Synthesis and electron field emission of nanocrystalline diamond thin films grown from N2/CH4 microwave plasmas

1997 ◽  
Vol 82 (9) ◽  
pp. 4546-4550 ◽  
Author(s):  
D. Zhou ◽  
A. R. Krauss ◽  
L. C. Qin ◽  
T. G. McCauley ◽  
D. M. Gruen ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Nanocrystalline Diamond ◽  
Electron Field Emission ◽  
Microwave Plasmas ◽  
Electron Field ◽  
Diamond Thin Films

Influence of sulfur incorporation on field-emission properties of microcrystalline diamond thin films

2003 ◽  
Vol 18 (11) ◽  
pp. 2708-2716 ◽  
Author(s):  
S. Gupta ◽  
B.R. Weiner ◽  
G. Morell
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Electron Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Turn On ◽  
Electron Field ◽  
Diamond Thin Films

Results are reported on the electron field emission properties of microcrystalline diamond thin films grown on molybdenum substrates by the sulfur (S)-assisted hot-filament chemical vapor deposition technique using methane (CH4), hydrogen sulfide (H2S), and hydrogen (H2) gas mixtures. Electron field-emission measurements revealed that the S-incorporated microcrystalline diamond thin films have substantially lower turn-on fields and steep rising currents as compared to those grown without sulfur. The field-emission properties for the S-incorporated films were also investigated systematically as a function of substrate temperature (TS). Lowest turn-on field achieved was observed at around 12.5 V/μm for the samples grown at TS of 700°C with 500 ppm H2S. To establish the property-structure correlation, we analyzed the films with multiple characterizations include scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy (RS), and x-ray photoelectron spectroscopy (XPS) techniques. It was found that sulfur addition causes significant microstructural changes in microcrystalline diamond thin films. S-assisted films show smoother, coarse-grained surfaces (non-faceted) than those grown without it (well-faceted) and a relatively higher content of non-diamond carbon (primarily sp2-bonded C). RS and investigations on the morphology by SEM and AFM indicated the increase of sp2 C content with increasing TS followed by a morphological transition at 700°C in the films. XPS investigations also showed the incorporation of S in the films up to a few atomic layers. It is believed that the electron-emission properties are governed by the sulfur incorporation during the chemical vapor deposition process. Although most of the S is expected to be electrically inactive, under the high doping conditions hereby used, it is shown rather indirectly through multiple characterizations that there may be some amount of S in donor states. Therefore the results are discussed in terms of the dual role of S whereby it induces the structural defects in the form of enhanced sp2 C content at the expense of diamond quality and a possibility of availability of conduction electrons. In fact the latter finding is supported through room temperature electrical conductivity measurements.

scholarly journals Effects of applying stress on the electron field emission properties in amorphous carbon thin films

2005 ◽  
Vol 86 (23) ◽  
pp. 232102 ◽  
Author(s):  
C. H. P. Poa ◽  
S. R. P. Silva ◽  
R. G. Lacerda ◽  
G. A. J. Amaratunga ◽  
W. I. Milne ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Amorphous Carbon ◽  
Electron Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Electron Field ◽  
Carbon Thin Films ◽  
Electron Field Emission Properties

Study of the electron field emission and microstructure correlation in nanocrystalline carbon thin films

2001 ◽  
Vol 89 (10) ◽  
pp. 5671-5675 ◽  
Author(s):  
S. Gupta ◽  
B. L. Weiss ◽  
B. R. Weiner ◽  
G. Morell
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Electron Field Emission ◽  
Electron Field ◽  
Carbon Thin Films

Electron field emission from patterned nanocrystalline diamond coated a-SiO2 micrometer-tip arrays

2008 ◽  
Vol 92 (2) ◽  
pp. 023113 ◽  
Author(s):  
J. C. Madaleno ◽  
M. K. Singh ◽  
E. Titus ◽  
Gil Cabral ◽  
J. Grácio ◽  
...  
Keyword(s):  
Field Emission ◽  
Nanocrystalline Diamond ◽  
Electron Field Emission ◽  
Electron Field

Electron field emission from thin films of amorphous carbon nitride synthesized by arc ion plating

2002 ◽  
Vol 407 (1-2) ◽  
pp. 104-108 ◽  
Author(s):  
Hiroyuki Sugimura ◽  
Yoshiki Sato ◽  
Yoshiaki Ando ◽  
Nobuhiro Tajima ◽  
Osamu Takai
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Amorphous Carbon ◽  
Carbon Nitride ◽  
Electron Field Emission ◽  
Arc Ion Plating ◽  
Ion Plating ◽  
Electron Field ◽  
Amorphous Carbon Nitride

Effects of Sulfur Concentration on the Electron Field Emission Properties of Nanocrystalline Carbon Thin Films

2001 ◽  
Vol 675 ◽  
Author(s):  
S. Gupta ◽  
B. R. Weiner ◽  
B. L. Weiss ◽  
G. Morell
Keyword(s):  
Thin Films ◽  
Hydrogen Sulfide ◽  
Field Emission ◽  
Electron Field Emission ◽  
Sulfur Concentration ◽  
Electronic Band ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Electron Field ◽  
Electron Field Emission Properties

ABSTRACTThe electron field emission properties of sulfur-assisted nanocrystalline carbon (n-C: S) thin films grown on molybdenum substrates by hot-filament CVD technique using methane-hydrogen (CH4/H2) and hydrogen sulfide-hydrogen (H2S/H2) gas mixtures were investigated. The field emission properties of the S-assisted films are reported as a function of sulfur concentration. The incorporation of S caused structural and microstructural changes that were characterized with SEM, AFM and Raman spectroscopy (RS). The S-assisted films show smoother surfaces and smaller grains than those grown without. The lowest turn-on field measured was around 4.5 – 5.0 V/μm films grown with 500 ppm of hydrogen sulfide and at 900 °C. The electron field emission properties of S-assisted films were also compared to those grown without sulfur (i.e., intrinsic). An inverse correlation between the threshold field (Ec) and sulfur concentration was found. These finding are attributed to defect induced states within the electronic band structure.

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