Electron spin resonance of pulsed plasma-enhanced chemical vapor deposited fluorocarbon films

1997 ◽  
Vol 82 (4) ◽  
pp. 1784-1787 ◽  
Author(s):  
Catherine B. Labelle ◽  
Scott J. Limb ◽  
Karen K. Gleason
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Chemical Vapor ◽  
Pulsed Plasma ◽  
Fluorocarbon Films ◽  
Spin Resonance ◽  
Chemical Vapor Deposited

Electron Spin Resonance Characterization of Defects at Interfaces in Stacks of Ultrathin High-κ Dielectric Layers on Silicon

2003 ◽  
Vol 786 ◽  
Author(s):  
A. L. Stesmans ◽  
V.V. Afanas'ev
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Dielectric Layers ◽  
Growth Standard ◽  
Spin Resonance ◽  
Dielectric Interfaces ◽  
Standard Quality

ABSTRACTElectron spin resonance (ESR) analysis of (100)Si/SiOx/ZrO2, (100)Si/Al2O3 and Si/HfO2 structures with nm-thin dielectric layers deposited by different chemical vapor deposition procedures reveals, after hydrogen detachment, the presence of the trivalent Si dangling-bond-type centers Pb0, Pb1 as prominent defects in all entities. This Pb0, Pb1 fingerprint, generally unique for the thermal (100)Si/SiO2 interface, indicates that the as-deposited (100)Si/metal oxides interface is basically Si/SiO2-like. Though sensitive to the deposition process, the Pb0 density is found to be substantially larger than in standard (100)Si/SiO2. As probed by the Pb- type center properties, the Si/dielectric interfaces of all structures are under enhanced (unrelaxed) stress, typical for low temperature Si/SiO2 growth. Standard quality thermal Si/SiO2 properties in terms of Pb signature may be approached by appropriate annealing (≥ 650°C) in vacuum in the case of (100)Si/SiOx/ZrO2. Yet, O2 ambient appears required for Si/Al2O3 and Si/HfO2. It appears that Si/high-κ metal oxide structures with device grade quality interfaces can be realized with sub-nm thin SiOx interlayers. The density of fast interface states closely matches the Pb0 density variations, suggesting the center as the dominant fast interface trap. They may be efficiently passivated in H2 at 400 °C.

Atmospheric aging and light-induced degradation of amorphous and nanostructured silicon using photoconductivity and electron spin resonance

2014 ◽  
Vol 92 (7/8) ◽  
pp. 713-717 ◽  
Author(s):  
Z.M. Saleh ◽  
G. Nogay ◽  
E. Ozkol ◽  
G. Yilmaz ◽  
M. Sagban ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Electron Spin ◽  
Light Exposure ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Pure Oxygen ◽  
Microcrystalline Silicon ◽  
Nanostructured Silicon ◽  
Dual Beam ◽  
Spin Resonance

Previous studies indicate that the dark conductivity in amorphous and microcrystalline silicon may increase or decrease with exposure to deionized water (DIW) or pure oxygen at 80 °C but always decreases with light exposure. While the light-induced effect is linked to paramagnetic dangling bonds (Do), the origin of metastability in microcrystalline silicon remains unclear. In this study, we use steady-state photoconductivity (SSPC), dual-beam photoconductivity (DBP), and electron spin resonance (ESR), to study the behaviors under soaking in DIW and (or) pure oxygen at 80 °C and light-exposure of amorphous (a-Si:H) and nanostructured (nc-Si:H) silicon samples deposited in a capacitively coupled plasma-enhanced chemical vapor deposition system. Powders from thick samples of low and high crystallinity (Xc) peeling off large substrates were collected in quartz tubes for ESR measurements. Dark conductivity decreases upon exposure to pure oxygen at 80 °C for nc-Si:H but remains unchanged for a-Si:H. The ESR signal attributed to Do decreases with soaking in DIW for high and low crystallinity nc-Si:H but the effect is more significant for higher Xc. Changes in SSPC, DBP, and ESR are used to compare the degradation mechanisms because of O2 exposure and light for amorphous and nanostructured silicon.

Positron Annihilation and Electron Spin Resonance of Electron-Irradiated 3C-SiC

1992 ◽  
Vol 262 ◽  
Author(s):  
Hisayoshi Itoh ◽  
Masahito Yoshikawa ◽  
Long Wei ◽  
Shoichiro Tanigawa ◽  
Isamu Nashiyama ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Positron Annihilation ◽  
Electron Spin ◽  
Removal Rate ◽  
Hyperfine Interactions ◽  
Effective Diffusion ◽  
Chemical Vapor ◽  
Spin Resonance ◽  
G Value ◽  
Cubic Silicon Carbide

ABSTRACTPositron annihilation and electron spin resonance (ESR) have been used to study defects introduced by lMeV electron irradiation in n-type cubic silicon carbide (3C-SiC) epitaxially grown on Si by chemical vapor deposition. Positron annihilation measurements by using variable-energy positron beams indicated the narrowing of the Doppler-broadened energy spectrum of annihilation gamma-rays and the decrease in the effective diffusion length of positrons with increasing the electron fluence. These results show the formation of vacancy-type defects in 3C-SiC. An ESR spectrum labeled T1, which has an isotropie g-value of 2.0029±0.0001, was observed in electron irradiated 3C-SiC. The T1 spectrum is interpreted by hyperfine interactions of paramagnetic electrons with 13C at four carbon sites and 29Si at twelve silicon sites, leads that the Tl center results from a point defect at a silicon sublattice site. The production rate of the Tl center was in good agreement with the carrier removal rate, indicating that the Tl center captures an electron from the conduction band. All these results are accounted for by the introduction of negatively charged vacancies at silicon sublattice sites in 3C-SiC by the irradiation.

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