Mechanisms influencing “hot-wire” deposition of hydrogenated amorphous silicon

1997 ◽  
Vol 82 (4) ◽  
pp. 1909-1917 ◽  
Author(s):  
Edith C. Molenbroek ◽  
A. H. Mahan ◽  
Alan Gallagher
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hot Wire ◽  
Hydrogenated Amorphous

scholarly journals Hot wire deposited hydrogenated amorphous silicon solar cells

1996 ◽  
Author(s):  
A. H. Mahan ◽  
B. P. Nelson ◽  
E. Iwaniczko ◽  
Q. Wang ◽  
E. C. Molenbroek ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Hot Wire ◽  
Hydrogenated Amorphous

Hot-wire CVD hydrogenated amorphous silicon for multi-layer photonic applications

2020 ◽  
Author(s):  
Harold M. H. Chong ◽  
Swe Zin Oo ◽  
Rafidah Petra ◽  
Antulio Tarazona ◽  
Vinita Mittal ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hot Wire ◽  
Hydrogenated Amorphous

Deposition of Device Quality Amorphous Silicon by Hot-Wire CVD

1997 ◽  
Vol 467 ◽  
Author(s):  
K. F. Feenstra ◽  
C. H. M. Van Der Werf ◽  
E. C. Molenbroek ◽  
R. E. I. Schropp
Keyword(s):  
Growth Rate ◽  
Electrical Properties ◽  
Amorphous Silicon ◽  
Diffusion Length ◽  
Hydrogenated Amorphous Silicon ◽  
Dark Conductivity ◽  
Hot Wire ◽  
Tungsten Filaments ◽  
Wire Method ◽  
Hydrogenated Amorphous

ABSTRACTIn this paper we present the results of the optimization of hydrogenated amorphous silicon films deposited by the hot-wire method in a larger area system. Using a two-wire design, we succeeded in depositing films that exhibit uniform electrical properties over the whole 4” x 4” Corning 7059 glass substrate. At a substrate temperature of 430 °C. and a pressure of 20 μbar we obtained a growth rate of ∼2 nm/s. The temperature of the tungsten filaments was kept at 1850 °C. The values for the photoconductivity and dark conductivity were 8.9×10−6 S/cm and 1.6×10−10 S/cm respectively, whereas the ambipolar diffusion length, as measured with the Steady-State Photocarrier Grating technique (SSPG), amounted to 145 nm. This value is higher than for our device quality glow-discharge (GD) films, which yield devices with efficiencies higher than 10%. The hydrogen content was 9.5%.We report on the density-of-states (DOS) distribution in the films, which was measured with the techniques of Thermally Stimulated Conductivity (TSC) and Constant Photocurrent Method (CPM). Furthermore, we describe the behavior of the electrical properties on light-induced degradation. Finally, we incorporated these films in solar cells, using conventional GD doped layers. Preliminary SS/n-i-p/ITO devices yielded efficiencies in excess of 3% under 100 mW/cm2 AM 1.5 illumination. Further work concerning the optimization of the interfaces is in progress.

Light-Induced Change of Si-H Bond Absorption in Hydrogenated Amorphous Silicon

1998 ◽  
Vol 507 ◽  
Author(s):  
Guozhen Yue ◽  
Liangfan Chen ◽  
Qi Wang ◽  
Eugene Iwaniczko ◽  
Guanglin Kong ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Hydrogen Content ◽  
Hydrogenated Amorphous Silicon ◽  
Wave Number ◽  
Ir Absorption ◽  
Hot Wire ◽  
Induced Changes ◽  
Hydrogenated Amorphous

ABSTRACTDevice-quality a-Si:H films were prepared by glow discharge CVD with pure or H-diluted silane as well as by hot-wire CVD. The hydrogen content was varied from ∼2 to 15 at. %. The Si-H bond absorption and its light-soaking-induced changes were studied by IR and differential IR absorption spectroscopes. The results indicate that the more stable sample exhibits an increase of the absorption at wave number ∼2000 cm−1, and the less stable one exhibits a decrease at ∼2040 cm−1and an increase at ∼1880 cm−1.

Microstructure Characterization of Amorphous Silicon Films by Effusion Measurements of Implanted Helium

2013 ◽  
Vol 1536 ◽  
pp. 175-180 ◽  
Author(s):  
W. Beyer ◽  
W. Hilgers ◽  
D. Lennartz ◽  
F.C. Maier ◽  
N.H. Nickel ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Low Temperatures ◽  
Plasma Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hot Wire ◽  
Common Features ◽  
Hydrogenated Amorphous

ABSTRACTAn important property of thin film silicon and related materials is the microstructure which may involve the presence of interconnected and isolated voids. We report on effusion measurements of implanted helium (He) to detect such voids. Several series of hydrogenated and unhydrogenated amorphous silicon films prepared by the methods of plasma deposition, hot wire deposition and vacuum evaporation were investigated. The results show common features like a He effusion peak at low temperatures attributed to He out-diffusion through a compact material or through interconnected voids, and a He effusion peak at high temperatures attributed to He trapped in isolated voids. While undoped plasma-grown device-grade hydrogenated amorphous silicon (a-Si:H) films show a rather low concentration of such isolated voids, its concentration can be rather high in doped a-Si:H, in unhydrogenated evaporated material and others.

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