Fast-response signal upconversion by the use of a “time-space conversion” method

2011 ◽  
Vol 99 (19) ◽  
pp. 191101 ◽  
Author(s):  
Mitsunori Saito ◽  
Shingo Nakamura ◽  
Teppei Kita
2021 ◽  
Author(s):  
Yuting Hou ◽  
Minghao Liang ◽  
Fangzhu Qing ◽  
Xuesong Li

2013 ◽  
Vol 25 (2) ◽  
pp. 517-521
Author(s):  
吴建军 Wu Jianjun ◽  
袁锡明 Yuan Ximing ◽  
赵宝升 Zhao Baosheng ◽  
田进寿 Tian Jinshou ◽  
李军科 Li Junke

Sensors ◽  
2020 ◽  
Vol 20 (6) ◽  
pp. 1736 ◽  
Author(s):  
Mingqiang Pan ◽  
Jun Sheng ◽  
Jizhu Liu ◽  
Zeming Shi ◽  
Lei Jiu

Humidity detection range is an important indicator for measuring the performance of humidity sensors, but semiconductor humidity sensors often face the problems of narrow detection ranges and insufficient detection sensitivities. In this paper, a magnesium oxide (MgO) humidity sensor based on micro-arc oxidation (MAO) technology was designed to solve these problems by simultaneously using impedance and capacitance as the response signals, as well as by normalizing the output of the two signals. The experimental results showed that the average output of the micro-arc MgO ceramic film, with impedance as the response signal, could reach 150 in the low relative humidity(RH) range (11.3–67% RH), which was much higher than its sensitivity in the high humidity range (< 1), and the film showed fast response (13 s) and recovery (61 s). Under high humidity conditions (67–97.3% RH), with capacitance as the response signal, the output of the micro-arc MgO was as high as 120. Therefore, the micro-arc MgO humidity sensor with impedance, and the sensor with capacitance as the response signal, demonstrated good stability in low humidity and in high humidity environments, respectively, indicating that the method of selecting appropriate response signals for different humidity environments can be applied to extend the humidity detection range of sensing material, and to improve the humidity detection capability of a sensor.


iScience ◽  
2021 ◽  
pp. 103340
Author(s):  
Yuting Hou ◽  
Minghao Liang ◽  
Fangzhu Qing ◽  
Xuesong Li

Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.


The Analyst ◽  
2020 ◽  
Vol 145 (1) ◽  
pp. 122-131 ◽  
Author(s):  
Wanda V. Fernandez ◽  
Rocío T. Tosello ◽  
José L. Fernández

Gas diffusion electrodes based on nanoporous alumina membranes electrocatalyze hydrogen oxidation at high diffusion-limiting current densities with fast response times.


2020 ◽  
Author(s):  
SMITA GAJANAN NAIK ◽  
Mohammad Hussain Kasim Rabinal

Electrical memory switching effect has received a great interest to develop emerging memory technology such as memristors. The high density, fast response, multi-bit storage and low power consumption are their...


2007 ◽  
Author(s):  
Ursina Teuscher ◽  
David Brang ◽  
Lee Edwards ◽  
Marguerite McQuire ◽  
Vilayanur S. Ramachandran ◽  
...  
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