Surface Fermi level position of hydrogen passivated Si(111) surfaces

1996 ◽  
Vol 68 (9) ◽  
pp. 1247-1249 ◽  
Author(s):  
S. Miyazaki ◽  
J. Schäfer ◽  
J. Ristein ◽  
L. Ley
Keyword(s):  
Fermi Level ◽  
Fermi Level Position ◽  
Surface Fermi Level

Passivation of Surface and Bulk Defects in InP

1992 ◽  
Vol 262 ◽  
Author(s):  
Sathya Balasubramanian ◽  
Vikram Kumar ◽  
N. Balasubramanian ◽  
V. Premachandran
Keyword(s):  
Fermi Level ◽  
Plasma Treatment ◽  
Band Gap ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Depth Profile ◽  
Hydrogen Plasma ◽  
Deep Levels ◽  
Fermi Level Position ◽  
Surface Fermi Level

ABSTRACTThe effect of sulfur and hydrogen plasma treatment on the Schottky barrier and photoluminescence (PL) properties of p-InP is reported. Both the treatments increase the barrier height of Au/p-InP diodes and band to band PL. This is explained as being due to a shift in the surface fermi level position towards the P vacancy related pinning level in the top half of the band gap. The H+ treatment passivates the shallow and deep levels as observed from the C-V depth profile and PL respectively.

scholarly journals Control of Surface Fermi Level Position by Controlling Crystal Defects near the GaAs(001) Surface.

Hyomen Kagaku ◽  
1997 ◽  
Vol 18 (10) ◽  
pp. 633-640
Author(s):  
Yukihiro HIROTA ◽  
Fumihiko MAEDA ◽  
Yoshio WATANABE ◽  
Toshio OGINO
Keyword(s):  
Fermi Level ◽  
Crystal Defects ◽  
Fermi Level Position ◽  
Surface Fermi Level

Surface Fermi Level Position of Diamond Treated with Plasma

1994 ◽  
Vol 339 ◽  
Author(s):  
Takashi Sugino ◽  
Yoshifumi Sakamoto ◽  
Atsuhiko Furukawa ◽  
Junji shirafuji
Keyword(s):  
Fermi Level ◽  
Plasma Treatment ◽  
Valence Band ◽  
Contact Potential Difference ◽  
Band Edge ◽  
Valence Band Edge ◽  
Contact Potential ◽  
Band Bending ◽  
Fermi Level Position ◽  
Surface Fermi Level

ABSTRACTThe surface Fermi level position of undoped epitaxial diamond layers is estimated from contact potential difference between Au reference and diamond measured by Kelvin probe method. The surface Fermi level position of the as-grown layer is located at the energy of 0.75 eV above the valence band edge. O2 plasma treatment leads to an upward shift of the surface Fermi level position to an energy of 1.89 eV from the valence band edge. The surface Fermi level is located at an energy of 0.97 eV above the valence band edge after H2 plasma treatment. Reversible change in the surface Fermi level position is found between O2 and H2plasma treatments. A change in the band bending is observed at the surface of polycrystalline diamond films treated with various ways by X-ray photoclcctron spectroscopy (XPS) analysis. A variation in the current-voltage characteristics of epitaxial and polycrystalline diamonds treated with O2 and H2 plasmas can be qualitatively explained in terms of a change in the band bending due to the shift of the surface Fermi level position.

X-ray Photoemission Determination of the Surface Fermi Level Motion and Pinning on n- and p-GaN during the Formation of Au, Ni, and Ti Metal Contacts

2001 ◽  
Vol 693 ◽  
Author(s):  
Kimberly A. Rickert ◽  
Jong Kyu Kim ◽  
Jong-Lam Lee ◽  
Franz J. Himpsel ◽  
Arthur B. Ellis ◽  
...  
Keyword(s):  
Fermi Level ◽  
Band Gap ◽  
Photoemission Spectroscopy ◽  
Metal Contacts ◽  
X Ray ◽  
Fermi Level Position ◽  
Fermi Edge ◽  
Metal Overlayers ◽  
Surface Fermi Level

AbstractSynchrotron radiation-based x-ray photoemission spectroscopy was used to study the Fermi level position within the band gap for thin metal overlayers of Au, Ni, and Ti on n-GaN and p-GaN. The Fermi level position was determined with the measured Fermi edge of the metal on the sample in order to correct for the presence of non-equilibrium effects. There are two different behaviors observed for the three metals studied. For Au and Ti, the surface Fermi positions on n-GaN and p-GaN are roughly 0.5 eV apart within the band gap. For Ni, the n-GaN and p-GaN have a Schottky barrier that forms at the same place at the gap.

Sign in / Sign up

Export Citation Format

Share Document