword(s):  
High Temperature ◽  
Glancing Angle Deposition ◽  
Glancing Angle ◽  
Angle Deposition
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