scholarly journals Temperature dependance of the tunneling density of states in sub-micron planar metal/oxide/graphene junctions

2011 ◽  
Vol 99 (17) ◽  
pp. 172108 ◽  
Author(s):  
S. Hacohen-Gourgy ◽  
I. Diamant ◽  
B. Almog ◽  
Y. Dubi ◽  
G. Deutscher
Keyword(s):  
Metal Oxide ◽  
Density Of States ◽  
Temperature Dependance

Impact of carbon concentration on the interface density of states of metal-oxide Si1−x−y GexCy (strained) capacitors

2004 ◽  
Vol 33 (9) ◽  
pp. 1022-1027 ◽  
Author(s):  
A. Cuadras ◽  
B. Garrido ◽  
J. R. Morante ◽  
L. Fonseca ◽  
K. Pressel ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Density Of States ◽  
Carbon Concentration

scholarly journals A Semi-Analytical Extraction Method for Interface and Bulk Density of States in Metal Oxide Thin-Film Transistors

Materials ◽  
2018 ◽  
Vol 11 (3) ◽  
pp. 416
Author(s):  
Weifeng Chen ◽  
Weijing Wu ◽  
Lei Zhou ◽  
Miao Xu ◽  
Lei Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Bulk Density ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Extraction Method ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film

Oxide-free InAs(111)A interface in metal-oxide-semiconductor structure with very low density of states prepared by anodic oxidation

2014 ◽  
Vol 105 (16) ◽  
pp. 161601 ◽  
Author(s):  
N. A. Valisheva ◽  
M. S. Aksenov ◽  
V. A. Golyashov ◽  
T. A. Levtsova ◽  
A. P. Kovchavtsev ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Anodic Oxidation ◽  
Density Of States ◽  
Metal Oxide Semiconductor ◽  
Semiconductor Structure ◽  
Oxide Semiconductor ◽  
Low Density ◽  
Metal Oxide Semiconductor Structure

Density of States-Based Design of Metal Oxide Thin-Film Transistors for High Mobility and Superior Photostability

2012 ◽  
Vol 4 (10) ◽  
pp. 5416-5421 ◽  
Author(s):  
Hyun-Suk Kim ◽  
Joon Seok Park ◽  
Hyun-Kwang Jeong ◽  
Kyoung Seok Son ◽  
Tae Sang Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Density Of States ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Metal Oxide Thin Film

scholarly journals Oxygen Redox Activity in Cathodes – a Common Phenomenon Calling for Density-Based Descriptors

2020 ◽  
Author(s):  
Daniel Koch ◽  
Sergei Manzhos
Keyword(s):  
Transition Metal ◽  
Metal Oxide ◽  
Charge Density ◽  
Density Of States ◽  
Transition Metal Oxide ◽  
High Energy ◽  
High Energy Density ◽  
Redox Activity ◽  
Spherical Approximation ◽  
Redox Active

Lithium-excess transition metal oxide materials are promising cathode candidates for future secondary batteries due to their relatively high energy density, which is commonly related to redox-active oxygen centers. First-principle computations are crucial for the understanding of the underlying redox mechanism in these compounds, with plane-wave density functional theory being the most frequently used setup. An important tool for the assignment of the redox-active species is the projected density of states, although the atomic contributions postulated this way do not strictly correspond to any observable physical quantity. By directly analyzing the computed real-space charge density changes, on the other hand, oxygen redox activity can be found to be substantial in most transition metal oxide compounds, although a projection onto atomic states would suggest otherwise. This can be linked to the shortcomings of the commonly employed spherical approximation for ions in crystalline compounds used to compute the projected density of states, which fails to describe the charge density topology in covalent transition metal oxides and leads to a qualitatively different picture from a charge density-based approach, specifically, the underrepresentation of oxygen contributions and exaggeration of transition metal contributions to the density of states The density based approach, due to the non-spherical nature of Bader domains, is more apt to properly describe oxygen redox contributions. This raises the question how meaningful the descriptors of oxygen redox activity are and how it should be acknowledged for transition metal oxide compounds in general.

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