scholarly journals Surface Fermi-level position and gap state distribution of InGaP surface grown by metalorganic vapor-phase epitaxy

2002 ◽  
Vol 81 (13) ◽  
pp. 2382-2384 ◽  
Author(s):  
Tamotsu Hashizume
Keyword(s):  
Fermi Level ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
State Distribution ◽  
Fermi Level Position ◽  
Surface Fermi Level ◽  
Gap State

In Situ Surface Passivation of GaAs by Thermal Nitridation using Metalorganic Vapor Phase Epitaxy

1999 ◽  
Vol 573 ◽  
Author(s):  
Jingxi Sun ◽  
F. J. Himpsel ◽  
A. B. Ellis ◽  
T. F. Kuech
Keyword(s):  
Fermi Level ◽  
Vapor Phase ◽  
Surface Passivation ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Thermal Nitridation ◽  
Surface Fermi Level

ABSTRACTAn ammonia-based, in situ passivation of GaAs surfaces conducted within a metalorganic vapor phase epitaxy reactor is present. The shift of the GaAs surface Fermi level, and hence the surface charge density, resulting from this in situ passivation, has been studied using photoreflectance (PR) spectroscopy. Samples consisting of an undoped GaAs layer on highly doped n-GaAs (UN+) and p-GaAs (UP+) structures allow for the exact determination of the surface Fermi level position using PR These structures were grown by MOVPE and in situ thermal nitridation was performed after growth within the MOVPE system without exposure to the air. After nitridation, the surface Fermi level can be shifted by ∼ 0.23 eV towards the conduction band edge for UN+ structures and by ∼ 0.11 eV towards the valence band edge for UP+ structures from the normally mid-gap ‘pinned’ positions.

Acceptor doping of (Al,Ga)As using carbon by metalorganic vapor phase epitaxy

1991 ◽  
Vol 107 (1-4) ◽  
pp. 268-273 ◽  
Author(s):  
M.A. Tischler ◽  
R.M. Potemski ◽  
T.F. Kuech ◽  
F. Cardone ◽  
M.S. Goorsky ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Acceptor Doping

Inverted Al0.25Ga0.75N/GaN ultraviolet p-i-n photodiodes formed on p-GaN template layer grown by metalorganic vapor phase epitaxy

2010 ◽  
Vol 97 (1) ◽  
pp. 013502 ◽  
Author(s):  
Kuo-Hua Chang ◽  
Jinn-Kong Sheu ◽  
Ming-Lun Lee ◽  
Shang-Ju Tu ◽  
Chih-Ciao Yang ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

A phosphorous-rich structure of InP (001) produced by metalorganic vapor-phase epitaxy

1999 ◽  
Vol 75 (5) ◽  
pp. 683-685 ◽  
Author(s):  
L. Li ◽  
B.-K. Han ◽  
D. Law ◽  
C. H. Li ◽  
Q. Fu ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
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