scholarly journals Effects of applying stress on the electron field emission properties in amorphous carbon thin films

2005 ◽  
Vol 86 (23) ◽  
pp. 232102 ◽  
Author(s):  
C. H. P. Poa ◽  
S. R. P. Silva ◽  
R. G. Lacerda ◽  
G. A. J. Amaratunga ◽  
W. I. Milne ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Amorphous Carbon ◽  
Electron Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Electron Field ◽  
Carbon Thin Films ◽  
Electron Field Emission Properties

Effects of Sulfur Concentration on the Electron Field Emission Properties of Nanocrystalline Carbon Thin Films

2001 ◽  
Vol 675 ◽  
Author(s):  
S. Gupta ◽  
B. R. Weiner ◽  
B. L. Weiss ◽  
G. Morell
Keyword(s):  
Thin Films ◽  
Hydrogen Sulfide ◽  
Field Emission ◽  
Electron Field Emission ◽  
Sulfur Concentration ◽  
Electronic Band ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Electron Field ◽  
Electron Field Emission Properties

ABSTRACTThe electron field emission properties of sulfur-assisted nanocrystalline carbon (n-C: S) thin films grown on molybdenum substrates by hot-filament CVD technique using methane-hydrogen (CH4/H2) and hydrogen sulfide-hydrogen (H2S/H2) gas mixtures were investigated. The field emission properties of the S-assisted films are reported as a function of sulfur concentration. The incorporation of S caused structural and microstructural changes that were characterized with SEM, AFM and Raman spectroscopy (RS). The S-assisted films show smoother surfaces and smaller grains than those grown without. The lowest turn-on field measured was around 4.5 – 5.0 V/μm films grown with 500 ppm of hydrogen sulfide and at 900 °C. The electron field emission properties of S-assisted films were also compared to those grown without sulfur (i.e., intrinsic). An inverse correlation between the threshold field (Ec) and sulfur concentration was found. These finding are attributed to defect induced states within the electronic band structure.

Ain Thin Films Prepared by Reactive Ion Beam Coating

1999 ◽  
Vol 585 ◽  
Author(s):  
L. L. Cheng ◽  
Y H. Yu ◽  
B. Sundaravel ◽  
E. Z. Luo ◽  
S. Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Ion Beam ◽  
Wide Band ◽  
Electron Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Preparation Conditions ◽  
Electron Field ◽  
Electron Field Emission Properties

AbstractAluminum Nitride (AIN) is a promising material for a variety of technological applications because it has many exceptional properties, such as wide band gap (WBG) and negative electron affinity (NEA). AIN thin films were prepared by Reactive Ion Beam Coating. The properties of the AIN thin films may be a function of one of the preparation conditions: the beam energy. We used the non-Rutherford backscattering (non-RBS) and Auger Electron Spectroscopy (AES) results to analyze the composition of the AIN thin films. Atomic Force Microscopy (AFM) was applied to study the morphology of films. On the other hand, electron field emission properties were also studied to find the relationship between the compositional, morphological and electron field emission properties of the AIN thin films.

The effect of argon on the electron field emission properties of α-C:N thin films

Carbon ◽  
2003 ◽  
Vol 41 (6) ◽  
pp. 1143-1148 ◽  
Author(s):  
X.W. Liu ◽  
L.H. Chan ◽  
W.J. Hsieh ◽  
J.H. Lin ◽  
H.C. Shih
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Electron Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Electron Field ◽  
Electron Field Emission Properties

Low-Field Electron Emission Properties from Intrinsic and S-Incorporated Nanocrystalline Carbon Thin Films Grown by Hot- Filament CVD

2000 ◽  
Vol 638 ◽  
Author(s):  
S. Gupta ◽  
B. R. Weiner ◽  
B. L. Weiss ◽  
G. Morell ◽  
Kenyetta Johnson ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Emission ◽  
Structural Changes ◽  
Ex Situ ◽  
Electron Field Emission ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Turn On ◽  
Electron Field ◽  
Electron Field Emission Properties

AbstractResults are reported on the electron field emission properties of intrinsic and S- incorporated nanocrystalline carbon (n-C:S) thin films grown on molybdenum substrates by hotfilament CVD technique from methane-hydrogen (CH4/H2) and hydrogen sulphide-hydrogen (H2S/H2) gas pre mixtures respectively. The field emission properties for the S-incorporated films were investigated as a function of substrate temperature (TS). Lowest turn-on field was observed at 4.5 V/μm for one of the sample, which was grown at 900 °C, demonstrating the effect of sulfur addition. The S-incorporation also causes microstructural and structural changes, as characterized with ex situ techniques such as SEM, AFM and Raman spectroscopy (RS). Sassisted films show smoother surfaces and finer-grained than those grown without it. The electron field emission properties of S-assisted films is also compared to the film grown without it (intrinsic) at a particular deposition temperature and the turn-on field was found to be almost half for the S-assisted film than for the non S-assisted film. The influence of growth temperature was also conducted and an inverse correlation was found with the turn-on field (Ec). These studies were performed in order attempt to “tailor-the-material” as a viable cold cathode material by introducing the defecTS and altering the electronic structure.

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