Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

2011 ◽  
Vol 99 (18) ◽  
pp. 182109 ◽  
Author(s):  
M. Boucherit ◽  
A. Soltani ◽  
E. Monroy ◽  
M. Rousseau ◽  
D. Deresmes ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Differential Resistance ◽  
Double Barrier ◽  
Resonant Tunnelling

Negative differential resistance at room temperature from resonant tunnelling in GaInAs/InP double-barrier heterostructures

1987 ◽  
Vol 23 (3) ◽  
pp. 116 ◽  
Author(s):  
M. Razeghi ◽  
A. Tardella ◽  
R.A. Davies ◽  
A.P. Long ◽  
M.J. Kelly ◽  
...  
Keyword(s):  
Negative Differential Resistance ◽  
Room Temperature ◽  
Differential Resistance ◽  
Double Barrier ◽  
Resonant Tunnelling

Novel Approach for Fabrication of Single-Crystalline Insulator/Si/Insulator Nanostructures

2006 ◽  
Vol 928 ◽  
Author(s):  
Andreas Fissel ◽  
Dirk Kuehne ◽  
Eberhard Bugiel ◽  
H. Joerg Osten
Keyword(s):  
Low Temperatures ◽  
Negative Differential Resistance ◽  
Molecular Beam ◽  
Solid Phase ◽  
Differential Resistance ◽  
Solid Phase Epitaxy ◽  
Double Barrier ◽  
Single Crystalline ◽  
Novel Approach ◽  
Sharp Interfaces

ABSTRACTDouble-barrier insulator/Si/insulator nanostructures on Si(111) were prepared using molecular beam epitaxy. Ultrathin single-crystalline Si buried in a single-crystalline insulator matrix with sharp interfaces was obtained by a novel approach based on an epitaxial encapsulated solid-phase epitaxy. As an example, we demonstrate the growth of Si buried in Gd2O3 and the incorporation of epitaxial Si islands into single-crystalline Gd2O3. The I-V characteristic of the obtained nanostructures exhibited negative differential resistance at low temperatures, however, with a strong memory effect.

Sign in / Sign up

Export Citation Format

Share Document