Shift of surface Fermi level position toward the conduction band minimum by crystal defects near GaAs(001) surface

1997 ◽  
Vol 82 (4) ◽  
pp. 1661-1666 ◽  
Author(s):  
Y. Hirota ◽  
F. Maeda ◽  
Y. Watanabe ◽  
T. Ogino
Keyword(s):  
Fermi Level ◽  
Conduction Band ◽  
Conduction Band Minimum ◽  
Crystal Defects ◽  
Fermi Level Position ◽  
Surface Fermi Level

scholarly journals Control of Surface Fermi Level Position by Controlling Crystal Defects near the GaAs(001) Surface.

Hyomen Kagaku ◽  
1997 ◽  
Vol 18 (10) ◽  
pp. 633-640
Author(s):  
Yukihiro HIROTA ◽  
Fumihiko MAEDA ◽  
Yoshio WATANABE ◽  
Toshio OGINO
Keyword(s):  
Fermi Level ◽  
Crystal Defects ◽  
Fermi Level Position ◽  
Surface Fermi Level

Effect of Bias on Recovery Rates of Stressed Amorphous Silicon Mis Structures

1990 ◽  
Vol 192 ◽  
Author(s):  
W. B. Jackson ◽  
M. Hack
Keyword(s):  
Fermi Level ◽  
Amorphous Silicon ◽  
Conduction Band ◽  
Defect Formation ◽  
Defect States ◽  
Theoretical Understanding ◽  
Fermi Level Position ◽  
Electron Accumulation ◽  
Capacitance Voltage ◽  
Mis Structures

ABSTRACTThe effect of Fermi level position on the annealing of defects created by electron accumulation is investigated. Results indicate that holes accelerate the annealing of defects created by electrons confirming the theoretical understanding of the proximity compensated layer. Capacitance-voltage curves indicate that hole accumulation tends to create defect states located closer to the conduction band than electron accumulation–a result in agreement with energetics of defect formation.

Passivation of Surface and Bulk Defects in InP

1992 ◽  
Vol 262 ◽  
Author(s):  
Sathya Balasubramanian ◽  
Vikram Kumar ◽  
N. Balasubramanian ◽  
V. Premachandran
Keyword(s):  
Fermi Level ◽  
Plasma Treatment ◽  
Band Gap ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Depth Profile ◽  
Hydrogen Plasma ◽  
Deep Levels ◽  
Fermi Level Position ◽  
Surface Fermi Level

ABSTRACTThe effect of sulfur and hydrogen plasma treatment on the Schottky barrier and photoluminescence (PL) properties of p-InP is reported. Both the treatments increase the barrier height of Au/p-InP diodes and band to band PL. This is explained as being due to a shift in the surface fermi level position towards the P vacancy related pinning level in the top half of the band gap. The H+ treatment passivates the shallow and deep levels as observed from the C-V depth profile and PL respectively.

Surface Fermi level position of hydrogen passivated Si(111) surfaces

1996 ◽  
Vol 68 (9) ◽  
pp. 1247-1249 ◽  
Author(s):  
S. Miyazaki ◽  
J. Schäfer ◽  
J. Ristein ◽  
L. Ley
Keyword(s):  
Fermi Level ◽  
Fermi Level Position ◽  
Surface Fermi Level

Alkali-Metal-Induced Highest Fermi-Level Pinning Position above Semiconductor Conduction Band Minimum

1994 ◽  
Vol 26 (5) ◽  
pp. 359-364 ◽  
Author(s):  
V. Yu Aristov ◽  
G. Le Lay ◽  
P Soukiassian ◽  
K Hricovini ◽  
J. E Bonnet ◽  
...  
Keyword(s):  
Alkali Metal ◽  
Fermi Level ◽  
Conduction Band ◽  
Conduction Band Minimum ◽  
Fermi Level Pinning

Photoemission Studies Of The CU-GaAs(ll0) Interface Formation

1983 ◽  
Vol 25 ◽  
Author(s):  
S. H. Pan ◽  
T. Kendelewicz ◽  
W. G. Petru ◽  
M. D. Williams ◽  
I. Lindau ◽  
...  
Keyword(s):  
Fermi Level ◽  
Detailed Analysis ◽  
Conduction Band ◽  
Room Temperature ◽  
Metal Layer ◽  
Conduction Band Minimum ◽  
Strong Interactions ◽  
Interface Formation ◽  
X Ray

ABSTRACTThe cu-GaAS(ll0) interface formation nas been Studied with soft x-ray Photoemssion spectroscopy (SXPS) for Cu overlayers deposited at room temperature. Tne evolution of the tia 3a and As 3a spectra snow that strong interactions occur between Cu and the substrate during the formation of the Cu-GaAs interface. A cnemically smifted Ga 3d peak at 0.8 eV lower binging energy and strong moaification of the As 3d lineshape has been found. Detailed analysis nas shown that the dissociated As is preterentially segregated on the metal layer, but Ga remains mainly in the interfacial reion for trick Cu coverages (30 - 60 Å). Using a deconvolution tecnniqie we nave found that the final stabilized position of the interface Fermi level lies at about 0.9 eV below the conduction band minimum.

Sign in / Sign up

Export Citation Format

Share Document